S1A SEMTECH_ELEC | Alldatasheet
Document overview
- Manufacturer or author: Provided By ALLDATASHEET.COM(FREE DATASHEET DOWNLOAD SITE)
- PDF pages: 2
Technical content
Features
- Plastic package has Underwriters Laboratories Flammability Classification 94V-0
- Glass passivated chip junction
- For surface mount application
- Low profile package
- Built-in strain relief, ideal for automated placement Mechanical Data
- Case: SMA (DO-214AC), molded plastic
- Terminals: Solder plated, solderable per MIL-STD-750, Method 2026
- Polarity: Color band denotes cathode end Absolute Maximum Ratings and Characteristics Ratings at 25O C ambient temperature unless otherwise specified. Single phase, half wave, 60 Hz, resistive or inductive load. For capacitive load, derate current by 20%. Parameter Symbols S1A S1B S1D S1G S1J S1K S1M Units Maximum Recurrent Peak Reverse Voltage V RRM 50 100 200 400 600 800 1000 V Maximum RMS Voltage V RMS 35 70 140 280 420 560 700 V Maximum DC Blocking Voltage V DC 50 100 200 400 600 800 1000 V Maximum Average Forward Rectified Current I F(AV) 1 A Peak Forward Surge Current , 8.3 ms Single Half Sine-wave Superimposed on Rated Load (JEDEC Method) I FSM 30 A Maximum Forward Voltage at 1 A VF 1.1 V Maximum DC Reverse Current at Rated DC Blocking Voltage at TA = 25 OC at TA = 125 OC IR 5 50 μA Typical Junction Capacitance at VR = 4 V, f = 1 MHz CJ 12 pF Typical Thermal Resistance 1) RθJA RθJL OC/W Operating and Storage Temperature Range T J, TS - 55 to +1 50 OC areas
Dated : 14/04/2008 SEMTECH ELECTRONICS LTD. (Subsidiary of Sino-Tech International Holdings Limited, a company listed on the Hong Kong Stock Exchange, Stock Code: 724) S1A THRU S1M FIG.1-FORWARD DERATING CURVE LEAD TEMPERATURE, ( C) 0.2x0.2(5.0x5.0mm) Thick copper pad areas RESISTIVE OR INDUCTIVE LOAD AVERAGE FORW ARD CURRENT, A 0.2 04 0 60 0.8 0.4 0.6 1.2 12010080 140 160 S1(K.M) S1(A.J) PEAK FORW ARD SURGE CURRENT, A NUMBER OF CYCLES AT 60Hz 1 10 100 FIG.2- PEAK FORWARD SURGE CURRENT 100 TL=110 C 8.3ms Single half Sine Wave (JEDEC Method) S1(A.J) S1(K.M) INSTANTANEOUS FORW ARD CURRENT(A) INSTANTANEOUS FORWARD VOLTAGE (V) 0.6 0.80.4 0.01 0.1 TJ=25 C PULSE WIDTH=300 s 1% DUTY CYCLE o FIG.3-TYPICAL FORWARD CHARACTERISTICS 100 TJ=125 C INSTANTANEOUS REVERSE CURRENT( 0.001 0.1 0.01 PERCENT OF RATED PEAK REVERSE VOLTS,% C 6020 4001 0 0 80 TJ=25 TJ=75 C 100 FIG.4-TYPICAL REVERSE CHARACTERISTICS 100 JUNCTION CAPACITANCE, pF REVERSE VOLTAGE, V 0.01 0.1 1 10 100 FIG.5- TYPICAL JUNCTION CAPACITANCE TJ=25 C f=1.0MHz Vsig=50mVp-p TRANSIENT THERM AL IM PEDANCE ( C/W t, PULSE DURATION 0.01 0.1 1 10 100 100 o 1000 S1(A.J) S1(K.M) FIG.6- TRANSIENT THERMAL IMPEDANCE