S16ASD2 THINKISEMI | Alldatasheet
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Technical content
Features
/hexstar2 Low forward voltage drop /hexstar2 Avalanche energy rated(100% guarantee) /hexstar2 High current capability /hexstar2 Case: Surface Mount TO-220(SMD/SMT TO-220) /hexstar2 High surge current capability /hexstar2 Weight: 2.2 gram approximately /hexstar2 Polarity: As marked on diode body method 208 /hexstar2 Mounting position: Any /hexstar2 Terminals: Solderable per MIL-STD-202 Mechanical Data /hexstar2 Low reverse leakage current /hexstar2 Epoxy: UL 94V-0 rate flame retardant S16ASD2 thru S16MSD2 Pb Free Plating Product S16ASD2 thru S16MSD2
16.0 Amperes Surface Mount Dual Series Connection General Purpose Rectifiers
/hexstar2 PhotoVoltaic BY-PASS DIODE /hexstar2 PhotoVoltaic High-amperage Combiner Boxes /hexstar2 Alternator(Automotive Wireharness/Capacitor Bank) TO-263AB/D2PAK Internal Configuration Positive Negative Common Cathode Case Case Common Anode Doubler Case Tandem Polarity Case Series Tandem Polarity Suffix "SD2" V RRM 50 100 200 400 600 800 1000 V V RMS 35 70 140 280 420 560 700 V V DC 50 100 200 400 600 800 1000 V I F(AV) A C J pF R θJC °C/W T J T STG MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS (T A =25°C unless otherwise noted) UNIT Maximum repetitive peak reverse voltage Maximum RMS voltage PARAMETER SYMBOL S16A SD2 Maximum DC blocking voltage Maximum average forward rectified current 16 Peak forward surge current, 8.3 ms single half sine-wave superimposed on rated load I FSM 150 A Maximum instantaneous forward voltage (Note 1) @ 8 A V F 1.1 V Maximum reverse current @ rated V R T J =25°C I R μA T J =125°C 250 Typical junction capacitance (Note 2) 50 Typical thermal resistance 1.5 Operating junction temperature range - 55 to +150 Storage temperature range - 55 to +150 Note 1: Pulse test with PW=300μs, 1% duty cycle Note 2: Measured at 1 MHz and applied reverse voltage of 4.0 V DC. © 1995 Thinki Semiconductor Co., Ltd. http://www.thinkisemi.com.tw/ Page 1/3Rev.10T Suffix "DD2"Suffix "AD2"Suffix "CD2" S16B SD2 S16D SD2 S16G SD2 S16J SD2 S16K SD2 S16M SD2
A =25°C unless otherwise noted) RATINGS AND CHARACTERISTICS CURVES 0 50 100 150 AVERAGE FORWARD CURRENT(A) CASE TEMPERATURE( FIG.1 MAXMUM FORWARD CURRENT DERATING CURVE Resistive of inductive load 100 125 150 175 1 10 100 PEAK FORWARD SURGE CURRENT(A) NUMBER OF CYCLES AT 60 Hz FIG. 3 MAXIMUM NON-REPETITIVE FORWARD SURGE CURRENT 8.3ms single half sine wave 0.1 100 0 20 40 60 80 100 120 140 INSTANTANEOUS REVERSE CURRENT (μA) PERCENT OF RATED PEAK REVERSE VOLTAGE (%) FIG. 2 TYPICAL REVERSE CHARACTERISTICS T J =125°C T J =25°C 0.1 100 1000 INSTANTANEOUS FORWARD CURRENT (A) FORWARD VOLTAGE (V) FIG. 4 TYPICAL INSTANTANEOUS FORWARD CHARACTERISTICS Pulse width=300μs 1% duty cycle 100 120 11 0 1 0 0 JUNCTION CAPACITANCE (pF) REVERSE VOLTAGE (V) FIG. 5 TYPICAL JUNCTION CAPACITANCE f=1.0MHz Vslg=50mVp-p © 1995 Thinki Semiconductor Co., Ltd. http://www.thinkisemi.com.tw/ Page 2/3Rev.10T S16ASD2 thru S16MSD2 S16ASD2/S16BSD2/S16DSD2/S16GSD2 /S16JSD2/S16KSD2/S16MSD2
TO-263AB/D2PAK Package Outline Dimensions: © 1995 Thinki Semiconductor Co., Ltd. http://www.thinkisemi.com.tw/ Page 3/3Rev.10T S16ASD2 thru S16MSD2 Min Max Min Max A - 10.5 - 0.413 B 14.60 15.88 0.575 0.625 C 2.41 2.67 0.095 0.105 D 0.68 0.94 0.027 0.037 E 2.29 2.79 0.090 0.110 F 4.44 4.70 0.175 0.185 G 1.14 1.40 0.045 0.055 H 1.14 1.40 0.045 0.055 I 8.25 9.25 0.325 0.364 J 0.36 0.53 0.014 0.021 K 2.03 2.79 0.080 0.110 DIM. Unit (mm) Unit (inch) TO-263/D2PAK PACKAGE OUTLINE