RSQ015P10TR VBSEMI | Alldatasheet

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Technical content

P-Channel 100-V (D-S) MOSFET

FEATURES

  • Halogen-free According to IEC 61249-2-2 Available  TrenchFET® Power MOSFET

APPLICATIONS

 Load Switch PRODUCT SUMMARY VDS (V) RDS(on) (Ω) ID (A)a Qg (Typ.) - 100 0.200 at VGS = - 10 V - 4.1 5.1 nC 0.252 at VGS = - 4.5 V - 3.1 Notes: a. Based on T C = 25 °C. b. Surface Mounted on 1" x 1" FR4 boa rd. t = 5 s. d. Maximum under Steady State conditions is 110 °C/W. ABSOLUTE MAXIMUM RATINGS TA = 25 °C, unle ss otherwise noted Parameter Symbol Limit Unit Drain-Source Voltage VDS - 100 VGate-Source Voltage VGS ± 20 Continuous Drain Current (TJ = 150 °C) TC = 25 °C ID - 4.1 A TC = 70 °C - 3.1 TA = 25 °C - 4.1b, c TA = 70 °C - 3.3b, c Pulsed Drain Current IDM - 20 Continuous Source-Drain Diode Current TC = 25 °C IS - 2.5 TA = 25 °C - 1.67b, c Maximum Powe r Dissipation TC = 25 °C PD 3.0 WTC = 70 °C 2.0 TA = 25 °C 2.0b, c TA = 70 °C 1.3b, c Operating Junction and Stor age Temperature Range TJ, Tstg - 55 to 150 °C THERMAL RESISTANCE RATINGS Parameter Symbol Typical Maxim um Unit Maximum Junction-to-Ambientb, d t ≤ 5 s RthJA 55 62.5 °C/W Maximum Junction-to-Foot (Dr ain) Steady State RthJF 34 41 TSOP-6 Top View 2.85 mm 3 mm (4) S (3) G (1, 2, 5, 6) D P-Channel MOSFET RSQ015P10TR www.VBsemi.com g A ll data sheet.com

Notes: a. Pulse test; pulse w idth ≤ 300 µs, duty cycle ≤ 2 % b. Guaranteed by design, not subject to production testing. Stresses beyond those listed under “Ab solute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only, and functional operation of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum rating conditions for extended periods may affect device reliability. SPECIFICATIONS TJ = 25 °C, unless ot herwise noted Parameter Symbol Test Cond itions Min. Typ. Max. Unit Static Drain-Source Breakdown Voltage VDS VGS = 0 V, ID = - 250 µA - 100 V VDS Temperature Coefficient ΔVDS/TJ ID = - 250 µA - 31 mV/°CVGS(th) Temperature Coefficient ΔVGS(th)/TJ 4.5 Gate-Source Threshold Voltage VGS(th) VDS = VGS, ID = - 250 µA - 1.0 - 3.0 V Gate-Source Leakage IGSS VDS = 0 V, VGS = ± 20 V ± 100 nA Zero Gate Voltage Drain Current IDSS VDS = - 30 V, VGS = 0 V - 1 µAVDS = - 30 V, VGS = 0 V, TJ = 55 °C - 10 On-State Drain Currenta ID(on) VDS ≤ - 5 V, VGS = - 10 V - 20 A Drain-Source On-State Resistancea RDS(on) VGS = - 10 V, ID = - 4.1 A 0.200 ΩVGS = - 4.5 V, ID = - 1.0 A 0.252 Forward Transconductancea gfs VDS = - 15 V, ID = - 4.1 A 8S Dynamicb Input Capacitance Ciss VDS = - 15 V, VGS = 0 V, f = 1 MHz 450 pFOutput Capacitance Coss 80 Reverse Transfer Capacitance Crss 63 Total Gate Charge Qg VDS = - 15 V, VGS = - 10 V, ID = - 4.1 A 10 15 nCVDS = - 15 V, VGS = - 4.5 V, ID = - 4.1 A 5.1 8 Gate-Source Charge Qgs 1.8 Gate-Drain Charge Qgd 2.5 Gate Resistance Rg f = 1 MHz 7 Ω Tur n-On D elay Time td(on) VDD = - 15 V, RL = 4.6 Ω ID ≅ - 3.3 A, VGEN = - 4.5 V, Rg = 1 Ω 40 60 ns Rise Time tr 80 120 Turn-Off Delay Time td(off) 20 30 Fall Time tf 12 20 Tur n-On D elay Time td(on) VDD = - 15 V, RL = 4.6 Ω ID ≅ - 3.3 A, VGEN = - 10 V, Rg = 1 Ω 51 0 Rise Time tr 13 20 Turn-Off Delay Time td(off) 20 30 Fall Time tf 10 15 Drain-Source Body Diode Characteristics Continuous Source-Drain Diode Current IS TC = 25 °C - 2.5 A Pulse Diode Forward C urrenta ISM - 20 Body Diode Voltage VSD IS = - 3.3 A - 0.8 - 1.2 V Body Diode Reverse Recov ery Time trr IF = - 3.3 A, di/dt = 100 A/µs , TJ = 25 °C 20 30 ns Body Diode Reverse Recover y Charge Qrr 20 30 nC Reverse Recove ry Fall Time ta 14 ns Reverse Recovery Rise T ime tb 6 RSQ015P10TR www.VBsemi.com g A ll data sheet.com

TYPICAL CHARACTERISTICS 25 ° C, unless otherwise noted Output Characteristics On-Resistance vs. D rain Current and Gate Voltage Gate Charge VDS - Drain-to-Source Voltage (V) ID - Drain Current (A) VGS = 10 thru 5 V VGS = 3 V VGS = 4 V VGS = 2 V 0.00 0.04 0.08 0.12 0.16 0.20 048 12 16 20 - On-Resistance (Ω)RDS(on) ID - Drain Current (A) VGS = 10 V VGS = 4.5 V 02468 10 12 ID = 4.1 A - Gate-to-Source Voltage (V) Qg - Total Gate Charge (nC) VGS VDS = 24 V VDS = 15 V Transfer Characteristics Capacitance On-Resis tance vs. Junction Temperature 012 34 VGS - Gate-to-Source Voltage (V) ID - Drain Current (A) TC = 125 °C TC = 25 °C TC = - 55 °C Crss 200 400 600 800 0 5 10 15 20 25 30 Ciss VDS - Drain-to-Source Voltage (V) C - Capacitance (pF) Coss 0.6 0.8 1.0 1.2 1.4 1.6 - 50 - 25 0 25 50 75 100 125 150 TJ - Junction Temperature (°C) (Normalized) - On-ResistanceRDS(on) VGS = 10 V, ID = 4.1 V VGS = 4.5 V, ID = 4.1 A RSQ015P10TR www.VBsemi.com g A ll data sheet.com

TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted Source-Drain Diode F orward Voltage Threshold Voltage 1.2 1.4 TJ = 150 °C VSD - Source-to-Drain Voltage (V) IS - Source Current (A) 100 TJ = 25 °C 1.2 1.4 1.6 1.8 2.0 2.2 - 50 - 25 0 25 50 75 100 125 150 ID = 250 µA V (V)GS(th) TJ - Temperature (°C) On-Resistance vs. Gate-to-Source Volt age Single Pulse Power 0.00 0.05 0.10 0.15 0.20 0.25 02468 10 - On-Resistance (Ω)RDS(on) VGS - Gate-to-Source Voltage (V) TJ = 25 °C TJ = 125 °C ID = 4.1 A Power ( W) Time (s) 10 10000.10.010.001 1001 Safe Operating Area VDS - Drain-to-Source Voltage (V) * VGS minimum VGS at which RDS(on) is specified 100 0.1 1 10 100 0.01 ID - Drain Current (A) 0.1 TA = 25 °C Single Pulse 1 ms 10 ms Limited by RDS(on)* BVDSS Limited 100 µs 100 ms DC 1s, 10 s RSQ015P10TR www.VBsemi.com g A ll data sheet.com

TYPICAL CHARACTERISTICS 25 ° C, unless otherwise noted * The power dissipat ion PD is based on T J(max) = 150 °C, using junction-to-case th ermal resistance, and is more useful in settling the upper dissipation limit for cases where additional heatsinking is used. It is used to determine the current rating, when this rating falls below the package limit. Current Derating* 0 25 50 75 100 125 150 TC - Case Temperature (°C) ID - Drain Current (A) Power, Junct ion-to-Foot 25 50 75 100 125 150 TC - Case Temperature (°C) Power (W) RSQ015P10TR www.VBsemi.com g A ll data sheet.com

TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted Normalized Thermal Transient Impedance, Junction-to-Ambient 10-3 10-2 1 10 100010-110-4 100 0.2 0.1 0.05 Square WaveP ulse Duration (s) Normalized Effective Transient Thermal I mpedance 0.1 0.01 Notes: PDM 1. Duty Cycle, D 2. Per Unit Base = RthJA = 90 °C/W TJM - TA =P DMZthJA(t) 4. Surfa ce Mounted Duty Cycle = 0.5 0.02 Single Pulse Normalized Therm al Transient Impedance, Junction-to-Foot 10-3 10-2 0 1110-110-4 0.2 0.1 Duty Cycle = 0 Square WaveP ulse Duration (s) Normalized Effective Transient Thermal Impedance 0.1 0.01 Single Pulse 0.02 0.05 RSQ015P10TR www.VBsemi.com g A ll data sheet.com

L 5 4 R R C 0.15 M B A b C 0.08

0.17 Ref

-C- Seating Plane A 1 A 2 A -A- D -B- E 1 E L 2 (L 1 ) c 4x 1 4x 1 e 2 3 6 5 4 C 0.15 M B A b -B- E 1 E e 5-LEAD TSOP 6-LEAD TSOP TSOP: 5/6−LEAD JEDEC Part Number: MO-193C MILLIMETERS INCHES Dim Min Nom Max Min Nom Max A 0.91 - 1.10 0.036 - 0.043 A 1 0.01 - 0.10 0.0004 - 0.004 e 0.95 BSC 0.0374 BSC L 0.32 - 0.50 0.012 - 0.020 L 1 0.60 Ref 0.024 Ref L 2 0.25 BSC 0.010 BSC 0 4 8 0 4 8 1 7 Nom 7 Nom ECN: C-06593-Rev. I, 18-Dec-06 DWG: 5540 RSQ015P10TR www.VBsemi.com g A ll data sheet.com

0.119 (3.023) Recommended Minimum Pads Dimensions in Inches/(mm) 0.099 (2.510) 0.064 (1.626) 0.028 (0.699) 0.039 (1.001) 0.020 (0.508) 0.019 (0.493) Return to Index RSQ015P10TR www.VBsemi.com g A ll data sheet.com

ducts due to improve reliability, function or design or for other reasons, product specifications and data a re subject to change without notice. Taiwa n VBsemi Electronics Co., Ltd., branches, agents, employees, and all persons acting on its or their repres entatives (collectively, the "Taiwan VBsemi"), assumes no responsibility for any errors, inaccuracies or incom plete data contained in the table or any other any disclosure of any information related to the product.(www.VBsemi.com) Taiwa n VBsemi makes no guarantee, representation or warranty on the product for any particular purpose of any go ods or continuous production. To the maximum extent permitted by applicable law on Taiwan VBsemi relin quished: (1) any application and all liability arising out of or use of any products; (2) any and all liability, inclu ding but not limited to special, consequential damages or incidental ; (3) any and all implied warranties, inclu ding a particular purpose, non-infringement and merchantability guarantee. State ment on certain types of applications are based on knowledge of the product is often used in a typical appli cation of the general product VBsemi Taiwan demand that the Taiwan VBsemi of. Statement on whether the produc t is suitable for a particular application is non-binding. It is the customer's responsibility to verify specific produc t features in the products described in the specification is appropriate for use in a particular application. Parame ter data sheets and technical specifications can be provided may vary depending on the application and perform ance over time. All operating parameters, including typical parameters must be made by customer's techn ical experts validated for each customer application. Product specifications do not expand or modify Taiwan VBsemi purchasing terms and conditions, including but not limited to warranty herein. Unles s expressly stated in writing, Taiwan VBsemi products are not intended for use in medical, life saving, or lif e sustaining applications or any other application. Wherein VBsemi product failure could lead to personal injury or death, use or sale of products used in Taiwan VBsemi such applications using client did not express their own ris k. Contact your authorized Taiwan VBsemi people who are related to product design applications and other terms and conditions in writing. The in formation provided in this document and the company's products without a license, express or implied, by est oppel or otherwise, to any intellectual property rights granted to the VBsemi act or document. Product names and trademarks referred to herein are trademarks of their respective representatives will be all. Materi alCategoryPolicy Taiwa n VBsemi Electronics Co., Ltd., hereby certify that all of the products are determined to be RoHS c ompliant and meets the definition of restrictions under Directive of the European Parliament 2011/ 65 / EU, 2011 Nian. 6. 8 Ri Yue restrict the use of certain hazardous substances in electrical and electr onicequipment(EEE)-modification,unlessotherwisespecifiedasinconsistent.(www.VBsemi.com) Pleas enotethatsomedocumentsmaystillrefertoTaiwanVBsemiRoHSDirective2002/95/EC.We confir m that all products identified as consistent with the Directive 2002/95 / EC European Directive 2011/ 65/. Taiwa n VBsemi Electronics Co., Ltd. hereby certify that all of its products comply identified as halog en-free halogen-free standards required by the JEDEC JS709A. Please note that some Taiwanese VBsem i documents still refer to the definition of IEC 61249-2-21, and we are sure that all products confor mtoconfirmcompliancewithIEC61249-2-21standardlevelJS709A. RSQ015P10TR www.VBsemi.com A ll data sheet.com