S1AF FS | Alldatasheet
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S1AF ~ S1MFSEMICONDUCTOR TEC HNICAL DATA 2015. 09. 06 1/2Revision No : 0 Reverse Voltage - 50 to 1000 V , Forward Current - 1 A MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS Ratings at 25°C ambient temperature unless otherwise speci/f_ied. Single phase half-wave 60 Hz, resistive or inductive load, for capacitive load current derate by 20 %. Maximum DC Blocking Vo ltage Peak Forward Surge Current 8.3 ms Single Half Sine W ave Superimposed on Rated Load (JEDEC Method) Maximum Instantaneous Forward Vo ltage at 1 A m Maximum Repetitive Peak Reverse Vo ltage Maximum RMS voltage Operating and Storage T emperature Range Maximum A verage Forward Rectified Current at Ta = 65°C Maximum DC Reverse Current Ta = 25°C at Rated DC Blocking Voltage Ta =125°C 1）Typical Junction Capacitance VRRM VRMS VDC IF(AV) IFSM VF IR 50 100 200 400 600 800 1000 V 35 70 140 280 420 560 700 V 50 100 200 400 600 800 1000 V 1.1 180 -55 ~ +150 A A V μA pF F S1BF F S1KF Typical Thermal Resistance RθJA 1） Measured at 1 MHz and applied reverse voltage of 4 V D.C °C/W Cj T , Tj stg y U
FEATURES
For surface mounted applications MECHANICAL D ATA Case: SMAF Terminals: Solderable per MIL-STD-750, Method 2026 Approx. Weight: 27mg 0.00086oz Low pro/f_ile package Glass Passivated Chip Juntion Easy to pick and place Lead free in comply with EU RoHS 2011/65/EU directives
- 09. 06 2/2Revision No : 0 S1AF ~ S1MF 0.1 g 3 y c Instaneous Forward Current (A) Instaneous Forward Vo ltage (V) 0.7 1.0 Ta=150℃ 0.2 0.5 F y a v Instaneous Reverse Current (μA)200 400 600 8000 0.01 0.1 1.0 Instaneous Reverse Vo ltage (V) 100 TJ=25°C TJ=50°C TJ=75°C TJ=100 °C TJ=125 °C TJ=150 °C F c t o C c Junction Capacitance (pF) Reverse Voltage (V) 5 10 20 25 30 35 40 0.2 0.4 0.6 0.8 1.0 1.2 0.0 25 50 75 100 125 150 175 g. t D Average Forward Current (A) Ambient T emperature ( °C) Single phase half-wave 60 Hz resistive or inductive load Ta=100℃Ta=25℃