S1PHB36 SIRECTIFIER | Alldatasheet

Document overview

  • Manufacturer or author: Provided By ALLDATASHEET.COM(FREE DATASHEET DOWNLOAD SITE)
  • PDF pages: 3

Technical content

V 800 1200 1400 1600 1800 VRSM VDSM V 900 1300 1500 1700 1900 Symbol Test Conditions Maximum Ratings Unit TK=85oC, module module per leg A TVJ=45oC t=10ms (50Hz), sine VR=0 t=8.3ms (60Hz), sine TVJ=TVJM t=10ms(50Hz), sine VR=0 t=8.3ms(60Hz), sine 320 350 280 310 AITSM, IFSM TVJ=45oC t=10ms (50Hz), sine VR=0 t=8.3ms (60Hz), sine TVJ=TVJM t=10ms(50Hz), sine VR=0 t=8.3ms(60Hz), sine 500 520 390 400 A2s I2t (di/dt)cr 150 500 A/us (dv/dt)cr TVJ=TVJM; VDR=2/3VDRM RGK= ; method 1 (linear voltage rise) 1000 V/us PGM TVJ=TVJM tp=30us IT=ITAVM tp=500us 5 W PGAVM 0.5 W IdAV IdAVM IFRMS, ITRMS oC TVJ TVJM Tstg -40...+125 125 -40...+125 VISOL 50/60Hz, RMS t=1min IISOL<1mA t=1s 3000 3600 V~ Md Mounting torque (M5) (10-32 UNF) 2-2.5 18-22 Nm lb.in. Weight 50 g TVJ=125oC repetitive, IT=50A f=50Hz, tp=200us VD=2/3VDRM IG=0.3A non repetitive, IT=1/2IdAV diG/dt=0.3A/us VRGM 10 V Dimensions in mm (1mm=0.0394") Single Phase Half Controlled Bridge With Free Wheeling Diode

Symbol Test Conditions Characteristic Values Unit VVT, VF IT, IF=45A; TVJ=25oC 1.45 VTO For power-loss calculations only (TVJ=125oC) 0.85 V rT 13 m VD=6V; TVJ=25oC TVJ=-40oCVGT 1.0 1.2 V VD=6V; TVJ=25oC TVJ=-40oC TVJ=125oC IGT mA VGD TVJ=TVJM; VD=2/3VDRM 0.2 V IGD 5 mA IH TVJ=25oC; VD=6V; RGK= 100 mA tG=30us; IG=0.3A; TVJ=25oC diG/dt=0.3A/us TVJ=-40oC TVJ=125oC 150 200 100 mAIL per thyristor(diode); DC current per moduleRthJC 1.15

0.29 K/W

per thyristor(diode); DC current per moduleRthJK 1.55

0.39 K/W

dS Creeping distance on surface 12.6 mm dA Creepage distance in air 6.3 mm a Maximum allowable acceleration 50 m/s2 IR, ID TVJ=TVJM; VR=VRRM; VD=VDRM TVJ=25oC 0.3 mA TVJ=25oC; VD=1/2VDRM IG=0.3A; diG/dt=0.3A/ustgd 2 us TVJ=125oC; IT=15A; tp=300us; VR=100V typ.tq 150 us uCQr VD=2/3VDRM; dv/dt=20V/us; di/dt=-10A/us 75 TVJ=TVJM; VD=2/3VDRM A F ig. 1 G ate trigger range F ig. 2 G ate controlled delay time t gd 1 10 100 1000 0.1 IG VG mA 1: IG T, T V J = 125°C 2: IG T, T V J = 2 5°C 3: IG T, T V J = -40°C V 4: P G AV = 0.5 W 5: P G M = 1 W 6: P G M = 1 0 WIG D, T V J = 125°C 10 100 1000 100 1000 s tgd TV J = 25°C typ. Limit mA IG Single Phase Half Controlled Bridge With Free Wheeling Diode

0.001 0.01 0.1 1 100 150 200 250 300 23 4 5 6 7 01 101 102 103 0 102 03 04 0 100 120 0 204 06 08 0 100 120 140 0.001 0.01 0.1 1 10 0.0 0.5 1.0 1.5 2.0 I2tIF SM IF A VF t s t ms P tot W IF(AV )M A Tamb t s ZthJ H K /W A s 0 20 406 08 0 100 120 Id(AV)M T H A V A °C °C VR = 0 V F ig. 3 F orward current vers us voltage drop per diode F ig. 4 S urge overload current F ig. 5 I2t vers us time per diode F ig. 6 P ower dis s ipation vers us direct output current and ambient temperature F ig. 7 Max. forward current vers us heats ink temperature F ig. 8 T rans ient thermal impedance junction to heats ink T V J = 125 °C T V J = 45 °C typ. T V J = 125 °C T V J = 25 °C max. T V J = 125 °C T V J = 45 °C C ons tants for ZthJ H calculation: iR thi (K /W) ti (s ) 1 0.005 0.008 2 0.2 0.05 3 0.875 0.06 4 0.47 0.25 50Hz, 80% V R R M R thHA :

0.5 K /W

1.0 K /W

1.5 K /W

2.0 K /W

3.0 K /W

4.0 K /W

6.0 K /W

Single Phase Half Controlled Bridge With Free Wheeling Diode