S1AW AITSEMI | Alldatasheet
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AiT Semiconductor Inc. www.ait-ic.com S1AW~S1MW RECTIFIER DIODE REVERSE VOL TAGE 50 TO 1000V FORWARD CURRENT 1A REV1.0 - MAY 2020 RELEASED - - 1 - DESCRIPTION FEATURES The S1AW~S1MW are available in SOD-123FL package Available in SOD-123FL package ORDERING INFORMATION PIN DESCRIPTION Package Type Part Number SOD-123FL S1AW S1BW S1DW S1GW S1JW S1KW S1MW Note SPQ: 3,000pcs/Reel AiT provides all RoHS Compliant Products
AiT Semiconductor Inc. www.ait-ic.com S1AW~S1MW RECTIFIER DIODE REVERSE VOL TAGE 50 TO 1000V FORWARD CURRENT 1A REV1.0 - MAY 2020 RELEASED - - 2 - MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS Ratings at 25℃ ambient temperature unless otherwise specified. Single phase half-wave 60 Hz, resistive or inductive load, for capacitive load current derate by 20 %. Parameter Symbol S1AW S1BW S1DW S1GW S1JW S1KW S1MW Unit Maximum Repetitive Peak Reverse Voltage VRRM 50 100 200 400 600 800 1000 V Maximum RMS Voltage VRMS 35 70 140 280 420 560 700 V Maximum DC Blocking Voltage VDC 50 100 200 400 600 800 1000 V Maximum Average Forward Rectified Current at TA = 65°C IF(AV) 1 A Peak Forward Surge Current 8.3ms Single Half Sine-Wave Superimposed on Rated Load (JEDEC Method) IFSM 25 A Maximum Instantaneous Forward Voltage at 1A VF 1.1 V Maximum DC Reverse Current at Rated DC Blocking Voltage TA=25℃ TA=125℃ IR uA Typical Junction CapacitanceNOTE 1 CJ 4 pF Typical Thermal ResistanceNOTE 2 RθJA 180 °C/W Operating and Storage Temperature Range TJ, TSTG -55 ~150 °C Stresses above may cause permanent damage to the device. These are stress rating s only and functional operation of the device at these or any other conditions beyond those indicated in the Electrical Characteristics are not implied. Exposure to absolute maximum rating conditions for extended periods may affect device reliability. NOTE1: Measured at 1 MHz and applied reverse voltage of 4 V D.C
AiT Semiconductor Inc. www.ait-ic.com S1AW~S1MW RECTIFIER DIODE REVERSE VOL TAGE 50 TO 1000V FORWARD CURRENT 1A REV1.0 - MAY 2020 RELEASED - - 3 - TYPICAL CHARACTERISTICS TA = 25°C, unless otherwise noted Figure. 1 Forward Current Derating Curve Figure. 2 Typical Instantaneous Reverse Characteristics Figure. 3 Typical Forward Characteristics Figure. 4 Typical Junction Capacitance
AiT Semiconductor Inc. www.ait-ic.com S1AW~S1MW RECTIFIER DIODE REVERSE VOL TAGE 50 TO 1000V FORWARD CURRENT 1A REV1.0 - MAY 2020 RELEASED - - 4 -
PACKAGE INFORMATION
Dimension in SOD-123FL (Unit: mm) Plastic surface mounted package; 2 leads UNIT A C D E e g HE ∠ mm mil max 43 7.9 114 75 43 35 150 min 35 4.7 102 67 31 28 138
AiT Semiconductor Inc. www.ait-ic.com S1AW~S1MW RECTIFIER DIODE REVERSE VOL TAGE 50 TO 1000V FORWARD CURRENT 1A REV1.0 - MAY 2020 RELEASED - - 5 - IMPORTANT NOTICE AiT Semiconductor Inc. (AiT) reserves the right to make changes to any its product, s pecifications, to discontinue any integrated circuit product or service without notice, and advises its customers to obtain the latest version of relevant information to verify, before placing orders, that the information being relied on is current. AiT Semiconductor Inc.'s integrated circuit products are not designed, intended, authorized, or warranted to be suitable for use in life support applications, devices or systems or other critical applications. Use of AiT products in such applications is understood to be fully at the risk of the customer. As used herein may involve potential risks of death, personal injury, or s ervere property, or environmental damage. In order to minimize risks associated with the customer's applications, the customer should provide adequate design and operating safeguards. AiT Semiconductor Inc . assumes to no liability to customer product desi gn or application support. AiT warrants the performance of its products of the specifications applicable at the time of sale.