RTM2302 SIRECT | Alldatasheet

Document overview

  • Manufacturer or author: Provided By ALLDATASHEET.COM(FREE DATASHEET DOWNLOAD SITE)
  • PDF pages: 4

Technical content

Features

— Advanced trench process technology — High density cell design for ultra low on-resistance — Excellent thermal and electrical capabilities — Compact and low profile SOT-23 package Block Diagram

Ordering Information

Part No. Packing Package RTM2302CX Tape & Reel SOT-23 Absolute Maximum Rating (Ta = 25℃ unless otherwise noted) Parameter Symbol Limit Unit Drain-Source Voltage V DS 20V V Gate-Source Voltage V GS ± 8 V Continuous Drain Current I D 2.4 A Pulsed Drain Current I DM 10 A Ta = 25 oC 1.25 Maximum Power Dissipation Ta = 75 oC PD 0.8 W Operating Junction Temperature T J +150 oC Operating Junction and Storage Temperature Range T J, TSTG - 55 to +150 oC Thermal Performance Parameter Symbol Limit Unit Lead Temperature (1/8” from case) T L 5 S Junction to Ambient Thermal Resistance (PCB mounted) R θja 100 oC/W Note: Surface mounted on FR4 board t<=5sec. E L E C T R O N I C RTM2302

http:// www.sirectsemi.com

Electrical Characteristics

Rate ID = 2.4A, (Ta = 25 oC unless otherwise noted) Parameter Conditions Symbol Min Typ Max Unit Static Drain-Source Breakdown Voltage V GS = 0V, ID = 250uA BV DSS 20 -- -- V Drain-Source On-State Resistance V GS = 4.5V, ID = 3.6A R DS(ON) -- 50 65 Drain-Source On-State Resistance V GS = 2.5V, ID = 3.1A R DS(ON) -- 75 95 mΩ Gate Threshold Voltage V DS = VGS, ID = 250uA V GS(TH) 0.45 -- -- V Zero Gate Voltage Drain Current V DS = 20V, VGS = 0V I DSS -- -- 1.0 uA Gate Body Leakage V GS = ± 8V, VDS = 0V I GSS -- -- ± 100 nA On-State Drain Current V DS ≧ 5V, V GS = 4.5V I D(ON) 6 -- -- A Forward Transconductance V DS = 5V, ID = 3.6A g fs -- 10 -- S Dynamic Total Gate Charge Q g -- 5.2 10 Gate-Source Charge Q gs -- 0.65 -- Gate-Drain Charge VDS = 10V, ID = 3.6A, VGS = 4.5V Qgd -- 1.5 -- nC Turn-On Delay Time t d(on) -- 7 15 Turn-On Rise Time t r -- 55 80 Turn-Off Delay Time t d(off) -- 16 60 Turn-Off Fall Time VDD = 10V, RL = 10Ω, ID = 1A, VGEN = 4.5V, RG = 6Ω tf -- 10 25 nS Input Capacitance C iss -- 450 -- Output Capacitance C oss -- 70 -- Reverse Transfer Capacitance VDS = 10V, VGS = 0V, f = 1.0MHz Crss -- 43 -- pF Source-Drain Diode Max. Diode Forward Current I S -- -- 1.6 A Diode Forward Voltage I S = 1.0A, VGS = 0V V SD -- 0.75 1.2 V Note : pulse test: pulse width <=300uS, duty cycle <=2% RTM2302

http:// www.sirectsemi.com Typical Characteristics Curve (Ta = 25 oC unless otherwise noted) RTM2302

http:// www.sirectsemi.com Typical Characteristics Curve (Ta = 25 oC unless otherwise noted) SOT-23 Mechanical Drawing D C A E B G F SOT-23 DIMENSION MILLIMETERS INCHES DIM MIN MAX MIN MAX A 2.88 2.91 0.113 0.115 B 0.39 0.42 0.015 0.017 C 1.78 2.03 0.070 0.080 D 0.51 0.61 0.020 0.024 E 1.59 1.66 0.063 0.065 F 1.04 1.08 0.041 0.043 G 0.07 0.09 0.003 0.004 RTM2302 Sirectifier Global Corp., Delaware, U.S.A. China: st@sirectsemi.com … Thailand: th@sirectsemi.com Philippines: aiac@sirectsemi.com Belize: belize@sirectsemi.com