S1D-K TMT | Alldatasheet
Document overview
- Manufacturer or author: Provided By ALLDATASHEET.COM(FREE DATASHEET DOWNLOAD SITE)
- PDF pages: 4
Technical content
- Glass passivated chip junction - Ideal for automated placement - Low forward voltage drop - High surge current capability - Halogen-free according to IEC 61249-2-21 definition Molding compound, UL flammability classification rating 94V-0 Packing code with suffix "G" means green compound (halogen-free) Terminal: Matte tin plated leads, solderable per JESD22-B102 Meet JESD 201 class 1A whisker test S1D S1G S1J S1K S1M V RRM 200 400 600 800 1000 V VRMS 140 280 420 560 700 V VDC 200 400 600 800 1000 V IF(AV) A trr μs CJ pF TJ °C TSTG °C Version: B1603 Case: DO-214AC (SMA) MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS (TA=25°C unless otherwise noted) PARAMETER Polarity: Indicated by cathode band S1G A Maximum RMS voltage Weight: 0.06 g (approximately) Maximum average forward rectified current 1 S1D-K - S1M-K 1A, 200V - 1000V Surface Mount Rectifiers
FEATURES
Moisture sensitivity level: level 1, per J-STD-020 S1K - Compliant to RoHS Directive 2011/65/EU and in accordance to WEEE 2002/96/EC MECHANICAL DATA S1M UNIT DO-214AC (SMA) Taiwan Semiconductor 1.1 SYMBOL S1D Maximum instantaneous forward voltage (Note 1) @ 1 A VF TJ=25°C S1J Peak forward surge current, 8.3 ms single half sine-wave superimposed on rated load IFSM °C/W V IR μAMaximum reverse current @ rated VR TJ=125°C Maximum repetitive peak reverse voltage Note 3: Measured at 1 MHz and Applied Reverse Voltage of 4.0V D.C. Note 1: Pulse test with PW=300μs, 1% duty cycle Storage temperature range - 55 to +175 Marking code - 55 to +175 Maximum DC blocking voltage Typical reverse recovery time (Note 2) Operating junction temperature range Note 2: Reverse Recovery Test Conditions: IF=0.5A, IR=1.0A, IRR=0.25A Typical thermal resistance RθJL RθJA Typical junction capacitance (Note 3) 1.5
PART NO. Note 2: Whole series with green compound Version: B1603 RATINGS AND CHARACTERISTICS CURVES (TA=25°C unless otherwise noted) S1D-K - S1M-K Taiwan Semiconductor
ORDERING INFORMATION
PART NO. PACKING CODE SUFFIX PACKING G SMA 1,800 / 7" Plastic reel S1M-K R3G G SMA 7,500 / 13" Paper reel Green compound PACKING CODE PART NO. S1M-K Note 1: "x" defines voltage from 200V (S1D-K) to 1000V (S1M-K) EXAMPLE DESCRIPTIONPACKING CODE S1x-K (Note 1, 2) 0.2 0.4 0.6 0.8 1.2 0 2 55 07 5 1 0 0 1 2 5 1 5 0 1 7 5 AVERAGE FORWARD CURRENT (A) LEAD TEMPERATURE (oC) FIG.1 FORWARD CURRENT DERATING CURVE RESISTIVE OR INDUCTIVE LOAD 100 1 10 100 PEAK FORWARD SURGE URRENT (A) NUMBER OF CYCLES AT 60 Hz FIG. 3 MAXIMUM NON-REPETITIVE FORWARD SURGE CURRENT 8.3ms Single Half Sine Wave 0.001 0.01 0.1 100 0 20 40 60 80 100 120 140 INSTANTANEOUS REVERSE CURRENT (μA) PERCENT OF RATED PEAK REVERSE VOLTAGE (%) FIG. 2 TYPICAL REVERSE CHARACTERISTICS TJ=125°C TJ=75°C TJ=25°C 0.1 100 INSTANTANEOUS FORWARD CURRENT (A) FORWARD VOLTAGE (V) FIG. 4 TYPICAL FORWARD CHARACTERISTICS Pulse Width=300μs 1% Duty Cycle
A 1.27 1.58 0.050 0.062 B 4.06 4.60 0.160 0.181 C 2.29 2.83 0.090 0.111 D 1.99 2.50 0.078 0.098 E 0.90 1.41 0.035 0.056 F 4.95 5.33 0.195 0.210 G 0.05 0.20 0.002 0.008 H 0.15 0.31 0.006 0.012 P/N = Marking code G = Green Compound YW = Date Code F = Factory Code Version: B1603 S1D-K - S1M-K Taiwan Semiconductor PACKAGE OUTLINE DIMENSIONS DIM. Unit (mm) Unit (inch) DO-214AC (SMA) SUGGESTED PAD LAYOUT Symbol Unit (mm) Unit (inch) A 1.68 0.066 B 1.52 0.060 C 3.93 0.155 MARKING DIAGRAM D 2.41 0.095 E 5.45 0.215 100 0.01 0.1 1 10 100 CAPACITANCE (pF) REVERSE VOLTAGE (V) FIG. 5 TYPICAL JUNCTION CAPACITANCE f=1.0MHz Vsig=50mVp-p
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