S1F77310M0A EPSON | Alldatasheet

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„ OVERVIEW The S1F77310 series is the bus switch suitable fo r USB applications. The adopted CMOS process technology characterizes the S1F77310 series by low power consumption. The compact PLP-8 adopted for the package enables the S1F77310 series to be mounted on high-density assemblies. The built-in level shift circuit eliminates the need of external level shift circuitry for the input to this IC. „ FEATURES x Input voltage range : 3.0V to 3.6V x Low-current consumption : 14 µA (MAX) x Stand-by current : 1 µA (MAX) x Bus switch ON resistance : 5.3 Ω (typ) x Bus switch OFF capacitance : 1.7pF (typ) „ APPLICATION x Mobile communication equipment (mobile phones, cordless phones, and wireless communication devices) x Mobile AV equipment x Home appliances x Cameras, and video equipment x Portable game devices x Battery equipment „ PACKAGE x PLP-8 (1.60 mm x 1.60 mm)

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„ APPLICATION CIRCUIT EXAMPLE Fig.1 Application Circuit Example „ PIN ASSIGNMENT (Top view) Fig.2 Pin Assignment Fig. 3 Bus switch symbol * Central land area in this IC is not used. Do not mount any pin. HS USB Controller Base Band Processor or FS USB Controller S1F77310 USB Connector VCC XOE HSD+ HSD- XOE Control 3 4 5 7 8

„ PIN DESCRIPTION Pin No. Pin Name Pin Description

1 XOE Bus switch enable input pin

2 HSD+ Data port (+)

3 D+ Data port (+)

4 GND GND pin

5 D- Data port (-)

6 HSD- Data port (-)

7 (NC) NC pin

8 V CC Power supply pin

„ TRUTH TABLE XOE Bus Switch status HIGH Disconnected LOW HSD+ =D+, HSD- =D-

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„ BLOCK DIAGRAM Fig.4 Block diagram XOE Gate Control Level Shifter GND VCC HSD- HSD+ S1F77310

„ ELECTRICAL CHARACTERISTICS „ ABSOLUTE MAXIMUM RATINGS Item Symbol Min. Max. Unit Supply voltage V CC -0.3 4.6 V Input pin voltage XOE V IN -0.3 7.0 V Switch input voltage HSD+,HSD-,D+,D- V SW -0.3 7.0 V Storage temperature T STG -65 150 °C „ RECOMMENDED OPERATING CONDITIONS Item Symbol Min. Max. Unit Supply voltage V CC 3.0 3.6 V Input pin voltage XOE V IN 0.0 5.5 V Switch input voltage HSD+,HSD-,D+,D- V SW 0.0 5.5 V Operating temperature T a -40 85 °C „ DC ELECTRICAL CHARACTERISTICS (Without protrusion: Ta= -40 °C to 85 °C) Item Symbol Conditions V CC[V] Min. Typ. Max. Unit Clamp diode voltage V IK I L=18mA 3.0 -1.2 V High Level Input voltage V IH 3.0 to 3.6 1.2 V Low Level Input voltage V IL 3.0 to 3.6 0.4 V Input Leakage current I IN 0V ≤VIN≤VCC 3.6 -1.0 1.0 µA OFF Stage Leakage current I OZ 0V ≤VSW≤VCC 3.6 -1.0 1.0 µA Power off Leakage current (D+, D-) IOFF 0V ≤VSW≤VCC,VCC=0V 0.0 -2.0 2.0 µA Switch ON resistance R ON V SW=0.4V,ION, = -8mA 3.0 5.3 8.0 Ω ∆ON resistance ∆RON V SW=0.4V,ION, = -8mA 3.0 0.35 Ω ON resistance flatness R ON(Flat) 0V ≤VSW≤1V,ION= -8mA 3.0 2 Ω Quiesent current I CC V IN=3.6V 3.6 1.0 µA Current consumption I CCT V IN=0V,VSW=2.6V 3.6 14.0 µA * Describe the value based on the USB full speed standard.

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„ AC ELECTRICAL CHARACTERISTICS (Without protrusion: Ta= -40 °C to 85 °C) Item Symbol Conditions V CC[V] Min. Typ. Max. Unit Turn ON Time tON RL=50Ω, CL=5pF 3.0 to 3.6 5 20 µs Turn OFF Time tOFF RL=50Ω, CL=5pF 3.0 to 3.6 21 40 ns Propagation Delay tPD RL=50Ω, CL=5pF 3.3 0.25 ns OFF Isolation O IRR R L=50Ω, CL=0pF, f=240MHz 3.0 to 3.6 -35 dB Crosstalk X talk R L=50Ω, f=240MHz 3.0 to 3.6 -40 dB -3dB Bandwidth BW R L=50Ω, CL=0pF, f=240MHz 3.0 to 3.6 1000 MHz Channel to Channel Skew tSK(O) RL=50Ω, CL=5pF 3.0 to 3.6 50 ps Skew of Opposite Transitions of the Same Output tSK(P) RL=50Ω, CL=5pF 3.0 to 3.6 20 ps Total Jitter tj RL=50Ω, CL=5pF, tR=tF=500ps at 480Mbps 3.0 to 3.6 200 ps „ CAPACITANCE (Without protrusion: Ta= -40 °C to 85 °C) Item Symbol Conditions VCC[V] Min. Typ. Max. Unit Control input pin capacitance CIN V CC=0V, f=1MHz 0.0 7.0 pF Bus switch ON capacitance CON V IN=0V,f=1MHz 3.3 3.7 pF Bus switch OFF capacitance COFF V CC=0V,f=1MHz 0.0 1.7 pF

SEMICONDUCTOR OPERATIONS DIVISION SEIKO EPSON CORPORATION IC Sales Department IC International Sales Group 421-8 Hino, Hino-shi, Tokyo 191-8501, JAPAN Phone: 042-587-5814 FAX: 042-587-5117 NOTICE: No part of this material may be reproduced or duplicated in any fo rm or by any means without the written permission of Seiko Ep son. Seiko Epson reserves the right to make c hanges to this material without notice. Se iko Epson does not assume any liability of a ny kind arising out of any inaccuracies contained in this material or due to its application or use in any product or circuit and, furt her, there is no representation that this material is app licable to products requiring high level reliab ility, such as, medical products. Moreo ver, no license to any intellectual property rights is granted by implication or otherwise, and there is no representation or warranty that any thing made in accordance with this material will be free from any patent or copy right infringement of a third party. This material or portio ns thereof may contain technology or the subject relating to strategic products under the control of the Foreign Exchange and Foreign Trade La w of Japan and may require an export license from the Ministry of Economy, Trade and Industry or other approval from another government agency. ©Seiko Epson Corporation 2008, All rights reserved. http://www.epson.jp/device/semicon_e/ Q EPSON Electronic devices Website Document code: 411494400 First issue August, 2008 in J apan