SD5000 STMICROELECTRONICS | Alldatasheet
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Technical content
GENERAL PURPOSE LINEAR APPLICATIONS RF & MICROWAVE TRANSISTORS .280 4L STUD (M122) epoxy sealed .GOLD METALLIZATION .EMITTER SITE BALLASTING .INTERNAL INPUT MATCHING .OVERLAY GEOMETRY .METAL/CERAMIC PACKAGE .COMMON EMITTER CONFIGURATION .P OUT = 1.5 W MIN. WITH 9.5 dB GAIN
DESCRIPTION
The SD5000 is a NPN Silicon Transistor designed for high gain linear performance at 1000 MHz. This part uses gold metallized die and polysilicon site ballasting to achieve high reliability and rug- gedness. The SD5000 can be used for applications such as Telecommunications, Radar, ECM, Space and other commercial and military systems. PIN CONNECTION BRANDING S10A015 ORDER CODE SD5000 ABSOLUTE MAXIMUM RATINGS (Tcase = 25°C) Symbol Parameter Value Unit VCBO Collector-Base Voltage 50 V VCES Collector-Emitter Voltage 50 V VEBO Emitter-Base Voltage 3.5 V IC Device Current 1.0 A PDISS Power Dissipation 7.0 W TJ Junction Temperature +200 °C TSTG Storage Temperature − 65 to +150 °C R TH(j-c) Junction-Case Thermal Resistance 25 °C/W SD5000 1. Collector 3. Base 2. Emitter 4. Emitter THERMAL DATA November 1992 1/4
ELECTRICAL SPECIFICATIONS (Tcase = 25°C) Symbol Test Conditions Value Unit Min. Typ. Max. POUT 1dB f = 1 GHz V CC = 20 V I C = 220 mA 1.5 — — W G P f= 1 GHz V CC = 20 V I C = 220 mA 9.5 — — dB VSWR f = 1 GHz V CC = 20 V I C = 220 mA — — 25:1 — C OB f= 1 MHz V CB = 20 V — — 4.0 pF STATIC Symbol Test Conditions Value Unit Min. Typ. Max. BV CBO IC = 10mA 50 — — V BV EBO IE = 5mA 3.5 — — V BV CES IC = 10mA 50 — — V BV CEO IC = 5mA 23 — — V ICBO VCB = 28V — 0.2 — mA hFE VCE = 5V I C = 100mA 18 — 200 — DYNAMIC SD5000
B1, B2 : Ferrite Beads C1,C2 : 120 pF Chip Capacitor C3 : .4 - 2.5 pF Johanson Capacitor C4 : .8 - 8 pF Johanson Capacitor C5,C6 C7,C8 : 220 pF Chip Capacitor C9,C10 : 1000 pF Chip Capacitor C11 : .1 µF Capacitor C12,C13 : 15,000 pF EMI Filter L1,L2 : 5 Turn Choke; Wire Diameter .025”, I.D. 0.125” Substrate material: Er = 10.2, H= .050”, 1oz. Copper IMPEDANCE DATA FREQ. Z IN (Ω )Z CL (Ω ) 1000 MHz 4.0 + j 3.3 20.8 + j 33.3 SD5000
Ref.: Dwg. No. 12-0122 Information furnished is believed to be accurate and reliable. However, SGS-THOMSON Microelectronics assumes no responsability for the consequences of use of such information nor for any infringement of patents or other rights of third parties which may results from its use. No license is granted by implication or otherwise under any patent or patent rights of SGS-THOMSON Microelectronics. Specificationsmentioned in this publication are subject to change without notice. This publication supersedes and replaces all information previously supplied. SGS-THOMSON Microelectronicsproducts are not authorized foruse ascritical componentsin life support devices or systems without express written approval of SGS-THOMSON Microelectonics. 1994 SGS-THOMSON Microelectronics - All Rights Reserved SGS-THOMSON Microelectronics GROUP OF COMPANIES Australia - Brazil - France - Germany - Hong Kong - Italy - Japan - Korea - Malaysia - Malta - Morocco - The Netherlands - Singapore - Spain - Sweden - Switzerland - Taiwan - Thailand - United Kingdom - U.S.A SD5000