RVQ040N05TR VBSEMI | Alldatasheet
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Technical content
N-Channel 60 V (D-S) MOSFET
FEATURES
- TrenchFET® power MOSFET
- 100 % Rg and UIS tested Notes a. Pulse test; pulse width 300 μs, duty cycle 2 %. b. When mounted on 1" square PCB (FR-4 material). PRODUCT SUMMARY VDS (V) 60 RDS(on) () at VGS = 10 V 0.030 RDS(on) () at VGS = 4.5 V 0.035 ID (A) 7 Configuration Single ABSOLUTE MAXIMUM RATINGS (TC = 25 °C, unless otherwise no ted) PARAMETER SYMBOL LIMIT UNIT Drain-Source Vol tage VDS 60 V Gate-Source Voltage VGS ± 20 Continuous Drain Current TC = 25 °C ID A TC = 125 °C 4 Continuous Source Current (Diode Conduction) IS 6 Pulsed Drain Current a IDM 29 Single Pulse Avalanch e Current L = 0.1 mH IAS 10 Single Pulse Avalanche En ergy EAS 5m J Maximum Power Dissipat ion a TC = 25 °C PD W TC = 125 °C 1.6 Operating Junction and Storage Te mperature Range TJ, Tstg - 55 to +175 °C THERMAL RESISTANCE RATINGS PARAMETER SYMBOL LIMIT UNIT Junction-to-Ambient PC B Mount b RthJA 110 °C/W Junction-to-Foot (Drain) RthJF 30 RVQ040N05TR www.VBsemi.com Top View D D G D D S TSOP-6 g A ll data sheet.com
a. Pulse test; puls e width 300 μs, duty cycle 2 %. b. Guaranteed by design, not subj ect to production testing. c. Independent of operating temperature. Stresses beyond those listed under “A bsolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only, and functional operation of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum rating conditions for extended periods may affect device reliability. SPECIFICATIONS (TC = 25 °C, unless othe rwise noted) PARAMETER SYMBOL TEST CONDIT IONS MIN. TYP. MAX. UNIT Static Drain-Sour ce Breakdown Voltage VDS VGS = 0, ID = 250 μA 60 - - V Gate-Source Thre shold Voltage VGS(th) VDS = VGS, ID = 250 μA 1.0 - 2.5 Gate-Source Leakage IGSS VDS = 0 V, VGS = ± 12 V - - ± 500 nA VDS = 0 V, VGS = ± 20 V - - ± 1 mA Zero Gate Vo ltage Drain Current IDSS VGS = 0 V VDS = 60 V - - 1 μA VGS = 0 V V DS = 60 V, TJ = 125 °C - - 50 VGS = 0 V V DS = 60 V, TJ = 175 °C - - 150 On-State Dr ain Current a ID(on) VGS = 10 V VDS5 V 10 - - A Drain-Source On-State Resistance a RDS(on) VGS = 10 V ID = 5 A - 0.030 - VGS = 10 V ID = 5 A, TJ = 125 °C - 0.050 - VGS = 10 V I D = 5 A, TJ = 175 °C - 0.070 - VGS = 4.5 V ID = 4 A - 0.035 - Forward Transconductance a gfs VDS = 15 V, ID = 4 A - 12 - S Dynamic b Input Capacitance Ciss VGS = 0 V V DS = 30 V, f = 1 MHz - 560 700 pF Output Capacitance Coss -8 5 1 0 5 Revers e Transfer Capacitance Crss -5 5 7 0 Total Gate Charge c Qg VGS = 4.5 V V DS = 30 V, ID = 4 A -7 . 6 1 2 nC Gate-Sourc e Charge c Qgs -2 . 1- Gate-Drain Charge c Qgd -4 . 1- Gate Resistance Rg f = 1 MHz 1.2 2.4 3 .6 Turn-On Delay Time c td(on) VDD = 30 V, RL = 7.5 ID 4 A, VGEN = 10 V, Rg = 1 -9 1 4 ns Rise Time c tr -1 2 1 8 Turn-Off Dela y Time c td(off) -1 9 2 9 Fall Time c tf -7 1 1 Source-Drain Diode Ra tings and Characteristics b Pulsed Current a ISM -- 2 9 A Forward Volt age VSD IF = 1.6 A, VGS = 0 - 0.75 1.2 V RVQ040N05TR www.VBsemi.com g A ll data sheet.com
RISTICS (TA = 25 °C, unless other wise noted) Output Characteristics Transconductance Capa citance Transfer Characteristics On-Resistance vs. Drain Current Gate Charge 0 1234 5 VGS =1 0Vt h r u5V VGS =4V VDS - Drain-to-Source Voltage (V) - Drain Current (A)I D VGS = 3 V - Transconductance (S)gfs - Drain Current (A)I D 02 468 1 0 TC = 125 °C TC = - 55 °C TC = 25 °C 0 1 02 03 04 05 06 0 200 400 600 800 1000 VDS - Drain-to-Source Voltage (V) C - Capacitance (pF) Coss Crss Ciss 012345 TC = 25 °C TC = 125 °C TC = - 55 °C VGS - Gate-to-Source Voltage (V) - Drain Current (A)I D 0.00 0.03 0.06 0.09 0.12 0.15 03 69 1 2 1 5 VGS =1 0V VGS =4 . 5V - On-Resistance (Ω)RDS(on) ID - Drain Current (A) 0 4 8 1 21 62 0 VGS - Gate-to-Source Voltage (V) Qg - Total Gate Charge (nC) VDS = 30 V ID = 4 A RVQ040N05TR www.VBsemi.com g A ll data sheet.com
RISTICS (TA = 25 °C, unless other wise noted) Gate Current vs. Gate-Source Voltage On-Resistance vs. Junction Temperature On-Resistance vs. Gate-Source Voltage Source-Drain Diode Forward Voltage Threshold Voltage Drain-Source Breakdown vs. Junction Temperature VGS - Gate-to-Source Voltage (V) - Gate Current (A)IGSS 10-8 10-6 10-4 10-2 10-10 0 6 12 18 24 30 TJ = 25 °C TJ = 150 °C 0.6 0.9 1.2 1.5 1.8 2.1 - 50 - 25 0 25 50 75 100 125 150 175 ID =3 . 2A VGS =1 0V TJ - Junction Temperature (°C) (Normalized)- On-ResistanceRDS(on) 0.00 0.04 0.08 0.12 0.16 0.20 012 3456789 1 0 TJ = 25 °C TJ = 150 °C - On-Resistance (Ω)RDS(on) VGS - Gate-to-Source Voltage (V) 0.01 0.001 0.1 100 TJ = 25 °C TJ = 150 °C VSD - Source-to-Drain Voltage (V) - Source Current (A)I S - 1.2 - 0.9 - 0.6 - 0.3 0.0 0.3 0.6 - 50 - 25 0 25 50 75 100 125 150 175 ID = 250 µA ID =5m A Variance (V)VGS(th) TJ - Temperature (°C) VDS - Drain-to-Source Voltage (V) TJ - Junction Temperature (°C) - 50 - 25 0 25 50 75 100 125 150 175 ID =1m A RVQ040N05TR www.VBsemi.com g A ll data sheet.com
THERMAL RATINGS (TA = 25 °C, unless othe rwise noted) Safe Operating Are a Normalized thermal Transient Impedance, Junction-to-Ambient 0.01 0.01 0.1 1 10010 0.1 VDS - Drain-to-Source Voltage (V) * VGS > minimum VGS at which RDS(on) is specified ID - Drain Current (A) Limited by RDS(on)* BVDSS Limited 1 ms 10 ms 1 s, 10 s, DC 100 ms 100 μs IDM Limited TC = 25 °C Single Pulse 10-3 10-2 1 10 100010-110-4 100 0.2 0.1 0.05 Square Wave Pulse Duration (s) Normalized Effective Transient Thermal Impedance 0.1 0.01 Single Pulse Notes: PDM 1. Duty Cycle, D = 2. Per Unit Base = RthJA = 110 °C/W 3. TJM -T A =P DMZthJA(t) 4. Surface Mounted Duty Cycle = 0.5 0.02 RVQ040N05TR www.VBsemi.com g A ll data sheet.com
THERMAL RATINGS (TA = 25 °C, unless othe rwise noted) Normalized thermal Tran sient Impedance, Junction-to-Foot Note
- The characteristics shown in the two graphs - Normalized Transient Thermal Impedance Junction to Ambient (25 °C) - Normalized Transient Thermal Impedance Junction to Foot (25 °C) are given for general guidelines only to enable the user to get a “ball park” indication of part capabilities. The data are extracted from single pulse transient thermal impedance characteristics which are developed from empirical measurements. The latter is valid for the part mounted on printed circuit board - FR4, size 1" x 1" x 0.062" , double sided with 2 oz. copper, 100 % on both sides. The part ca pabilities can widely vary depending on actual application parameters and operating conditions. 0.1 0.01 0.2 Duty Cycle = 0.5 S quare Wave Pulse Duration (s) Normalized Effective Transient Thermal Impedance Single Pulse 0.1 10-3 10-2 110-110-4 0.02 0.05 RVQ040N05TR www.VBsemi.com g A ll data sheet.com
mprove reliability, function or design or for other reasons, product specifications and data are subject to c hange without notice. Taiwan VBsemi Electron ics Co., Ltd., branches, agents, employees, and all persons acting on its or their representatives (co llectively, the "Taiwan VBsemi"), assumes no responsibility for any errors, inaccuracies or incomplete data co ntained in the table or any other any disclosure of any information related to the product.(www.VBsemi.com) Taiwan VBsemi makes n o guarantee, representation or warranty on the product for any particular purpose of any goods or contin uous production. To the maximum extent permitted by applicable law on Taiwan VBsemi relinquished: (1) a ny application and all liability arising out of or use of any products; (2) any and all liability, including but not l imited to special, consequential damages or incidental ; (3) any and all implied warranties, including a particu lar purpose, non-infringement and merchantability guarantee. Statement on certai n types of applications are based on knowledge of the product is often used in a typical application of the general product VBsemi Taiwan demand that the Taiwan VBsemi of. Statement on whether the product is suitable for a particular application is non-binding. It is the customer's responsibility to verify specific product features in t he products described in the specification is appropriate for use in a particular application. Parameter data shee ts and technical specifications can be provided may vary depending on the application and performance over tim e. All operating parameters, including typical parameters must be made by customer's technical experts v alidated for each customer application. Product specifications do not expand or modify Taiwan VBsemi purchasing te rms and conditions, including but not limited to warranty herein. Unless expressly st ated in writing, Taiwan VBsemi products are not intended for use in medical, life saving, or life sustaining applications or any other application. Wherein VBsemi product failure could lead to personal injury or death, use or sale of products used in Taiwan VBsemi such applications using client did not express their own risk. Contact yo ur authorized Taiwan VBsemi people who are related to product design applications and other terms and con ditions in writing. The information prov ided in this document and the company's products without a license, express or implied, by estoppel or othe rwise, to any intellectual property rights granted to the VBsemi act or document. Product names and trademarks referred to herein are trademarks of their respective representatives will be all. MaterialCategoryPo licy Taiwan VBsemi Electr onics Co., Ltd., hereby certify that all of the products are determined to be oHS compliant and meets the definition of restrictions under Directive of the European Parliament 2011/65 / EU, 2011 Ni an. 6. 8 Ri Yue restrict the use of certain hazardous substances in electrical and electronicequipme nt(EEE)-modification,unlessotherwisespecifiedasinconsistent.(www.VBsemi.com) Pleasenotethatsome documentsmaystillrefertoTaiwanVBsemiRoHSDirective2002/95/EC.We confirm that all prod ucts identified as consistent with the Directive 2002/95 / EC European Directive 2011/65/. Taiwan VBsemi Electro nics Co., Ltd. hereby certify that all of its products comply identified as halogen-free haloge n-free standards required by the JEDEC JS709A. Please note that some Taiwanese VBsemi documents s till refer to the definition of IEC 61249-2-21, and we are sure that all products conformtoconfirmcom pliancewithIEC61249-2-21standardlevelJS709A. RVQ040N05TR www.VBsemi.com A ll data sheet.com