RSM90N120T7 RECTRON | Alldatasheet
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Highblockingvoltagewithlow0n-resisatance Highspeedswitchingwithlowcapacitance Easytoconnectinparallelandtodrive B e n e f i t s Highersystemefficiency Reducedcoolingrequirements Increasepowerdensity Improvedsystemswitchingfrequency Application Switchingpowersupply Motordrives Highvoltageinverters Pulsedpowerapplications MaximumRatings（TC 25°Cunlessotherwisespecified ） Symbol Parameter Value Unit Testconditions Notes VDSmax Drain-sourcevoltage 1200 V VGS 0V,ID 100uA VGSmax Gate-sourcevoltage -10/+25 V Maximumvalues VGSop Gate-sourcevoltage -5/+20 V Recommendedvalues ID(DC) Continuousdraincurrent A VGS 20V,TC 25˚C
60 VGS 20V,TJ 100˚C
IDpulse Pulseddraincurrent 250 A PulsewidthtP limitedbyTjmax PD Powerdissipation 463 W TC 25˚C,TJ 150˚C TJ,Tstg OperationJunctionandStorage temperature -55/+175 °C Part Number Package Marking RSM90N120T7 TO-247-3 90N120 Package G D S 1200V 90A 25mΩ VDS ID@25℃ RDS(on) RSM90N120T7 2023-05/110 REV:A = = = = = = = =
ElectricalCharacteristics（TC 25°Cunlessotherwisespecified） Symbol Parameters Min. Typ. Max. Unit Testconditions V(BR)DSS Drain-sourceBreakdown voltage 1200 / / V VGS 0V,IDS 100µA VGS(th) Gatethresholdvoltage 1.9 2.4 / V VDS VGS,IDS 15mA, / 1.6 / VDS VGS,IDS 15mA,TJ 150℃ IDSS Drain-Sourceleakagecurrent / 1 100 µA VDS 1200V,VGS 0V IGSS Gate-sourceleakagecurrent / / 100 nA VGS 20V,VDS 0V, RDS(on) Drain-sourceon-stateresistance / 25 34 mΩ VGS 20V,ID 50A / 43 / VGS 20V,ID 50A,TJ 150℃ gfs Transconductance / 22.8 / S VDS 20V,ID 50A / 21.2 / VDS 20V,ID 50A,TJ 150℃ Ciss Inputcapacitance / 3600 / pF VGS 0VVDS 1000V f 1MHz VAC 25mVCoss Outputcapacitance / 240 / Crss Reversetransfercapacitance / 16 / Eoss CossStoredenergy / 122 / µJ EAS Singlepulseavalancheenergy / 3.5 / J ID 50A,VDD 50V EON Turn-onswitchingenergy / 1.8 / mJ VDS 800V,VGS -5/20V, ID 50A,RG(ext) 2.5Ω,L 412μHEOFF Turn-offswitchingenergy / 1.5 / td(on) Turn-ondelaytime / 16 / ns VDD 800V,VGS -5/20VID 50A, RG(ext) 2.5Ω,RL 16Ω tr Risetime / 16.2 / td(off) Turn-offdelaytime / 33 / tf Falltime / 7.8 / RG(int) Internalgateresistance 2 Ω f 1MHz,VAC 25mV,ESRof CISS Qgs Gate-sourcecharge 54 nC VDS 800V,VGS -5/20V ID 50AQgd Gate-draincharge 29 Qg Totalgatecharge 195 ReverseDiodecharacteristics（TC 25°C unlessotherwisespecified） Symbol Parameter Min. Typ. Max. Unit Testconditions Note VSD Forwardvoltage / 5.4 / V VGS -5V,IF 25A / 5.1 / V VGS -5V,IF 25A，TJ 150℃ IS Forwardcurrent / / 90 A TC 25℃ trr Reverserecoverytime / 55 / µS VDS 800V VGS -5V/20V IF 25A dif/dt 1000A/us Qrr Reverserecoverycharge / 220 / µC Irrm Peakreverserecoverycurrent / 6.7 / A = = = = = = = = = = = = = = = = = = = = = = = = = = = = = = = = = = = =
Figure1.TypicalOutput CharacteristicsTJ 25°C Figure2.TypicalOutputCharacteristics TJ 175°C Figure3.NormalizedOn-Resistance vs.Temperature Figure4.On-Resistancevs.Drain Current Figure5.On-Resistance vs.Temperature Figure6.TypicalTransferCharacteristics RATIN G AND CHARACTERISTI CS CURVES (RSM90N120T7)
Figure7.BodyDiodeCharacteristics at25°C Figure7.BodyDiodeCharacteristicsat 175°C Figure9.GateThresholdVoltage vs.Temperature Figure10.GateCharge Characteristic Figure11.3rd QuadrantCharacteristics at25°C Figure12.3rd QuadrantCharacteristicsat175°C RATIN G AND CHARACTERISTI CS CURVES (RSM90N120T7)
Figure13.Capactancesvs. Drain-SourceVoltage Figure14.Capactancesvs.Drain-Source Voltage Figure15.OutputCapacitorStoredEnergy RATIN G AND CHARACTERISTI CS CURVES (RSM90N120T7)
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