S1A_10 TSC | Alldatasheet
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% SEMICONDUCTOR S1A - S1 M 1.0 AMP. Surface Mount Rectifiers (Pe) COMPLIANCE coo 5M DO-214A\\ eat TF T 4111249 \\S— 1 ae) Features L “anes) _ + — UL Recognized File # E-326243 ~ For surface mounted application + Glass passivated junction chip. ce + — Low forward voltage drop sua — High current capability 1 J orasy ~ Easy pick and place [ Faexan | 1°" ~ High surge current capability —— “acroy + Plastic material used carries Underwriters tt0.9) 21059 Laboratory Classification 94V-0 TEASE) + High temperature soldering: 260°C / 10 seconds at terminals Di . inch d llimete Qualified as per AEC-@101 mensions in inches and (millimeters) + Green compound with suffix “G" on packing Marking Diagram code & prefix “G” on datecode. Mechanical Data S1X = Specific Device Code % Case: Molded plastic [| 2h |] S = Steen compound + Terminals: Pure tin plated, lead free Me Work Month solderable per J-STD-002B and JESD22-B102D. + Polarity: Indicated by cathode band + Packaging: 12mm tape per EIA STD RS-481 + Weight: 0.064 grams Maximum Ratings and Electrical Characteristics Rating at 25°C ambient temperature unless otherwise specified. Single phase, half wave, 60 Hz, resistive or inductive load For capacitive load, derate current by 20% Type Number Symbol | $1A | $1B | $1D | 1G | S1J [Sik | S1M [Units] [Maximum RUS Votage | Vaws | 35 | 70 | 140 | 280 | 420 | 560 | 700 | V_| Heximum DC Block Varage [voc [80 | 100 [200 | 400 [600 [00 [i000 —v_| Maximum Average Forward Rectified A Current @T. =110°C Trew Peak Forward Surge Current, 8.3 ms Single Half Sine-wave Superimposed on Rated IFsm 30 A Load (JEDEC method Maximum Instantaneous Forward Voltage Maximum DC Reverse Current @ Ta =25°C) 1.0 uA Jat Rated DC Blocking Voltage (Note 1 )@Tx=125°C 50 uA Typical Reverse Recovery Time (Note 4) INon-Repetitive Peak Reverse Avalanche Engergy at 25°C, Ias=1A, L=10mH Ersm 5 md Typical Thermal Resistance (Note 3) Rout 27 30 “cI Rea 75 85 -55 to +175 =55 to +175 Notes: 1. Pulse Test with PW=300 usec, 1% Duty Cycle 2. Measured at 1 MHz and Applied V,=4.0 Volts 4. Reverse Recovery Test Conditions: |,=0.5A, In=1.0A, Iq=0.25A Version: H10
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FIG.6- REVERSE RECOVERY TIME CHARACTERISTIC AND TEST CIRCUIT DIAGRAM NONNOUCTIVE — NONINOUCTIVE ke . “$e e 1 ie AE {ic wa ET WBomgp sore Ceo — ow CRC] Version: H10