RT290-20

RT290-20 MARKTECH | Alldatasheet

Document overview

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Technical content

Subject to change without notice. www.cree.com

FEATURES

Thin 95 μm Chip Reduced Forward Voltage

3.2 V Typical at 20 mA

460nm - 3.8-11.1 mW 470nm - 3.4-10.4 mW 505nm - 2.0-6.5 mW 527nm - 1.7-6.0 mW Single Wire Bond Structure Class 2 ESD Rating

APPLICATIONS

Cellular Phone LCD Backlighting Digital Camera Flash For Mobile Appliances Automotive Dashboard Lighting LED Video Displays Audio Product Display Lighting RazerThin® LEDs CxxxRT290-S0200 Cree’s RazerThin LEDs are a new generation of solid-state LED emitters that combine highly efficient InGaN materials with Cree’s proprietary G•SiC® substrate to deliver superior price/performance for high-intensity blue and green LEDs. These vertically structured LED chips are approximately 95 microns in height and require a low forward voltage. Cree’s RazerThin series chips have the ability to withstand 1000V ESD. Applications for RazerThin LEDs include next-generation keypad backlighting where sub-miniaturization and thinner form factors are required. D atasheet: CPR3CL, Rev. B CxxxRT290-S0200 Chip Diagram Top View Bottom View G•SiC LED Chip 270 x 270 μm SiC Substrate h = 95 μm Backside MetallizationGold Bond Pad 110 μm Diameter Die Cross Section Cathode (-) Anode (+) Mesa (junction) 246 x 246 μm InGaN

Copyright © 2005-2006 Cree, Inc. All rights reserved. The information in this document is subject to change without notice. Cree, the Cree logo, G•SiC and RazerThin are registered trademarks of Cree, Inc. CPR3CL Rev. B Cree, Inc.

4600 Silicon Drive

Durham, NC 27703 USA Tel: +1.919.313.5300 www.cree.com Maximum Ratings at TA = 25°C Notes &3 CxxxRT290-S0200 DC Forward Current 30 mA Peak Forward Current (1/10 duty cycle @ 1kHz) 100 mA LED Junction Temperature 125°C Reverse Voltage 5 V Operating Temperature Range -40°C to +100°C Storage Temperature Range -40°C to +100°C Electrostatic Discharge Threshold (HBM) Note 2 1000 V Electrostatic Discharge Classification (MIL-STD-883E) Note 2 Class 2 Typical Electrical/Optical Characteristics at TA = 25°C, If = 20 mA Note 3 Part Number Forward Voltage (Vf, V) Reverse Current [I(Vr=5V), μA] Min. Typ. Max. Max. C460RT290-S0200 2.7 3.2 3.7 1 C470RT290-S0200 2.7 3.2 3.7 1 C505RT290-S0200 2.7 3.2 3.7 1 C527RT290-S0200 2.7 3.2 3.7 1 Mechanical Specifications CxxxRT290-S0200 Description Dimension Tolerance P-N Junction Area (μm) 246 x 246 ± 25 Top Area (μm) 270 x 270 ± 25 Bottom Area (μm) 270 x 270 ± 25 Chip Thickness (μm) 95 ± 15 Au Bond Pad Diameter (μm) 110 ± 20 Au Bond Pad Thickness (μm) 1.2 ± 0.5 Back Contact Metal Width (μm) 20 ± 10 Notes: Maximum ratings are package dependent. The above ratings were determined using a T-1 3/4 package (with Hysol OS4000 epoxy) for characterization. Seller makes no representations regarding ratings for packages other than the T-1 3/4 package used by Seller. The forward currents (DC and Peak) are not limited by the G•SiC die but by the effect of the LED junction temperature on the package. The junction temperature limit of 125°C is a limit of the T-1 3/4 package; junction temperature should be characterized in a specific package to determine limitations. Assembly processing temperature must not exceed 325°C (< 5 seconds). Product resistance to electrostatic discharge (ESD) is measured by simulating ESD using a rapid avalanche energy test (RAET). The RAET procedures are designed to approximate the maximum ESD ratings shown. Seller gives no other assurances regarding the ability of Products to withstand ESD. All products conform to the listed minimum and maximum specifications for electrical and optical characteristics when assembled and operated at 20 mA within the maximum ratings shown above. Efficiency decreases at higher currents. Typical values given are the average values expected by Seller in large quantities and are provided for information only. Seller gives no assurances products shipped will exhibit such typical ratings. All measurements were made using lamps in T-1 3/4 packages (with Hysol OS4000 epoxy). Dominant wavelength measurements taken using Illuminance E. Specifications are subject to change without notice.

Copyright © 2005-2006 Cree, Inc. All rights reserved. The information in this document is subject to change without notice. Cree, the Cree logo, G•SiC and RazerThin are registered trademarks of Cree, Inc. CPR3CL Rev. B Cree, Inc. Durham, NC 27703 USA Tel: +1.919.313.5300 www.cree.com Standard Bins for CxxxRT290-S0200 All LED chips are sorted onto die sheets according to the bins shown below. All dominant wavelength and radiant flux values are specified at If = 20 mA. C460RT290-S0200 C460RT290-0205 C460RT290-0206 C460RT290-0207 C460RT290-0208 C460RT290-0201 C460RT290-0202 C460RT290-0203 C460RT290-0204 455 nm 457.5 nm 460 nm 462.5 nm 465 nm 11.1 mW 7.2 mW 3.8 mW Dominant Wavelength Radiant Flux C470RT290-S0200 C470RT290-0205 C470RT290-0206 C470RT290-0207 C470RT290-0208 C470RT290-0201 C470RT290-0202 C470RT290-0203 C470RT290-0204 465 nm 467.5 nm 470 nm 472.5 nm 475 nm 10.4 mW 6.7 mW 3.4 mW Dominant Wavelength Radiant Flux C527RT290-S0200 C527RT290-0204 C527RT290-0205 C527RT290-0206 C527RT290-0201 C527RT290-0202 C527RT290-0203 520 nm 525 nm 530 nm 535 nm 6.0 mW 3.5 mW 1.7 mW Dominant Wavelength Radiant Flux C505RT290-S0200 C505RT290-0203 C505RT290-0204 C505RT290-0201 C505RT290-0202 500 nm 505 nm 510 nm 6.5 mW 4.0 mW 2.0 mW Dominant Wavelength Radiant Flux

Copyright © 2005-2006 Cree, Inc. All rights reserved. The information in this document is subject to change without notice. Cree, the Cree logo, G•SiC and RazerThin are registered trademarks of Cree, Inc. CPR3CL Rev. B Cree, Inc. Durham, NC 27703 USA Tel: +1.919.313.5300 www.cree.com Characteristic Curves These are representative measurements for the RazerThin products. Actual curves will vary slightly for the various radiant flux and dominant wavelength bins. Forward Current vs. Forward Voltage Vf (V) If (mA) Wavelength Shift vs Forward Current -4.00 -2.00 0.00 2.00 4.00 6.00 8.00 10.00 12.00 0 5 10 15 20 25 30 If (mA) Shift (nm) 460nm 527nm 505nm Relative Intensity vs Peak Wavelength Relative Intensity (%) Wavelength (nm) 400 500 600 100 Relative Intensity vs Forward Current 100 120 140 0 5 10 15 20 25 30 If(mA) % Intensity