S10WB20 SHINDENGEN | Alldatasheet
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Technical content
Copyright & Copy;2000 Shindengen Electric Mfg.Co.Ltd Bridge Diode OUTLINE DIMENSIONS RATINGS Square In-line Package SHINDENGEN Unit : mm Case : S10WBS10WB20
- Absolute Maximum Ratings Item Symbol Conditions Ratings Unit Storage Temperature Tstg -40 ～150 ℃ Operating Junction Temperature Tj 150 ℃ Maximum Reverse Voltage VRM 200 V Average Rectified Forward Current IO 50Hz sine wave, R-load With heatsink Tc=74℃ 10A 50Hz sine wave, R-load Without heatsink Ta=25℃ 3.2 Peak Surge Forward Current IFSM 50Hz sine wave, Non-repetitive 1cycle peak value, Tj=25℃ 170 A Current Squared Time I2t 1ms≦t＜10ms Ｔc=25℃ 110A 2ｓ Dielectric Strength Vdis Terminals to case, AC 1 minute 2k V Mounting Torque TOR （Recommended torque : 0.5N･m） 0.8 N ･m
- Electrical Characteristics (Tc=25℃) Item Symbol Conditions Ratings Unit Forward Voltage VF IF=5A, Pulse measurement, Rating of per diode Max.1.05 V Reverse Current IR VR=VRM, Pulse measurement, Rating of per diode Max.10 μA θjc junction to case, With heatsink Max.3.9 Thermal Resistance θjl junction to lead, Without heatsink Max.4 ℃/W θja junction to ambient, Without heatsink Max.24
0.1 100 S10WBx Tc=150°C [TYP] Tc=25°C [TYP] Pulse measurement per diode Forward Voltage V F [V] Forward Current I F [A]
S10WBx Forward Power Dissipation Tj= 150°C Sine wave Average Rectified Forward Current I O [A] Forward Power Dissipation P F [W]
S10WBx Forward Power Dissipation Tj= 150°C Sine wave Average Rectified Forward Current I O [A] Forward Power Dissipation P F [W]
0.8 1.6 2.4 3.2 4.8 5.6 0 20 40 60 80 100 120 140 160 S10WBx Derating Curve Sine wave R-load Free in air no heatsink l=25mm l=5mm l=15mm Glass-epoxy substrate Ambient Temperature Ta [ °C] Average Rectified Forward Current I O [A] PCB l
Peak Surge Forward Capability 100 150 200 250 300 350 1 10 100 S10WBx 2 5 20 50 IFSM 10ms 10ms 1 cycle Number of Cycles [cycles] Peak Surge Forward Current I FSM [A] non-repetitive, sine wave, Tj=25°C before surge current is applied