S1A DSK | Alldatasheet
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Technical content
1.5± 0.1 4.5± 0.1 2.6± 0.15 2.1± 0.2 1.3± 0.2 0.203MAX 0.2± 0.05 5.1± 0.2
FEATURES
MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS Ratings at 25 o C ambient temperature unless otherwise specified S1D S1G S1J S1K S1M Maximum recurrent peak reverse voltage V RRM 200 400 600 800 1000 V Max imum RMS v oltage V RMS 140 280 420 560 700 V Maximum DC blocking voltage V DC 200 400 600 800 1000 V Maximum average forword rectified current V @TL=110 I F(AV) A Peak forward surge current @ T L = 110°C V 8.3ms single half-sine-wave superimposed V on rated load (JEDEC Method) I FSM A Maximum instantaneous forward voltage at 1.0A V F V Maximum DC reverse current @T A =25 o C at rated DC blockjing voltage @T A =125 o C Typical junction capacitance(NOTE 1) C J pF Operating junction and storage temperature range T J T STG o C Plastic package has underwriters laboratory 111 flammability classifications UNITS 40.0 30.0 50 100 35 70 50 100 50.0 1.1 1.0 I R 5.0 For surface mounted applications Low profile package S1A Polarity: Color band denotes cathode end Weight: 0.002 ounces, 0.064 gram Terminals:Solder Plated, solderable per MIL-STD- 1111750, Method 2026 High temperature soldering: 1 250 o C/10 seconds at terminals S1A --- S1M NOTE: 1.Measured at 1.0MHz and applied reverse voltage of 4.0volts REVERSE VOLTAGE: 50 - 1000 V CURRENT: 1.0 A Built-in strain relief,ideal for automated placement Case:JEDEC DO-214AC,molded plastic over 1111passivated chip SURFACE MOUNT RECTIFIERS DO - 214AC(SMA) Typical thermal resitance (NOTE 2) o C/W S1B Dimensions in millimeters JAR 50 Diode Semiconductor Korea www.diode.kr
0.1 0.01 0.1 1 10010 S1(K,M) S1(A-J) UNITS MOUNTED on INCHES(0.013mm) THICK COPPERLAND AREAS Puise Width=300 S 1%DUTY CYCLE 0.4 0.01 0.1 100 T J =25 C O T J =125 C O T J =75 C O T J =25 C O 100 0.1 0.01 0.001 800 20 40 60 100 111 01 0 0 T L =110 C 8.3ms Single Half Sine Wave (JEDEC Method) 100 O S1(A-J) S1(K,M) Resistive or inductive Load 0.2X0.2(5.0X5.0mm) THICK COPPERPAND AREAS 0.2 0.4 0.6 0.8 1.2 1.0 0 25 50 75 100 125 150 175 AVERAGE FORWARD CURRENT,AMPERES PEAK FORWARD SURGE CURRENT,AMPERES INSTANTANEOUS FORWARD CURRENT,AMPERES INSTANTANEOUS REVERSE CURRENT MICROAMPERES S1A-S1M FIG.3 -- TYPICAL FORWARD CHARACTERISTICS FIG.4 -- TYPICAL REVERSE CHARACTERISTICS FIG.5-TYPICAL JUNCTION CAPACITANCE FIG.1 -- FORWARD DERATING CURVE FIG.2 PEAK FORWARD SURGE CURRENT NUMBER OF CYCLES AT 60Hz INSTANTANEOUS FORWARD VOLTAGE,VOLTS PERCENT OF RATED PEAK REVERSE VOLTAGE, FIG.6-TRANSIENT THERMAL IMPEDANCE REVERSE VOLTAGE,VOLTS PULSE DURATON,SEC AMBIENT TEMPERATURE JUNCTION CAPACITANCE pF TRANSIENT THERMAL IMPEDANCE, .4 1.0 2 100 41 0 20 4 0 10 0 f=1MHz T J =25 www.diode.kr Diode Semiconductor Korea