S1A YEASHIN | Alldatasheet

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Technical content

VOLTAGE - 50 to 1000 Volts CURRENT - 1.0 Ampere FE ATURES

  • For surface mounted applications
  • High temperature metallurgically bonded-no compression contacts as found in other diode-constructed rectifiers
  • Glass passivated junction
  • Built-in strain relief
  • Easy pick and place
  • Plastic package has Underwriters Laboratory Flammability Classification 94V-O
  • Complete device submersible temperature of 260 for 10 seconds in solder bath
  • High temperature soldering : 260 O C / 10 seconds at terminals
  • Pb free product at available : 99% Sn above meet RoHS environment substance directive request MECHAN ICAL DATA
  • Case: JEDEC DO-214AA molded plastic
  • Terminals: Solder plated, solderable per MIL-STD-750, Method 2026
  • Polarity: Indicated by cathode band
  • Standard packaging: 12mm tape (EIA-481) MAXIMUM RATINGS AND ELECTRICAL CH ARACTERISTI CS Ratings at 25 Jambient temperature unless otherwise specified. Single phase, half wave, 60 Hz, resistive or inductive load. For capacitive load, derate current by 20%. SYMBOLS S1A S1B S1D S1G S1J S1K S1M UNITS Maximum Recurrent Peak Reverse Voltage V RRM 50 100 200 400 600 800 1000 Volts Maximum RMS Voltage V RMS 35 70 140 280 420 560 700 Volts Maximum DC Blocking Voltage V DC 50 100 200 400 600 800 1000 Volts Maximum Average Forward Rectified Current at TL = 100 I (AV)

1.0 Amps

Peak Forward Surge Current 8.3ms single half sine wave superimposed on rated load(JEDEC method) I FSM

30.0 Amps

Maximum Instantaneous Forward Voltage at 1.0A V F

1.10 Volts

Maximum DC Reverse Current TA=25 At Rated DC Blocking Voltage TA=125 I R 5.0 50 uA Maximum Reverse Recovery Time (Note 1) T RR 2.5 S Typical Junction capacitance (Note 2) C J 12 PF Typical Thermal Resistance (Note 3) R 30.0 /W Operating and Storage Temperature Range T J STG -55 to +150 NOTES: 1. Reverse Recovery Test Conditions: IF=0.5A, IR=1.0A, Irr=0.25A 2. Measured at 1 MHz and Applied Vr=4.0 volts 3. 8.0mm2 (.013mm thick) land areas .083(2. 11) .075(1.9 1) .012(.3 05) .006(.15 2) .012(.31) .006(.15) .008(.20 3) .002(. 051 ) .050(1. 27) .030(0. 76) SMB/DO-214AA Unit:inch(mm) .1 55(3. 94) .130(3. 30) .185(4.7 0) .160(4. 06) . 096 (2. 44) .0 83( 2.13) .2 20(5. 59) .200(5. 08) θJL http://www.yeashin.com 1 REV.03 20150105 DATA SHEET S1A THRU S1M SEMICONDUCTOR u

RATING AND CHARACTERIS TIC CURVES 2.0 1.0 25 50 75 100 125 150 175 SINGLE PHASE HALF WAVE RESISTIVE OR INDUCTIVE P.C.B MOUNTED ON COPPER PAD AREAS LEAD TEMPERATURE, 1 2 5 10 20 50 100 8.3ms SINGLE HALF SINE WAVE JEDEC METHOD NUMBER OF CYCLES AT 60Hz Fi g . 1-FORWARD CURRENT DERATING CURVE Fi g . 2-MAXIMUM NON-REPETITIVE PEAK FORWARD SURGE CURRENT 0 20 40 60 80 100 120 140 1,00 0.1 0.01 0.001 T J = 125 T J = 75 T J = 25 PERCENT OF PEAK REVERSE VOLTAGE, % 100 5.0 2.0 1.0 0.5 0.2 0.1 .05 .02 .01 INSTANTANEOUS FORWARD VOLTAGE, VOLTS Fi g . 3-TYPICAL REVERSE CHARACTERISTICS Fi g . 4-TYPICAL INSTANTANEOUS FORWARD CHARACTERISTICS 1000 500 200 100 0.01 0.1 1 10 100 UNITS MOUNTED ON 20in (5.4mm ) + 0.5mil in (0.013mm) THICK COPPER LAND AREAS REVERSE VOLTAGE, VOLTS 100 .1 .2 .4 1.0 2 10 20 40 100 200 400 1000 TJ = 25 f = 1.0MHz Vsig = 50mVp-p REVERSE VOLTAGE, VOLTS Fig. 5-TRANSIENT THERMAL IMPEDANCE Fig. 6-TYPICAL JUNCTION CAPACITANCE PEAK FORWARD SURGE CURRENT, AMPERES AVERAGE FORWARD CURRENT, AMPERES INSTANTANEOUS REVERSE CURRENT, MICROAMPERES INSTANTANEOUS FORWARD CURRENT, AMPERES THERMAL IMPEDANCE( /W) CAPACITANCE, pF http://www.yeashin.com 2 REV.03 20150105 ° C S1A THRU S1M