RTP315N10F7 STMICROELECTRONICS | Alldatasheet

Document overview

  • Manufacturer or author: Provided By ALLDATASHEET.COM(FREE DATASHEET DOWNLOAD SITE)
  • PDF pages: 13

Technical content

Datasheet sections

  • 1 Electrical ratings
  • 2 Electrical characteristics
  • 2.1 Electrical characteristics (curves)
  • 3 Test circuits
  • 4 Package mechanical data
  • 5 Revision history

Features

  • Intended for use in aerospace and defense

applications

  • Dedicated traceability and part marking
  • Production parts approval documents available
  • Adapted extended life time and obsolescence management
  • Extended product change notification process
  • Designed and manufactured to meet sub ppm quality goals
  • Extended screening capability on request
  • Ultra low on-resistance
  • 100% avalanche tested
  • Switching applications

Description

This N-channel Power MOSFET utilizes the STripFET™ F7 technology with enhanced trench- gate structure that result in very low on-state resistance while also reducing internal capacitances and gate charge for faster and very efficient switching. TAB TO-220 $0Y 7$% Order code VDS RDS(on) max. I D RTP315N10F7 100 V 2.7 m Ω 180 A Table 1. Device summary

1 Electrical ratings

Table 2. Absolute maximum ratings

  1. Current limited by package.
  2. Pulse width limited by safe operating area.
  3. Starting T J=25°C, ID=60 A, VDD=50 V

Table 3. Thermal data

2 Electrical characteristics

(TCASE = 25 °C unless otherwise specified). Table 4. On/off states Table 5. Dynamic Table 6. Switching times

Table 7. Source drain diode

  1. Pulse width limited by safe operating area.
  2. Pulse duration = 300µs, duty cycle 1.5%

2.1 Electrical characteristics (curves)

Figure 2. Safe operating area Figure 3. Thermal impedance Figure 4. Output characteristics Figure 5. Transfer characteristics Figure 6. Gate charge vs gate-source voltage Figure 7. Static drain-source on-resistance

0 Qg(nC)

2.45 VGS=10V

Figure 8. Capacitance variations Figure 9. Source-drain diode forward Figure 10. Normalized gate threshold voltage vs Figure 11. Normalized on-resistance vs Figure 12. Normalized V(BR)DSS vs temperature

0 TJ(°C)

3 Test circuits

Figure 13. Switching times test circuit for Figure 14. Gate charge test circuit Figure 15. Test circuit for inductive load Figure 16. Unclamped inductive load test circuit Figure 17. Unclamped inductive waveform Figure 18. Switching time waveform

4 Package mechanical data

In order to meet environmental requirements, ST offers these devices in different grades of ECOPACK® packages, depending on their level of environmental compliance. ECOPACK® specifications, grade definitions and product status are available at: www.st.com. ECOPACK® is an ST trademark.

Figure 19. TO-220 type A drawing

Table 8. TO-220 type A mechanical data

5 Revision history

Table 9. Document revision history 26-Sep-2014 1 Initial version.