RVF EDI | Alldatasheet

Document overview

  • Manufacturer or author: Provided By ALLDATASHEET.COM(FREE DATASHEET DOWNLOAD SITE)
  • PDF pages: 2

Technical content

Storage Temperature Range, TSTG A 0.1 Max. DC Reverse Current @ PRV and 100 oC, IR -55 to +150oC oC ELECTRICAL CHARACTERISTICS(at TA =25 C Unless Otherwise Specified) FAST RECOVERY - HIGH VOLTAGE HIGH CURRENT SILICON RECTIFIERS -55 to +150oC oC A Max. Reverse Recovery Time , T (Fig.4) Amps Ambient Operating Temperature Range,TA Forward Voltage Repetitive Peak,I FRM Max.One-Half Cycle Surge Current, IFM (Surge )@ 60Hz Amps2 150 nanoseconds Max. DC Reverse Current @ PRV and 25 oC, IR EDI reserves the right to change these specifications at any time without notice. MATCHED SILICON RECTIFIER ELEMENTS DIFFUSED SILICON JUNCTIONS PRV 5,000 TO 40,000 VOLTS AVALANCHE CHARACTERISTICS LOW LEAKAGE EDI Type No. Peak Reverse Voltage PRV (V olts) Average Rectified Current @55 oC@100 oC Amps @25 oC IF =0.5 ADC (Volts) Length L Fig.3 Inches MM RVF5 5,000 0.50 0.33 9 1.25 31.75 RVF8 8,000 0.50 0.33 12 1.75 44.45 RVF10 10,000 0.33 15 2.00 50.80 RVF15 15,000 0.50 0.33 23 3.00 76.20 RVF20 20,000 0.40 0.27 30 4.00 101.60 RVF25 25,000 0.40 0.27 38 4.50 114.30 RVF30 30,000 0.40 0.27 45 5.50 139.70 RVF40 40,000 0.40 0.27 60 7.00 177.80 0.50 rr Max. Fwd Voltage

C 500 25 50 75 100 125 150 FIG.1 OUTPUT CURRENT vs AMBIENT TEMPERATURE FIG.2 NON-REPETITIVE SURGE CURRENT RATINGS RVF FIG.3 PACKAGE STYLE 21 GRAY OAKS AVENUE * YONKERS. NEW YORK 10710 914-965-4400 * FAX 914-965-5531 * 1-800-678-0828 ELECTRONIC DEVICES, INC. DESIGNERS AND MANUFACTURERS OF SOLID STATE DEVICES SINCE 1951. AMBIENT TEMP O ( C ) A AVG. RECTIFIED D.C. CURRENT MILLAMPERES Ee-mail:sales@edidiodes.com Wwebsite: http://www.edidiodes.com* _+L B TEST CIRCUIT FIG.4 TYPICAL REVERSE RECOVERY WAVEFORM PULSE GENERATOR D.U.T. SCOPER2

1 OHM

50 OHM

E D LTR A B C D E INCHES MILLIMETERS .051 DIA. +_ .03 +_ . 7 6 1.30 DIA. 0.31 MAX. 0.76 MAX. 2.0 MIN. 19.30 MAX. 7.9 MAX. 50.8 MIN. Prior to the manufacture of these assemblies, the individual silicon junction is measured for maximum recovery time in the test circuit shown. RVF 5-15 RVF 20-40 100 1 2 3 4 5 6 7 9 10 20 30 40 50 608 CYCLES(60 Hz) 0.1SEC 1.0SEC % MAXIMUM SURGE 1.0A 0.5A TRR ZERO REFERENCE 0.25A R R1, 2 NON-INDUCTIVE RESISTORS PULSE GENERATOR - HEWLETT PACKARD 214A OR EQUIV. IKC REP.RATE, 10 SEC. PULSE WIDTH ADJUST PULSE AMPLITUDE FOR PEAK IR It is recommended that a proper heat sink be used on the terminals of this device between the body and the soldering point to prevent damage form excess heat.