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Features

¬ Low forward voltage drop ¬ Fast switching for high efficiency ¬ High current capability ¬ Case:ITO-220AB Isolated/Insulated ¬ High surge current capability ¬ Weight: 2.2 gram approximately ¬ Polarity:As marked on diode body method 208 ¬ Mounting position: Any ¬ Terminals: Solderable per MIL-STD-202 Mechanical Data ¬ Low reverse leakage current R JC Temperature Range (1) Reverse recovery test conditions I F = 0.5A, I R = 1.0A, Irr = 0.25A. (2) Measured at 1.0 MHz and applied reverse voltage of 4.0 Volts DC. (3) Thermal Resistance junction to case. ¬ Epoxy: UL 94V-0 rate flame retardant Unit : inch (mm) S10A2CIA thru S10A6CIA © 2006 Thinki Semiconductor Co.,Ltd. http://www.thinkisemi.com/ Page 1/2 Pb Free Plating Product S10A2CIA thru S10A6CIA Pb

10.0 Ampere Insulated Common Anode Ultra Fast Recovery Rectifiers

Positive Negative DoublerCommon Cathode Case Case Case Common Anode Suffix "A" Suffix "D"Suffix "C" S10A2CIC S10A2CIA S10A2CID S10A4CIC S10A4CIA S10A4CID ITO-220AB .130(3.3) .114(2.9) .071(1.8) .055(1.4) .035(0.9) .011(0.3) (2.55) (2.55) .1 .1 .032(.8) .606(15.4) .543(13.8) .161(4.1)MAX .134(3.4) .165(4.2).381(9.7) .114(2.9) .098(2.5) .055(1.4) .039(1.0) MAX .583(14.8) .512(13.0) .118(3.0) S10A6CIC S10A6CIA S10A6CID

FIG.1 - FORWARD CURRENT DERATING CURVE FIG.3 - TYPICAL INSTANTANEOUS FORWARD CHARACTERISTICS AVERAGE FORWARD RECTIFIED CURRENT, AMPERES IINSTANTANEOUS FORWARD CURRENT, AMPERES 100 0.1 0 50 100 150 CASE TEMPERATURE, o C INSTANTANEOUS FORWARD VOLTAGE, VOLTS FIG.2 - MAXIMUM NON-REPETITIVE PEAK FORWARD SURGE CURRENT PEAK FORWARD SURGE CURRENT, AMPERES NUMBER OF CYCLES AT 60Hz 100 1 10 100 FIG.4 - TYPICAL REVERSE CHARACTERISTICS PERCENT OF RATED PEAK REVERSE VOLTAGE,% INSTANTANEOUS REVERSE CURRENT, MICROAMPERES 0.1 1000 100 20 40 60 80 100 FIG.5 - TYPICAL JUNCTION CAPACITANCE REVERSE VOLTAGE, VOLTS 0.1 JUNCTION CAPACITANCE, pF 1000 1.0 4.0 10 100 100

60 Hz Resistive or

Pulse Width 8.3ms Single Half-Sire-Wave (JEDEC Method) T J =25 o C PULSE WIDTH=300uS 1% DUTY CYCLE T J =125 o C T J =25 o C T J = 25 o C f = 1.0 MHZ Vsig = 50mVp-p S10A2CIA S10A4CIA S10A6CIA © 2006 Thinki Semiconductor Co.,Ltd. http://www.thinkisemi.com/ Page 2/2 S10A2CIA thru S10A6CIA