S15AYD2 DIOTEC | Alldatasheet
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S15AYD2 ... S15MYD2 S15AYD2 ... S15MYD2 Surface Mount Silicon Rectifier Diodes – Single Diode Silizium-Gleichrichterdioden für die Oberflächenmontage– Einzeldiode Version 2011-05-25 Dimensions - Maße [mm] Nominal current Nennstrom 15 A Repetitive peak reverse voltage Periodische Spitzensperrspannung 50...1000 V Plastic case Kunststoffgehäuse TO-263AB D2PAK Weight approx. Gewicht ca. 1.6 g Plastic material has UL classification 94V-0 Gehäusematerial UL94V-0 klassifiziert Standard packaging in tubes Standard Lieferform in Stangen Maximum ratings and Characteristics Grenz- und Kennwerte Type Typ Repetitive peak reverse voltage Periodische Spitzensperrspannung VRRM [V] 1) Surge peak reverse voltage Stoßspitzensperrspannung VRSM [V] 1) Forward voltage Durchlass-Spannung VF [V] Tj = 25°C IF = 5 A IF = 15 A S15AYD2 50 50 < 1.0 < 1.3 S15BYD2 100 100 < 1.0 < 1.3 S15DYD2 200 200 < 1.0 < 1.3 S15GYD2 400 400 < 1.0 < 1.3 S15JYD2 600 600 < 1.0 < 1.3 S15KYD2 800 800 < 1.0 < 1.3 S15MYD2 1000 1000 < 1.0 < 1.3 Max. average forward current, R-load Dauergrenzstrom mit R-Last TC = 100°C IFAV 15 A Repetitive peak forward current Periodischer Spitzenstrom f > 15 Hz IFRM 80 A 1) Peak forward surge current, 50/60 Hz half sine-wave Stoßstrom für eine 50/60 Hz Sinus-Halbwelle TA = 25°C IFSM 400/450 A 1) Rating for fusing, t < 10 ms Grenzlastintegral, t < 10 ms TA = 25°C i2t 800 A2s 1) Junction temperature – Sperrschichttemperatur Storage temperature – Lagerungstemperatur Tj TS -50...+150°C -50...+175°C 1 Max. temperature of the case TC = 100°C – Max. Temperatur des Gehäuses TC = 100°C © Diotec Semiconductor AG http://www.diotec.com/ 1 0.4 4.5 0.2± 1.2 5.08 0.8 1.3 10.25 ±0.5 Type Typ
S15AYD2 ... S15MYD2 Characteristics Kennwerte Leakage current Sperrstrom Tj = 25°C Tj = 125°C VR = VRRM VR = VRRM IR IR < 10 µA < 100 µA Thermal resistance junction to case Wärmewiderstand Sperrschicht – Gehäuse RthC < 2.1 K/W 2 http://www.diotec.com/ © Diotec Semiconductor AG Rated forward current vs. temp. of the case in Abh. v. d. GehäusetemperaturZul. Richtstrom 120 100 IFAV [%] [°C]TC 150100500 [A] IF Forward characteristics (typical values) Durchlasskennlinien (typische Werte) T = 25°Cj T = 125°Cj 200a-(5a-0.95v)