S1A GXELECTRONICS | Alldatasheet
Document overview
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Technical content
- Operating Temperature:-65℃ to+150℃
- Storage Temperature:-65℃ to+150℃
- Maximum Thermal Resistance: 30℃/W Junction to Terminal Electrical Characteristics@25℃ Unless Otherwise Specified Item Number Device Marking Maximum Recurrent Peak Reverse Voltage Maximum RMS Voltage Maximum DC Blocking Voltage S1A S1A 50V 35V 50V S1B S1B 100V 70V 100V S1D S1D 200V 140V 200V S1G S1G 400V 280V 400V S1J S1J 600V 420V 600V S1K S1K 800V 560V 800V S1M S1M 1000V 700V 1000V Average Rectified Output Current I O 1.0A T T =100℃ Peak Forward Surge Current I FSM 30A 8.3ms,half Sine-wave Forward Voltage D r o p V FM 1.1V I F =1.0A Peak Reverse Current at Rated DC Blocking Voltage I RM 5.0uA 100uA T A =25℃ T A =125℃ Typical Junction Capacitance C T 10pF DO-214AC(SMA) (High Profile) 1.0Amp Surface Mount Glass Passivated Rectifier 50 to 1000 Volts
- Glass Passivated Die Construction
- Low Forward Voltage Drop and High Current Capability
- Surge Overload Rating to 30A Peak
- Ideally Suited for Automated Assembly
- Available in Lead Free Version S1A THRU S1M Notes： 1. Measured at 1.0MHz and applied reverse voltage of 4.0 V DC. 2. Thermal Resistance Junction to Terminal ,unit mounted on PC board with 5.0mm ( 0 . 0 1 3 m m t h i c k ) c o p p e r pads as heat sink. 星合电子 XINGHE ELECTRONICS GAOMI XINGHE ELECTRONICSCO.,LTD. WWW.SDDZG.COM TEL:0536-2210359