S1AF SEMIPOWER | Alldatasheet
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Technical content
Surface Mount General Purpose Silicon Rectifiers Reverse Voltage - 50 to 1000 V Forward Current - 1 A Ratings at 25 ambient temperature unless otherwise specified. Single phase half-wave 60 Hz, resistive or inductive load, for capacitive load current derate by 20 %. Maximum DC Blocking Voltage Peak Forward Surge Current 8.3 ms Single Half Sine Wave Superimposed on Rated Load Maximum Instantaneous Forward Voltage at 1 A Parameter Maximum Repetitive Peak Reverse Voltage Maximum RMS voltage Operating and Storage Temperature Range Maximum DC Reverse Current = 25 °C at Rated DC Blocking Voltage =125 °C Ta Ta （1）Typical Junction Capacitance （2） VRRM VRMS VDC IF(AV) IFSM VF IR 50 100 200 400 600 800 1000 V 35 70 140 280 420 560 700 V 50 100 200 400 600 800 1000 V 1.1 -55 ~ +150 A A V μA pF Maximum Ratings and Electrical characteristics Typical Thermal Resistance RθJA RθJC °C/W Cj T , Tj stg Symbols Units
FEATURES
For surface mounted applications Low profile package Glass Passivated Chip Junction Easy to pick and place Lead free in comply with EU RoHS 2011/65/EU directives MECHANICAL DATA Case: SMAF Terminals: Solderable per MIL-STD-750, Method 2026 pprox. Weight: 27mg / 0.00095oz
- A PINNING PIN
DESCRIPTION
Marking Code： S1A-S1M Simplified outline SMAF and symbol 1 2 S1AF S1BF S1DF S1GF S1JF S1KF S1MF Measured at 1 MHz and applied reverse voltage of 4 V D.C （2） （1） Maximum Average Forward Rectified Current at T = 125 °Cc Copyright@ SEMIPOWER Electronic Technology Co., Ltd. All rights reserved. 2016 Rev 1.0
0.1 Fig.3 Typical Forward Characteristic Instaneous Forward Current (A) Instaneous Forward Voltage (V) 0.7 1.0 T =25 J T =125 J T =100 J 0.2 0.5 Fig.2 Typical Instaneous Reverse Characteristics Instaneous Current ( A)Reverse μ 200 400 600 8000 0.01 0.1 1.0 Instaneous Reverse Voltage (V) 100 T =25J °C T =75J °C T =100J °C T =125J °C T =150J °C 0.2 0.4 0.6 0.8 1.0 1.2 0.0 25 50 75 100 125 150 175 Fig.1 Forward Current Derating Curve Average Forward Current (A) Case Temperature (°C) Single phase half-wave 60 Hz resistive or inductive load Fig.4 Typical Junction Capacitance Junction Capacitance ( pF) 1.0 10 1000.1 100 Reverse Voltage (V) T =25J °C 10 100 Fig.5 Maximum Non-Repetitive Peak Forward Surage Current Peak A)Forward Surage Current ( Number of Cycles 8.3 ms Single Half Sine Wave (JEDEC Method) S1AF THRU S1MF Copyright@ SEMIPOWER Electronic Technology Co., Ltd. All rights reserved. 2016 Rev 1.0
Plastic surface mounted package; 2 leads SMAF A C ∠ALL ROUND V AM e UNIT mm max min mil max min 7.9 4.7 146 130 106 193 173 A C D E HE ∠ 1.6 1.3 e Bottom View HE g Top View 1.2 0.8 g g ∠ALL ROUND E D A E pad pad The recommended mounting pad size 2.2 (86) 1.6 (63) 1.8 (71) 1.6 (63) Unit ：mm (mil) S1AF THRU S1MF Copyright@ SEMIPOWER Electronic Technology Co., Ltd. All rights reserved. 2016 Rev 1.0