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Technical content
Features
- High Surge Capability DO-8 Package
- Not ESD Sensitive Note: 1. Standard polarity: Stud is cathode. 3. Stud is base. Parameter Symbol S150J (R) S150K (R) Unit Repetitive peak reverse voltage V RRM 600 800 V RMS reverse voltage VRMS 420 560 V DC blocking voltage VDC 600 800 V 2. Reverse polarity (R): Stud is anode. S150J thru S150QR S150Q (R) 1000 700 S150M (R) Maximum ratings, at Tj = 25 °C, unless otherwise specified ("R" devices have leads reversed)
- Types from 600 V to 1200 V VRRM Silicon Standard Recovery Diode Conditions 1200 840 12001000 DC blocking voltage VDC 600 800 V Continuous forward current IF 150 150 A Operating temperature Tj -55 to 150 -55 to 150 °C Storage temperature Tstg -55 to 150 -55 to 150 °C Parameter Symbol S150J (R) S150K (R) Unit Diode forward voltage 1.2 1.2 10 10 μA 15 15 mA Thermal characteristics Thermal resistance, junction - case RthJC 0.35 0.35 °C/W 150 A3140 Reverse current IR VF 3140 V Electrical characteristics, at Tj = 25 °C, unless otherwise specified VR = 600 V, Tj = 25 °C IF = 150 A, Tj = 25 °C TC ≤ 180 °C Conditions 3140 3140 -55 to 150 150 -55 to 150 S150Q (R) 10 10 S150M (R) 0.35 VR = 600 V, Tj = 150 °C 0.35 1.2 1.2 -55 to 150 -55 to 150 TC = 25 °C, tp = 8.3 ms 12001000 Surge non-repetitive forward current, Half Sine Wave IF,SM www.genesicsemi.com/silicon-products/standard-recovery-rectifiers/ 1
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Package dimensions and terminal configuration Product is marked with part number and terminal configuration. S150J thru S150QR DO-8 (DO-205AA) G D H I F B Inches Millimeters Min Max Min Max A 3/8-24 UNF C 1.050 1.060 26.67 26.92 D 4.300 4.700 109.22 119.38 I 0.276 0.286 7.010 7.260 A E C www.genesicsemi.com/silicon-products/standard-recovery-rectifiers/ 3