S15U45S THINKISEMI | Alldatasheet
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Item Symbol Unit Conditions S15U45S Repetitive Peak Reverse Voltage VRRM V 45 Average Rectified Output Current Io A 60HZ sine wave, R- load, Ta =25℃ 15 Surge(Non-repetitive)Forward Current IFSM A 60HZ sine wave, 1 cycle, Ta=25℃ 300 Current Squared Time I2t A2s 1ms≤t＜8.3ms T j =25℃ 375 Storage Temperature Tstg ℃ -55 ~ +150 Junction Temperature Tj ℃ 05 1 +~5 5- Thermal Resistance(Typical) RθJ-C ℃/W Between Junction and Case 8 Item Symbol Unit Test Condition Min Ty p Max Peak Forward Voltage VFM V Reverse Breakdown Voltage VBR V IR=0.5mA 45 - - Leakage Current IR mA Limiting Values（Absolute Maximum Rating） Electrical Characteristics（Ta=25℃ Unless otherwise specified） ■ Features High surge Forward current capability Low Power loss, High efficiency IF（AV） 15A VRRM 45V ■ Applications Switching Power Supply Industry Photovoltaic Solar cell Protection Schottky Rectifier Mounting Pad Layout .260(6.60) .252(6.40) .215(5.40) .205(5.20) .014(0.35) .010(0.25) .039(1.00) .031(0.80) .075(1.90) .071(1.80) .045(1.15) .041(1.05) Bottom Dimensions in inches a nd (millimeters) TO-277/POWERDI5 .161(4.10) .154(3.90) .075(1.90) .067(1.70) .191(4.86) .132(3.36) .055(1.40) .055(1.40) .072(1.84) .033(0.85) LEFT PIN RIGHT PIN BOTTOM SIDE HEAT SINK Note: Pins Left & Right must be electrically connected at the printed circuit board. S15U45S Pb Free Plating Product S15U45S
15 Ampere Lower VF Miniature Surface Mount Schottky Barrier Rectifier
© 2006 Thinki Semiconductor Co., Ltd. http://www.thinkisemi.com/ Page 1/2Rev.05
Rating and Characteristic Curves Io(A) Tc( 50 100 FIG1: IF AV --Tc Derating 150 0.4 0.6 0.8 1.0 VF(V) IF(A) FIG3:Instantaneous Forward Voltage 0.1 1.0 Ta=25 100 0 0.2 0 20 40 60 80 100 0.01 0.1 1.0 100 V RM (%) I RRM (mA) Tj=100 Tj=25 FIG4:Typical Reverse Characteristics IFSM(A) 2 10 20 100 FIG2:Surge Forward Current Capadility Number of Cycles 120 180 240 360 300 8.3ms Single Half Since-Wave JEDEC Method S15U45S © 2006 Thinki Semiconductor Co., Ltd. http://www.thinkisemi.com/ Page 2/2Rev.05