S16ASD2 DIOTEC | Alldatasheet

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S16ASD2 ... S16MSD2 S16ASD2 ... S16MSD2 Surface Mount Silicon Rectifier Diodes – Half Bridge Silizium-Gleichrichterdioden für die Oberflächenmontage– Halbbrücke Version 2010-09-22 Dimensions - Maße [mm] Nominal current Nennstrom 16 A Repetitive peak reverse voltage Periodische Spitzensperrspannung 50...1000 V Plastic case Kunststoffgehäuse TO-263AB D2PAK Weight approx. Gewicht ca. 1.6 g Plastic material has UL classification 94V-0 Gehäusematerial UL94V-0 klassifiziert Standard packaging in tubes Standard Lieferform in Stangen Maximum ratings and Characteristics Grenz- und Kennwerte Type Typ Repetitive peak reverse voltage Periodische Spitzensperrspannung VRRM [V] 1) Surge peak reverse voltage Stoßspitzensperrspannung VRSM [V] 1) Forward voltage Durchlass-Spannung VF [V] 1), Tj = 25°C IF = 5 A IF = 8 A S16ASD2 50 50 < 1.0 < 1.1 S16BSD2 100 100 < 1.0 < 1.1 S16DSD2 200 200 < 1.0 < 1.1 S16GSD2 400 400 < 1.0 < 1.1 S16JSD2 600 600 < 1.0 < 1.1 S16KSD2 800 800 < 1.0 < 1.1 S16MSD2 1000 1000 < 1.0 < 1.1 Max. average forward current, R-load Dauergrenzstrom mit R-Last TC = 100°C TC = 100°C IFAV IFAV

8 A 1)

16 A 2)

Repetitive peak forward current Periodischer Spitzenstrom f > 15 Hz IFRM 30 A 3) Peak forward surge current, 50/60 Hz half sine-wave Stoßstrom für eine 50/60 Hz Sinus-Halbwelle TA = 25°C IFSM 135/150 A 1) Rating for fusing, t < 10 ms Grenzlastintegral, t < 10 ms TA = 25°C i2t 90 A2s 1) Junction temperature – Sperrschichttemperatur Storage temperature – Lagerungstemperatur Tj TS -50...+150°C -50...+175°C

1 Per diode – Pro Diode

2 Output current when operating two devices in a full bridge configuration

Ausgangsstrom bei Betrieb zweier Bauteile als Vollbrücke 3 Max. temperature of the case TC = 100°C – Max. Temperatur des Gehäuses TC = 100°C © Diotec Semiconductor AG http://www.diotec.com/ 1 0.4 4.5 0.2± 1.2 5.08 0.8 1.3 Type Typ 10.25 ±0.5

S16ASD2 ... S16MSD2 Characteristics Kennwerte Leakage current Sperrstrom Tj = 25°C VR = VRRM IR < 10 µA Thermal resistance junction to case Wärmewiderstand Sperrschicht – Gehäuse RthC < 2.5 K/W 1) 2 http://www.diotec.com/ © Diotec Semiconductor AG Rated forward current vs. temp. of the case in Abh. v. d. GehäusetemperaturZul. Richtstrom 120 100 IFAV [%] [°C]TC 150100500 [A] IF Forward characteristics (typical values) Durchlasskennlinien (typische Werte) T = 25°Cj T = 125°Cj 200a-(5a-0.95v)