S1A FS | Alldatasheet
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REVERSE VOLTGE 50V~1000V FORWARD CURRENT 1.0AMP Surface Mount Rectifiers MECHANICAL DA TA FEA TURES SEMICONDUCTOR TECH NIC AL DATA S1A ~ S1M 2012. 03. 15 1/2Revision No : 0 Peak Forward Surge Current,8.3 ms Single Half Sine- wave Superimposed on Rated Load (JEDEC method) IFSM 30 A Maximum Instantaneous Forward Voltage (Note@1.0 A VF 1.1 V Maximum DC Reverse Crrent @ TA=25℃ At Rated DC Blocking Voltage @ TA=125℃ IR 5.0 50 uA Typical Thermal Resistance (Note ) Rθ JL R JA 85 ℃/W Operating J unction Temperature Range T J -55 to+150 ℃ Storage Temperature Ranage TSTG -55 to+150 Rating at 25℃ ambient temperature unless otherwise specified. Single phase, half wave,60Hz,resistive or inductive load. For capacitive load,derate current by 20% Type Number S1A S1B S 1D S1G S 1J S1K S 1M UNITS Maximum Repetitive Peak Reverse Voltage VRRM 50 100 200 400 600 800 1000 V Maximum RMS Voltage VRMS 35 70 140 280 420 560 700 V Maximum DC Blocking Voltage VDC 50 100 200 400 600 800 1000 V Maximum Average Forward Rectified Current @TL=110℃ IF(AV) 1.0 A Maximum Ratings And Electrical Characteristics *For surface mounted application Metal to silicon rectifier,majority carrier conduction Low forward voltage drop Easy pick and place High surge current capability Plastic materal used carriers Underwr Laboratory Classification 94V- 0 Epitaxial construction High temperature soldering: 260" /10 seconds at terminals Case: molded plastic Terminals:Solder plated Polarity:Indicated by cathode band Packaging: 12mm tape EIA STD RS-481 Weight:0.064gram DO-214AC(SMA) Dimensions in inches and (millimeters) .071(1.8) .055(1.4) .111(2.83) .102(2.58) .056(1.41) .035(.90) .203(5.15) .195(4.95) .103(2.61) .078(1.99) 5° 5° .008(.20) .004(.10) .161(4.10) .156(3.95) θ
Ratings and Characteristic Curves ( Ta = 25°C unless otherwise noted ) S1A ~ S1M 2012. 03. 15 2/2Revision No : 0