RTQ020N05TR VBSEMI | Alldatasheet
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N-Channel 60 V (D-S) MOSFET
FEATURES
- TrenchFET® power MOSFET
- 100 % Rg and UIS tested Notes a. Pulse test ; pulse width 300 μs, duty cycle 2 %. b. When mounted on 1" square PCB (FR-4 material). PRODUCT SUMMARY VDS (V) 60 RDS(on) () at VGS = 10 V 0.030 RDS(on) () at VGS = 4.5 V 0.035 ID (A) 7 Configuration Single ABSOLUTE MAXIMUM RATINGS (TC = 25 °C, unle ss otherwise noted) PARAMETER SYMBOL LIMIT UNIT Drain-Source Voltage VDS 60 V Gate-Source Voltage VGS ± 20 Continuous Drain Current TC = 25 °C ID A TC = 125 °C 4 Continuous Source Current (Diode Conduction) IS 6 Pulsed Drain Current a IDM 29 Single Pulse Av alanche Current L = 0.1 mH IAS 10 Single Pulse Avalanc he Energy EAS 5m J Maximum Power D issipation a TC = 25 °C PD W TC = 125 °C 1.6 Operating Junction and Stor age Temperature Range TJ, Tstg - 55 to +175 °C THERMAL RESISTANCE RATINGS PARAMETER SYMBOL LIMIT UNIT Junction-to-A mbient PCB Mount b RthJA 110 °C/W Junction-to-Foot (Dr ain) RthJF 30 RTQ020N05TR www.VBsemi.com Top View D D G D D S TSOP-6 g A ll data sheet.com
a. Pulse te s t; pulse width 300 μs, duty cycle 2 %. b. Guaranteed by design, not subj ect to production testing. c. Independent of operating temperature. Stresses beyond those listed u nder “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only, and functional operation of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum rating conditions for extended periods may affect device reliability. SPECIFICATIONS (TC = 25 °C, un less otherwise noted) PARAMETER SYMBOL TE ST CONDITIONS MIN. TYP. MAX. UNIT Static Drain- Source Breakdown Voltage VDS VGS = 0, ID = 250 μA 60 - - V Gate-Sou rce Threshold Voltage VGS(th) VDS = VGS, ID = 250 μA 1.0 - 2.5 Gate-Source Leakage IGSS VDS = 0 V, VGS = ± 12 V - - ± 500 nA VDS = 0 V, VGS = ± 20 V - - ± 1 mA Zero Gate Voltage Drain Current IDSS VGS = 0 V VDS = 60 V - - 1 μA VGS = 0 V V DS = 60 V, TJ = 125 °C - - 5 0 VGS = 0 V V DS = 60 V, TJ = 175 °C - - 1 50 On-S tate Drain Current a ID(on) VGS = 10 V VDS5 V 10 - - A Drain-Source On-State R esistance a RDS(on) VGS = 10 V ID = 5 A - 0.030 - VGS = 10 V ID = 5 A, TJ = 125 °C - 0.050 - VGS = 10 V I D = 5 A, TJ = 175 °C - 0.070 - VGS = 4.5 V ID = 4 A - 0.035 - Forward Transc onductance a gfs VDS = 15 V, ID = 4 A - 12 - S Dynamic b Input Capacitance Ciss VGS = 0 V V DS = 30 V, f = 1 MHz - 560 700 pF Output Capacitance Coss -8 5 1 0 5 Rev erse Transfer Capacitance Crss -5 5 7 0 Total Gate Charge c Qg VGS = 4.5 V V DS = 30 V, ID = 4 A -7 . 6 1 2 nC Gate- Source Charge c Qgs -2 . 1- Gate-Drain Charge c Qgd -4 . 1- Gate Resista nce Rg f = 1 MHz 1.2 2.4 3.6 Turn-On Delay Time c td(on) VDD = 30 V, RL = 7.5 ID 4 A, VGEN = 10 V, Rg = 1 -9 1 4 ns Rise Time c tr -1 2 1 8 Turn-Off D elay Time c td(off) -1 9 2 9 Fall T ime c tf -7 1 1 Source-Drain D iode Ratings and Characteristics b Pulsed Current a ISM -- 2 9 A Forward V oltage VSD IF = 1.6 A, VGS = 0 - 0.75 1.2 V RTQ020N05TR www.VBsemi.com g A ll data sheet.com
CTERISTICS (TA = 25 °C, unless ot herwise noted) Output Characteristics Transconduct ance Capacitance Transfer Characteristics On-Resistance vs. Drain Current Gate Charge 0 1234 5 VGS =1 0Vt h r u5V VGS =4V VDS - Drain-to-Source V oltage (V) - Drain Current (A)I D VGS = 3 V - Transconductance (S)gfs - Drain Current (A)I D 02 468 1 0 TC = 125 °C TC = - 55 °C TC = 25 °C 0 1 02 03 04 05 06 200 400 600 800 1000 VDS - Drain-to-Source Voltage (V) C - Capacitance (pF) Coss Crss Ciss 012345 TC = 25 °C TC = 125 °C TC = - 55 °C VGS - Gate-to-Source V oltage (V) - Drain Current (A)I D 0.00 0.03 0.06 0.09 0.12 0.15 03 69 1 2 1 5 VGS =1 0V VGS =4 . 5V - On-Resistance (Ω)RDS(on) ID - Drain Current (A) 0 4 8 1 21 62 0 VGS - Gate-to-Source Voltage (V) Qg - Total Gate Charge (nC) VDS = 30 V ID = 4 A RTQ020N05TR www.VBsemi.com g A ll data sheet.com
CTERISTICS (TA = 25 °C, unless ot herwise noted) Gate Current vs. Gate-Source Voltage On-Resistance vs . Junction Temperature On-Resistance vs. Gate-Source Voltage Source-Drain Diode Forward Voltage Threshold Voltage Drain-Source Breakdown vs. Junction Temperature VGS - Gate-to-Source V oltage (V) - Gate Current (A)IGSS 10-8 10-6 10-4 10-2 10-10 0 6 12 18 24 30 TJ = 25 °C TJ = 150 °C 0.6 0.9 1.2 1.5 1.8 2.1 - 50 - 25 0 25 50 75 100 125 150 175 ID =3 . 2A VGS =1 0V TJ - Junction Temperature (°C) (Normalized)- On-ResistanceRDS(on) 0.00 0.04 0.08 0.12 0.16 0.20 012 3456789 1 0 TJ = 25 °C TJ = 150 °C - On-Resistance (Ω)RDS(on) VGS - Gate-to-Source V oltage (V) 0.01 0.001 0.1 100 TJ = 25 °C TJ = 150 °C VSD - Source-to-Drain Voltage (V) - Source Current (A)I S - 1.2 - 0.9 - 0.6 - 0.3 0.0 0.3 0.6 - 50 - 25 0 25 50 75 100 125 150 175 ID = 250 µA ID =5m A Variance (V)VGS(th) TJ - Temperature (°C) VDS - Drain-to-Source V oltage (V) TJ - Junction Temperature (°C) - 50 - 25 0 25 50 75 100 125 150 175 ID =1m A RTQ020N05TR www.VBsemi.com g A ll data sheet.com
THERMAL RATINGS (TA = 25 °C, unle ss otherwise noted) Safe Operatin g Area Normalized thermal Transient Impedance, Junction-to-Ambient 0.01 0.01 0.1 1 10010 0.1 VDS - Drain-to-Source Voltage (V) * VGS > minimum VGS at which RDS(on) is specified ID - Drain Current (A) Limited by RDS(on)* BVDSS Limited 1 ms 10 ms 1 s, 10 s, DC 100 ms 100 μs IDM Limited TC = 25 °C Single Pulse 10-3 10-2 1 10 100010-110-4 100 0.2 0.1 0.05 Square Wave Pulse D uration (s) Normalized Effective Transient Thermal Impedance 0.1 0.01 Single Pulse Notes: PDM 1. Duty Cycle, D = 2. Per U nit Base = RthJA = 110 °C/W 3. TJM -T A =P DMZthJA(t) 4. Surface Mounted Duty Cycle = 0.5 0.02 RTQ020N05TR www.VBsemi.com g A ll data sheet.com
THERMAL RATINGS (TA = 25 °C, unle ss otherwise noted) Normalized therma l Transient Impedance, Junction-to-Foot Note
- The characteristics shown in the two graphs - Normalized Transient Thermal Impedance Junction to Ambient (25 °C) - Normalized Transient Thermal Impedance Junction to Foot (25 °C) are given for general guidelines only to enable the user to get a “ball park” indication of part capabilities. The data are extracted from single pulse transient thermal impedance characteristics which are developed from empirical measurements. The latter is valid for the part mounted on printed circuit board - FR4, size 1" x 1" x 0.062" , double sided with 2 oz. copper, 100 % on both sides. The part ca pabilities can widely vary depending on actual application parameters and operating conditions. 0.1 0.01 0.2 Duty Cycle = 0.5 Square Wave Pulse Duration (s) Normalized Effective Transient Thermal Impedance Single Pulse 0.1 10-3 10-2 110-110-4 0.02 0.05 RTQ020N05TR www.VBsemi.com g A ll data sheet.com
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