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Technical content
Features
- High Surge Capability DO-4 Package
- Not ESD Sensitive Note: 1. Standard polarity: Stud is cathode. 3. Stud is base. Parameter Symbol Unit Re petitive peak reverse voltage VRRM V
- Types from 800 V to 1200 V VRRM S12K thru S12QR 2. Reverse polarity (R): Stud is anode. Conditions S12K (R) S12M (R) S12Q (R) 1000 Silicon Standard Recovery Diode Maximum ratings, at Tj = 25 °C, unless otherwise specified ("R" devices have leads reversed) 800 1200 pp g RMS reverse voltage VRMS V DC blocking voltage VDC V Continuous forward current IF A Operating temperature Tj °C Storage temperature Tstg °C Parameter Symbol Unit Diode forward voltage μA mA Thermal characteristics Thermal resistance, junction - case RthJC °C/W VR = 50 V, Tj = 25 °C IF = 12 A, Tj = 25 °C Reverse current IR VF Electrical characteristics, at Tj = 25 °C, unless otherwise specified Surge non-repetitive forward current, Half Sine Wave IF,SM A V TC = 25 °C, tp = 8.3 ms TC ≤ 144 °C Conditions 700560 2.50 2.50 VR = 50 V, Tj = 175 °C 12 12 12 1000800 S12Q (R) 1.1 10 10 -55 to 150 -55 to 150 -55 to 150 -55 to 150 -55 to 150 S12K (R) S12M (R) 2.50 12 12 12 280 280 280 840 1200 1.1 1.1 -55 to 150 Feb 2016 Latest v ersion of this datasheet at: www.genesicsemi.com/silicon-products/standard-recovery-rectifiers/ 1
Feb 2016 Latest v ersion of this datasheet at: www.genesicsemi.com/silicon-products/standard-recovery-rectifiers/ 2
Package dimensions and terminal configuration Product is marked with part number and terminal configuration. S12K thru S12QR DO- 4 (DO-203AA) J G F A E D P N B C M Inches Millimeters Min Max Min Max A 10-32 UNF B 0.424 0.437 10.77 11.10 E 0.453 0.492 11.50 12.50 F 0.114 0.140 2.90 3.50 N 0.031 0.045 0.80 1.15 P 0.070 0.79 1.80 2.00 Feb 2016 Latest v ersion of this datasheet at: www.genesicsemi.com/silicon-products/standard-recovery-rectifiers/ 3