S12B

S12A SHUNYE | Alldatasheet

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A TINGS AND ELECTRICA L CHARACTERISTICS VO L TS VO L TS VO L TS SYMBOLS UNITS Amps Amps V olts V RRM V RMS V DC I A I FSM V F 12.0 300.0 1.15 Operating junction and storage temperature range Maximum repetitive peak reverse voltage Maximum RMS voltage Maximum DC blocking voltage Maximum average forward rectified current at T L =75 C Peak forward surge current 8.3ms single half sine-wave superimposed on rated load (JEDEC Method) Maximum instantaneous forward voltage at 12A Maximum DC reverse current T A =25 C at rated DC blocking voltage T A =125 C T ypical junction capacitance (NOTE 1) Note: 1.Measured at 1MHz and applied reverse voltage of 4.0V D.C. P (5.0x5.0mm) copper pad areas I R 10.0 250.0 R θ JA C J T J T STG 44.0 78.0 -55 to +150 pF C A µ T ypical thermal resistance (NOTE 2) C/W Ratings at 25 C ambient temperature unless otherwise specified. Sing le phase half-wave 60Hz,resistive or inductive load,for capacitive load current derate by 20%. Case : JEDEC DO-214AB molded plastic body over passivated chip T erminals : Solder plated, solderable per MIL-STD-750, Method 2026 Polarity : Color band denotes cathode end Mounting Position Any W eight :0.007 ounce, 0.25grams The plastic package carries Underwriters Laboratory Flammability Classification 94 V For surface mounted applications Low reverse leakage Built-in strain relief,ideal for automated placement High forward surge current capability High temperature soldering guaranteed:

250 C/10 seconds at terminals

A TURES MECHANICA L D AT A 100 100 200 140 200 400 280 400 600 420 600 800 560 800 1000 700 1000 0.280(7. 0.260(6.60) 0.245(6.22) 0.220(5.59) DO-214AB Dimensions in inches and (millimeters) 0.126 (3.20) 14 (2.90) 0.060(1.52) 0.030(0.76) 0.320(8.13) 0.305(7.75) 0.012(0.305) 0.006(0.152) 0.008(0.203)MAX. 0.103(2.62) 0.079(2.06) Glass passivated chip junction S12A S12B S12D S12G S12J S12K S12M www.shunyegroup.com.cn V2.22 SUFACE MOUNT GENERAL PURPOSE SILICON RECTIFIER S12A THRU S12M

6.0 3.0 0 25 50 75 100 125 150 175 300 240 180 120 0.6 0.8 1.0 1.2 1.4 1.5 0.1 1.0 10 100 0.01 0.1 1 10 100 100 0.1 REVERSE VO LT AGE,VO L TS t,PULSE DUR A TION,sec. FIG. 5-TYPICA L JUNCTION CA P ACI T ANCE FIG. 6-TYPICA L TRANSIENT THERMA L IMPEDANC E FIG. 3-TYPICA L INS T AN T ANEOUS FO R W ARD CHARACTERISTICS NUMBER OF CYCLES A T 60 Hz FIG. 2-MAXIMUM NON-REPETITIVE PEAK FO R W ARD SURGE CURRENT FIG. 1- FO R W ARD CURRENT DER A TING CU R VE T N E R R U C D E I F I T C E R D R A W R O F E G A R E V A S E R E P M A D R A W R O F S U O E N A T N A T S N I S E R E P M A T N E R R U C F p E C N A T I C A P A C N O I T C N U J T N E R R U C E G R U S D R A W R O F K A E P S E R E P M A INS T AN T ANEOUS FO R W ARD VOLEAGE, VO L TS Single Phase Half W ave 60Hz Resistive or inductive Load 100 8.3ms SINGLE HALF SINE- W A VE (JEDEC Method) 0.0 T J =25 C 200 400 0 20 40 60 80 100 1,000 100 0.1 0.01 TJ=100 C TJ=25 C TJ=150 C PERCENT OF PEAK REVERSE VO LT AGE,% FIG. 4-TYPICA L REVERSE CHARACTERISTICS T N E R R U C E S R E V E R S U O E N A T N A T S N I S E R E P M A O R C I M E C N A D E P M I L A M R E H T T N E I S N A R T W C AMBIENT TEMPER A TURE, C T J =25 C PULSE WIDTH=300 µ s 1%DUT Y CYCLE www.shunyegroup.com.cn V2.22 SUFACE MOUNT GENERAL PURPOSE SILICON RECTIFIER S12A THRU S12M

www.shunyegroup.com.cn V2.22 Tape P P P D E F W T B K B B S E C T I O N B B A A A S E C T I O N A A D Symbol Dimension (mm) W 16.00 ±0. 4.00 ±0.10 8.00 ±0.10 2.00 ±0. Φ 1.5 ±0. Φ 1.5 ±0. E 1.75 ±0.10 F 7.50 ±0. 6.27 ±0.1 8.30 ±0.1 3.15 ±0.1 T 0.30 ±0. Reel D D D W Φ 178.0 2.0 Φ 50.0Min. Φ 13.0 0.5 20.0 2.0 Q uantity: 500PCS Reel Φ 330.0 2.0 Φ 13.5 0.5 H 2.5 1.0 20.0 2.0 Q uantity: 3000PCS Packaging SUFACE MOUNT GENERAL PURPOSE SILICON RECTIFIER S12A THRU S12M