S12XXXH STMICROELECTRONICS | Alldatasheet

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Technical content

S12xxxH January 1995 SCR Symbol Parameter Value Unit IT(RMS) RMS on-state current (180° conduction angle) Tc= 90°C1 2 A IT(AV) Average on-state current (180° conduction angle) Tc= 90°C 7.6 A ITSM Non repetitive surge peak on-state current (Tjinitial = 25°C) tp = 8.3 ms 132 A tp = 10 ms 120 I2t I2t Value for fusing tp = 10 ms 72 A 2s dI/dt Critical rate of rise of on-state current IG = 100 mA di G /dt = 1 A/µs.

100 A/ µs

Storage and operating junction temperature range - 40, + 150 - 40, + 125 Tl Maximum lead temperature for soldering during 10s at 4.5mm from case 260 °C ABSOLUTE RATINGS (limiting values) TO220 non-insulated (Plastic) IT(RMS) =1 2 A VDRM = 200V to 800V High surge current capability

FEATURES

Repetitive peak off-state voltage Tj= 125°C 200 400 600 800 V The S12xxxH series of SCRs uses a high performance MESA GLASS PNPN technology. These parts are intended for general purpose applications.

DESCRIPTION

K GA

PG (AV)=1W P GM =1 0W( t p=2 0µs) I GM =4 A( t p=2 0µs) GATE CHARACTERISTICS (maximum values) Symbol Parameter Value Unit Rth(j-a) Junction to ambient 60 °C/W Rth(j-c) Junction to case for DC 3 °C/W THERMAL RESISTANCES Symbol Test Conditions Sensitivity Unit 06 10 17 IGT VD =12V (DC) R L=33Ω Tj= 25°C MIN 0.5 10 4 mA MAX 5 25 15 VGT VD =12V (DC) R L=33Ω Tj= 25°C MAX 1.5 V VGD VD =VDRM R L=3.3kΩ Tj= 125°C MIN 0.2 V tgt V D =VDRM ITM =3xI T(AV) dIG /dt = 0.5A/µsI G = 40mA Tj= 25°C TYP 2 µs IH IT= 250mA Gate open Tj= 25 °C MAX 15 50 30 mA IL IG =1.2 IGT Tj= 25°C MAX 30 100 60 mA VTM ITM = 24A tp= 380µs Tj= 25 °C MAX 1.6 V IDRM IRRM VD =V DRM VR =V RRM Tj= 25°C MAX 5 µA Tj= 110°C MAX 1.5 mA dV/dt V D =67%V DRM Gate open Tj= 110°C MIN 200 100 V/ µs Tj= 110°C TYP 10 tq I TM =3xI T(AV)V R =35V dI/dt=10A/µs tp=100µs dV/dt=5V/µs VD = 67%VDRM Tj= 110°C MAX 100 µs

ELECTRICAL CHARACTERISTICS

ORDERING INFORMATION

PACKAGE : H = TO220 Non-insulated VOLTAGESENSITIVITY S12xxxH

P (W) 360 O =1 8 0 o = 120 o =9 0 o =6 0 o =3 0 o DC I (A)T(AV) Fig.1 :Maximum average power dissipation ver- sus average on-state current. 0 1 02 03 04 05 06 07 08 09 0 1 0 0 1 1 0 1 2 0 1 3 00 I (A)T(AV) = 180o DC Tcase ( C) o Fig.3 :Average on-state current versus case tem- perature. 2.6 2.4 2.2 2.0 1.8 1.6 1.4 1.2 1.0 0.8 0.6 0.4 Igt Tj( C)o Ih -40 -20 0 20 40 60 80 100 120 140 Igt[Tj] Igt[Tj=25 C]o Ih[Tj] Ih[Tj=25 C] o Fig.5 :Relative variation of gate trigger current and holding current versus junction temperature. 0 20 40 60 80 100 120 1400 12 -85 -95 -105 -115 -125 P (W) Tcase ( C) o = 180 o Tamb ( C)o Rth = 0 C/W 2C / W 4C / W 6C / W o o o o Fig.2 :Correlation between maximum average power dissipation and maximum allowable tem- perature (Tamb and Tcase) for different thermal resistances heatsink + contact. 1E-3 1E-2 1E-1 1E+0 1E+1 1E+2 5E+2 0.01 0.1 Zth/Rth Zth(j-c) Zth(j-a) tp(s) Fig.4 :Relative variation of thermal impedance versus pulse duration. 1 10 100 10000 100 120 140 Tj initial = 25 Co Number of cycles I (A)TSM Fig.6 :Non repetitive surge peak on-state current versus number of cycles. S12xxxH

I (A). I 2 t( A2s)TSM Tj initial = 25 Co ITSM tp(ms) I2 t Fig.7 :Non repetitive surge peak on-state current for a sinusoidal pulse with width : tp≤ 10ms, and corresponding value of I2t. 100 200 I (A)TM Tj initial 25 Co Tj max V (V)TM Tj max Vto =0.85V Rt =0.030 Fig.8 :On-statecharacteristics (maximum values). S12xxxH

Information furnished is believed to be accurate and reliable. However, SGS-THOMSON Microelectronics assumes no responsability for the consequences of use of such information nor for any infringement of patents or other rights of third parties which may result from its use. No license is granted by implication or otherwise under any patent or patent rights of SGS-THOMSON Microelectronics. Specifications mentioned in this publication are subject to change without notice. This publication supersedes and replaces all information previously supplied. SGS-THOMSON Microelectronics products are not authorized for use as critical components in life support devices or systems without express written approval of SGS-THOMSON Microelectronics.  1995 SGS-THOMSON Microelectronics - All rights reserved. SGS-THOMSON Microelectronics GROUP OF COMPANIES Australia - Brazil - France - Germany - Hong Kong - Italy - Japan - Korea - Malaysia - Malta - Morocco - The Netherlands Singapore - Spain - Sweden - Switzerland - Taiwan - Thailand - United Kingdom - U.S.A. PACKAGE MECHANICAL DATA TO220 Non-insulated (Plastic) D G I H J B A L N1 M N O P C F REF. DIMENSIONS Millimeters Inches A 10.3 0.406 B 6.3 6.5 0.248 0.256 C 9.1 0.358 D 12.7 0.500 F 4.2 0.165 G 3.0 0.118 H 4.5 4.7 0.177 0.185 I 3.53 3.66 0.139 0.144 J 1.2 1.3 0.047 0.051 L 0.9 0.035 M 2.7 0.106 N 5.3 0.209 N1 2.54 0.100 O 1.2 1.4 0.047 0.055 P 1.15 0.045 Marking : type number Weight : 1.8 g S12xxxH