RSM5853P SIRECT | Alldatasheet
Document overview
- Manufacturer or author: Provided By ALLDATASHEET.COM(FREE DATASHEET DOWNLOAD SITE)
- PDF pages: 5
Technical content
http:// www.sirectsemi.com P-Channel 20Vol t (D-S) MOSFET With Schottky Diode □ Application -These miniature surface mount MOSFET utilize a high cell density trench process to provide low RDS(on) and to provide low RDS(on) and to ensure minimal power loss and heat dissipation. Typical applications are DC-DC converters and power management in portable and battery-powered products such as coputers, printers, PCMCIA cards, cellular and cordless telephones. □ Feature -Low RDS(on) provides higger efficiency and extends battery life -Low thermal impedance copper leadframe CF 1206-8 saves board space -Fast switching speed -High performance trench technology □ Absolute Maximum Ratings PARAMETER SYMBOL MAXIMUM UNIT Drain-Source Voltage (MOSFET) V DS -20 Reverse Voltage (Schottky) V KA 20 Gate-Source Voltage (MOSFET) V GS ±8 V TA = 25 ºC ±2.5 Continuous Drain Current @ TJ = 150ºC (MOSFET) (Note 1) TA = 70 ºC ID ±1.9 Pulsed Drain Current (MOSFET) (Note 2) I DM ±10 Continuous Source Current (MOSFET Diode Conduction) (Note 1) I S -1.6 Average Forward Current (Schottky) I F 0.5 Pulsed Forward Current (Schottky) I FM 8 A TA = 25 ºC 2.1 Maximum Power Dissipation (MOSFET) (Note 1) TA = 70 ºC 1.1 TA = 25 ºC 1.3 Maximum Power Dissipation (Schottky) (Note 1) TA = 70 ºC PD 0.68 W Operating Junction and Storage Temperature Range T J , TSTG -55 to +150 ºC t ≦ 5sec 60 Maximum Junction-to-Ambient Steady State RθJA 110 ºC/W Note: 1.Surface Mounted on 1” X 1” FR-4 Board September 2008 / Rev.6.2 2.Pulse width limited by maximum junction temperature A A S G K K D D CF 1206-8 TOP VIEW G D S A K E L E C T R O N I C RSM5853P
http:// www.sirectsemi.com □ MOSFET Specifications PARAMETER SYMBOL CONDITIONS MIN. TYP . MAX. UNIT STATIC Gate Threshold Voltage V GS(th) VDS = VGS, ID = -250μA -0.4 V Gate-Body Leakage I GSS VDS = 0V, VGS = ±8V ± 100 nA VDS = -16V, VGS = 0V -1 Zero Gate Voltage Drain Current I DSS VDS = -16V, VGS = 0V, TJ = 55ºC -10 μA On-State Drain Current (Note 1) I D(on) VDS = -5V, VGS = -4.5V -5 A VGS = -4.5V, ID = -3.6A 0.110 Drain-Source On-State Resistance (Note 1) RDS(on) Ω Forward Tranconductance (Note 1) gfs VDS = -5V, ID = -3.6A 3 S Diode Forward Voltage V SD IS = -1.6A, VGS = 0V -0.70 V DYNAMIC (Note 2) Total Gate Charge Q g 6.0 Gate-Source Charge Q gs 0.8 Gate-Drain Charge Q gd VDS = -5V, VGS = -4.5V, ID = -3.6A 1.3 nC Turn-On Delay Time Td (on) 6.5 Rise Time t r 20 Turn-Off Delay Times Td (off) 31 Fall Time t f VDD = -5V, RL = 5Ω, VGEN = -4.5V, RG = 6Ω nS □ Schottky Specifications PARAMETER SYMBOL CONDITIONS MIN. TYP . MAX. UNIT IF = 0.5A 0.48 Forward Voltage Drop V F IF = 0.5A, TJ = 125ºC 0.4 V Vr = 30V 0.1 Vr = 30V, TJ = 75ºC 1 Maximum Reverse Leakage Current Irm Vr = 30V, TJ = 125ºC 10 mA Junction Capacitance C T Vr = 10V 31 pF Note: 1. Pulse Test : PW≦300μs duty cycle≦2% 2.Guaranteed by design, not subject to production tesing RSM5853P
http:// www.sirectsemi.com A θ A1c D E L b e DIMENSIONS INCHES MM DIM MIN MAX MIN MAX NOTE A 0.027 0.036 0.70 0.90 A1 0.000 0.002 0.00 0.03 b 0.009 0.014 0.24 0.35 c 0.003 0.010 0.08 0.25 D 0.118 BSC 3.00 BSC E 0.079 BSC 2.00 BSC E1 0.067 BSC 1.70 BSC e 0.026 BSC 0.65 BSC L 0.008 0.016 0.20 0.40 L1 0.000 0.004 0.00 0.10 θ 0° 12° 0° 12° RSM5853P Sirectifier Global Corp., Delaware, U.S.A. China: st@sirectsemi.com … Thailand: th@sirectsemi.com Philippines: aiac@sirectsemi.com Belize: belize@sirectsemi.com