RSQ015N06TR VBSEMI | Alldatasheet
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Technical content
N-Channel 60 V (D-S) MOSFET
FEATURES
- TrenchFET® power MOSFET
- 100 % Rg and UIS tested Notes a. Pulse test; pulse width 300 μs, duty cycle 2 %. b. When mounted on 1" square PCB (FR-4 material). PRODUCT SUMMARY VDS (V) 60 RDS(on) () at VGS = 10 V 0.030 RDS(on) () at VGS = 4.5 V 0.035 ID (A) 7 Configuration Single ABSOLUTE MAXIMUM RATINGS (TC = 25 °C, unless otherwise noted) PARAMETER SYMBOL LIMIT UNIT Drain-Source Voltage VDS 60 V Gate-Source Voltage VGS ± 20 Continuous Drain Current TC = 25 °C ID A TC = 125 °C 4 Continuous Source Current (Diode Conduction) IS 6 Pulsed Drain Current a IDM 29 Single Pulse Avalanche Current L = 0.1 mH IAS 10 Single Pulse Avalanche Energy EAS 5m J Maximum Power Dissipation a TC = 25 °C PD W TC = 125 °C 1.6 Operating Junction and Storage Temperature Range TJ, Tstg - 55 to +175 °C THERMAL RESISTANCE RATINGS PARAMETER SYMBOL LIMIT UNIT Junction-to-Ambient PCB Mount b RthJA 110 °C/W Junction-to-Foot (Drain) RthJF 30 RSQ015N06TR www.VBsemi.com Top View D D G D D S TSOP-6 g A ll data sheet.com
a. Pulse test; pulse width 300 μs, duty cycle 2 %. b. Guaranteed by design, not subj ect to production testing. c. Independent of operating temperatur e. Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings on ly, and functional operation of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum rating conditions for extended periods may affect device reliability. SPECIFICATIONS (TC = 25 °C, unless otherwise noted) PARAMETER SYMBOL TEST CONDITIONS MIN. TYP. MAX. UNIT Static Drain-Source Breakdown Voltage VDS VGS = 0, ID = 250 μA 60 - - V Gate-Source Threshold Voltage VGS(th) VDS = VGS, ID = 250 μA 1.0 - 2.5 Gate-Source Leakage IGSS VDS = 0 V, VGS = ± 12 V - - ± 500 nA VDS = 0 V, VGS = ± 20 V - - ± 1 mA Zero Gate Voltage Drain Current IDSS VGS = 0 V VDS = 60 V - - 1 μA VGS = 0 V V DS = 60 V, TJ = 125 °C - - 50 VGS = 0 V V DS = 60 V, TJ = 175 °C - - 150 On-State Drain Current a ID(on) VGS = 10 V VDS5 V 10 - - A Drain-Source On-State Resistance a RDS(on) VGS = 10 V ID = 5 A - 0.030 - VGS = 10 V ID = 5 A, TJ = 125 °C - 0.050 - VGS = 10 V I D = 5 A, TJ = 175 °C - 0.070 - VGS = 4.5 V ID = 4 A - 0.035 - Forward Transconductance a gfs VDS = 15 V, ID = 4 A - 12 - S Dynamic b Input Capacitance Ciss VGS = 0 V V DS = 30 V, f = 1 MHz - 560 700 pF Output Capacitance Coss -8 5 1 0 5 Reverse Transfer Capacitance Crss -5 5 7 0 Total Gate Charge c Qg VGS = 4.5 V V DS = 30 V, ID = 4 A -7 . 6 1 2 nC Gate-Source Charge c Qgs -2 . 1- Gate-Drain Charge c Qgd -4 . 1- Gate Resistance Rg f = 1 MHz 1.2 2.4 3.6 Turn-On Delay Time c td(on) VDD = 30 V, RL = 7.5 ID 4 A, VGEN = 10 V, Rg = 1 -9 1 4 ns Rise Time c tr -1 2 1 8 Turn-Off Delay Time c td(off) -1 9 2 9 Fall Time c tf -7 1 1 Source-Drain Diode Ratings and Characteristics b Pulsed Current a ISM -- 2 9 A Forward Voltage VSD IF = 1.6 A, VGS = 0 - 0.75 1.2 V RSQ015N06TR www.VBsemi.com g A ll data sheet.com
TYPICAL CHARACTERISTICS (TA = 25 °C, unless otherwise noted) Output Characteristics Transconductance Capacitance Transfer Characteristics On-Resistance vs. D rain Current Gate Charge 0 1234 5 VGS =1 0Vt h r u5V VGS =4V VDS - Drain-to-Source Voltage (V) - Drain Current (A)I D VGS = 3 V - Transconductance (S)gfs - Drain Current (A)I D 02 468 1 0 TC = 125 °C TC = - 55 °C TC = 25 °C 0 1 02 03 04 05 06 0 200 400 600 800 1000 VDS - Drain-to-Source Voltage (V) C - Capacitance (pF) Coss Crss Ciss 012345 TC = 25 °C TC = 125 °C TC = - 55 °C VGS - Gate-to-Source Voltage (V) - Drain Current (A)I D 0.00 0.03 0.06 0.09 0.12 0.15 03 69 1 2 1 5 VGS =1 0V VGS =4 . 5V - On-Resistance (Ω)RDS(on) ID - Drain Current (A) 0 4 8 1 21 62 0 VGS - Gate-to-Source Voltage (V) Qg - Total Gate Charge (nC) VDS = 30 V ID = 4 A RSQ015N06TR www.VBsemi.com g A ll data sheet.com
TYPICAL CHARACTERISTICS (TA = 25 °C, unless otherwise noted) Gate Current vs. Gate-Source Voltage On-Resistance vs. Junction Temperature On-Resistance vs. Gate-Source Voltage Source-Drai n Diode Forward Voltage Threshold Voltage Drain-Source Breakdown vs. Junction Temperature VGS - Gate-to-Source Voltage (V) - Gate Current (A)IGSS 10-8 10-6 10-4 10-2 10-10 0 6 12 18 24 30 TJ = 25 °C TJ = 150 °C 0.6 0.9 1.2 1.5 1.8 2.1 - 50 - 25 0 25 50 75 100 125 150 175 ID =3 . 2A VGS =1 0V TJ - Junction Temperature (°C) (Normalized)- On-ResistanceRDS(on) 0.00 0.04 0.08 0.12 0.16 0.20 012 3456789 1 0 TJ = 25 °C TJ = 150 °C - On-Resistance (Ω)RDS(on) VGS - Gate-to-Source Voltage (V) 0.01 0.001 0.1 100 TJ = 25 °C TJ = 150 °C VSD - Source-to-Drain Voltage (V) - Source Current (A)I S - 1.2 - 0.9 - 0.6 - 0.3 0.0 0.3 0.6 - 50 - 25 0 25 50 75 100 125 150 175 ID = 250 µA ID =5m A Variance (V)VGS(th) TJ - Temperature (°C) VDS - Drain-to-Source Voltage (V) TJ - Junction Temperature (°C) - 50 - 25 0 25 50 75 100 125 150 175 ID =1m A RSQ015N06TR www.VBsemi.com g A ll data sheet.com
THERMAL RATINGS (TA = 25 °C, unless otherwise noted) Safe Operating Area Normalized thermal Transient Impedance, Juncti on-to-Ambient 0.01 0.01 0.1 1 10010 0.1 VDS - Drain-to-Source Voltage (V) * VGS > minimum VGS at which RDS(on) is specified ID - Drain Current (A) Limited by RDS(on)* BVDSS Limited 1 ms 10 ms 1 s, 10 s, DC 100 ms 100 μs IDM Limited TC = 25 °C Single Pulse 10-3 10-2 1 10 100010-110-4 100 0.2 0.1 0.05 Square Wave Pulse Duration (s) Normalized Effective Transient Thermal Impedance 0.1 0.01 Single Pulse Notes: PDM 1. Duty Cycle, D = 2. Per Unit Base = RthJA = 110 °C/W 3. TJM -T A =P DMZthJA(t) 4. Surface Mounted Duty Cycle = 0.5 0.02 RSQ015N06TR www.VBsemi.com g A ll data sheet.com
THERMAL RATINGS (TA = 25 °C, unless otherwise noted) Normalized thermal Transient Impedance, Junction-to-Foot Note
- The cha racteristics shown in the two graphs - Normalized Transient Thermal Impedance Junction to Ambient (25 °C) - Normalized Transient Thermal Impedance Junction to Foot (25 °C) are given for general guidelines only to enable the user to get a “ball park” indication of part capabilities. The data are extracted from single pulse transient thermal impedance characteristics which are developed from empirical measurements. The latter is valid for the part mounted on printed circuit board - FR4, size 1" x 1" x 0.062" , double sided with 2 oz. copper, 100 % on both sides. The part ca pabilities can widely vary depending on actual application parameters and operating conditions. 0.1 0.01 0.2 Duty Cycle = 0.5 Square Wave Pulse Duration (s) Normalized Effective Transient Thermal Impedance Single Pulse 0.1 10-3 10-2 110-110-4 0.02 0.05 RSQ015N06TR www.VBsemi.com g A ll data sheet.com
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