S1MF

S1AF GXELECTRONICS | Alldatasheet

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Ratings at 25 ambient temperature unless otherwise specified. Single phase half-wave 60 Hz, resistive or inductive load, for capacitive load current derate by 20 %. Maximum DC Blocking Voltage Peak Forward Surge Current 8.3 ms Single Half Sine Wave Superimposed on Rated Load (JEDEC Method) Maximum Instantaneous Forward Voltage at 1 A Parameter Maximum Repetitive Peak Reverse Voltage Maximum RMS voltage Operating and Storage Temperature Range Maximum Average Forward Rectified Current at Ta = 65 °C Maximum DC Reverse Current Ta = 25 °C at Rated DC Blocking Voltage Ta =125 °C 1）Typical Junction Capacitance VRRM VRMS VDC IF(AV) IFSM VF IR 50 100 200 400 600 800 1000 V 35 70 140 280 420 560 700 V 50 100 200 400 600 800 1000 V 1.1 180 -55 ~ +150 A A V μA pF Maximum Ratings and Electrical characteristics S1AF S1BF S1DF S1GF S1JF S1KF S1MF Typical Thermal Resistance RθJA Measured at 1 MHz and applied reverse voltage of 4 V D.C °C/W Cj T , Tj stg Symbols Units

FEATURES

For surface mounted applications Low profile package Glass Passivated Chip Juntion Easy to pick and place Lead free in comply with EU RoHS 2011/65/EU directives MECHANICAL DATA Case: SMAF Terminals: Solderable per MIL-STD-750, Method 2026 pprox. Weight: 27mg 0.00086oz

• A 星合电子 XINGHE ELECTRONICS S u r f a c e M o u n t G e n e r a l P u r p o s e S i l i c o n R e c t i f i e r s R e v e r s e Vo l t a g e - 5 0 t o 1 0 0 0 V F o r w a r d C u r r e n t - 1 A GAOMI XINGHE ELECTRONICS CO.,LTD. WWW.SDDZG.COM 0.179(4.40) 0.199(5.05) 0.150(3.80) 0.035(0.90) Dimensions in inches and (millimeters) SMAF Cathode Band Top View 0.128(3.25) 0.110(2.80) 0.094(2.40) 0.051(1.30) 0.059(1.50) 0.055(1.40) 0.012(0.30) 0.006(0.15) 0.047(1.20) 0.028(0.70) XH

0.1 Fig.3 Typical Forward Characteristic Instaneous Forward Current (A) Instaneous Forward Voltage (V) 0.7 1.0 T =25 J T =150 J T =100 J 0.2 0.5 Fig.2 Typical Instaneous Reverse Characteristics Instaneous Current ( A)Reverse μ 200 400 600 8000 0.01 0.1 1.0 Instaneous Reverse Voltage (V) 100 T =25J °C T =50J °C T =75J °C T =100J °C T =125J °C T =150J °C Fig.4 Typical Junction Capacitance Junction Capacitance ( pF) Reverse Voltage (V) 5 10 20 25 30 35 40 0.2 0.4 0.6 0.8 1.0 1.2 0.0 25 50 75 100 125 150 175 Fig.1 Forward Current Derating Curve Average Forward Current (A) Ambient Temperature (°C) Single phase half-wave 60 Hz resistive or inductive load S1AF THRU S1MF 星合电子 XINGHE ELECTRONICS S u r f a c e M o u n t G e n e r a l P u r p o s e S i l i c o n R e c t i f i e r s R e v e r s e Vo l t a g e - 5 0 t o 1 0 0 0 V F o r w a r d C u r r e n t - 1 A GAOMI XINGHE ELECTRONICS CO.,LTD. WWW.SDDZG.COM