RSM36N120T7 RECTRON | Alldatasheet
Document overview
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Technical content
Features
High Blocking Voltage with LowOn-Resistance High Speed Switching with Low Capacitance Easy to connect in parallel and to Drive Benefits G D S H i g h e r S y s t e m E f f i c i e n c y Reduced Cooling Requirements Increased Power Density Increased System Switching Frequency
Applications
H i g h V o l t a g e D C D C C o n v e r t e r s Motor Drives Switch Mode Power Supplies Pulsed Power applications MaximumRatings(TC=25 o C unless otherwise specified) Symbol Parameter Value Unit Test Conditions Note VDSmax Drain-Source Voltage 1200 V VGS=0V, ID=100μA VGSmax Gate-Source Voltage -10/+25 V Absolute maximum values VGSop Gate-Source Voltage -5/+20 V Recommended operational values ID Continuous Drain Current A VGS=20V, Tc=25oC
24 VGS=20V, Tc=100oC
ID(pulse) Pulsed Drain Current TBD A Pulse width tp limited by TJmax PD Power Dissipation TBD W Tc=25oC, TJ=150oC TJ, TSTG Operating Junction and Storage Temperature -55 to +175 o C RSM36N120T7 PartNumber Package R S M N T T O Marking N 2023-05/110 REV:A Package VDS 1200V RDS(on) 80mΩ ID@25 o C 36A
C ElectricalCharacteristics(T =25 o C unless otherwise specified) Symbol Parameter Min. Typ. Max. Unit Test Conditions Note V(BR)DSS Drain-Source Breakdown Voltage 1200 V VGS=0V, ID=100μA VGS(th) Gate Threshold Voltage 2.0 2.4 4.0 V VDS=VGS, ID=5mA Fig. 11 1.8 o VDS=VGS, ID=5mA, TJ=150 C IDSS Zero Gate Voltage Drain Current 100 µA VDS=1200V, VGS=0V IGSS+ Gate-Source Leakage Current 10 250 nA VDS=0V, VGS=25V IGSS- Gate-Source Leakage Current 10 250 nA VDS=0V, VGS=-10V RDS(on) Drain-Source On-State Resistance 80 98 mΩ VGS=20V, ID=20A Fig. 4,5,6140 o VGS=20V, ID=20A, TJ=150 C Ciss Input Capacitance 1940 pF VGS=0V VDS=1000V f=1MHz VAC=25mV Fig. 15,16 Coss Output Capacitance 109 Crss Reverse Transfer Capacitance Eoss Coss Stored Energy 53 µJ EON Turn-On Switching Energy 550 µJ VDS=800V, VGS=-5V/20V ID=20A, RG(ext)=2.5Ω, L=200μHEOFF Turn-Off Switching Energy 270 td(on) Turn-On Delay Time 11 ns VDS=800V, VGS=-5V/20V, ID=20A RG(ext)=2.5Ω, RL=40Ω tr Rise Time td(off) Turn-Off Delay Time 18 tf Fall Time RG(int) Internal Gate Resistance 3.8 Ω f=1MHz, VAC=25mV QGS Gate to Source Charge 32 nC VDS=800V VGS=-5V/20V ID=20A QGD Gate to Drain Charge 24 QG Total Gate Charge 102 ReverseDiodeCharacteristics Symbol Parameter Typ. Max. Unit Test Conditions Note VSD Diode Forward Voltage 3.6 V VGS=-5V, ISD=10A Fig. 8,9,103.3 VGS=-5V, ISD=10A, TJ=150oC IS Continuous Diode Forward Current TBD A TC=25oC trr Reverse Recover Time 37 ns VR=800V, ISD=20A dif/dt=290A/μsQrr Reverse Recovery Charge 94 nC Irrm Peak Reverse Recovery Current 4 A ThermalCharacteristics Symbol Parameter Typ. Max. Unit Test Conditions Note RθJC Thermal Resistance from Junction to Case 0.6 o C/W RθJA Thermal Resistance from Junction to Ambient 40
WM1A080120K Version 2.1 Conditions: V 20V GS V 18V T -55 o C GS J tp<200s V 16V GS V GS 14V VGS 12V VGS 10V Conditions: I 20ADS V 20VGS tp<200s T 150 o C J T -55 o C J T 25 o C J OnResistance,R (mOhms) DS On Drain-SourceCurrent,I(A) DS DS DS 70 70 60 60 50 50 D r a i n S o u r c e V o l t a g e V V D r a i n S o u r c e V o l t a g e V V Figure1.OutputCharacteristicsTJ -55ºC Figure2.OutputCharacteristicsTJ 25ºC D r a i n S o u r c e V o l t a g e V (V) J u n c t i o n T e m p e r a t u r e T o C DS J Figure3.OutputCharacteristicsTJ 150ºC Figure4.NormalizedOn-Resistancevs.Temperature 250 250 200 200 150 150 100 100 50 50 D r a i n S o u r c e C u r r e n t I (A) J u n c t i o n T e m p e r a t u r e T o C DS J Figure5.On-Resistancevs.DrainCurrent Figure6.On-Resistancevs.Temperature ForVariousTemperatures ForVariousGateVoltage Conditions: V 20V GS T 25 o C V 18V J tp<200s GS V 16V GS V 14VGS V GS 12V V GS 10V Conditions: V 20V GS T 150 o C V 18V J tp<200s GS V 16V GS VGS 14V V GS 12V VGS 10V Conditions: I 20ADS V 20VGS tp<200s Conditions: I 20ADS tp<200s V GS 14V V 16V GS V 20V GS V 18V GS OnResistance,R (mOhms) DS On Drain-SourceCurrent,I(A) DS Drain-SourceCurrent,I(A) DS OnResistance,R (P.U.) DS On RATIN G AND CHARACTERISTI CS CURVES (RSM36N120T7)
WM1A080120K Version 2.1 Conditions: V 20VDS tp<200s T 150 o C J T 25 o C J T -55 o C J V -5V GS V 0V GS V -2V GS Conditions: T 150 o C J tp<200s Drain-SourceCurrent,I(A) DS GS DS DS DS G a t e S o u r c e V o l t a g e V V Drain-Source Voltage,V (V) Figure7.TransferCharacteristicfor Figure8.BodyDiodeCharacteristicat-55ºC VariousJunctionTemperatures -10 -20 -30 -30 D r a i n S o u r c e V o l t a g e V V -70 Drain-Source Voltage,V (V) Figure9.BodyDiodeCharacteristicat25ºC Figure10.BodyDiodeCharacteristicat150ºC V GS V 5V GS V 10V GS V 15V GS V 20V GS Conditions: T -55 o C J tp<200s J u n c t i o n T e m p e r a t u r e T o C D r a i n S o u r c e V o l t a g e V V J DS Figure11.ThresholdVoltagevs.Temperature Figure12.3rdQuadrantCharacteristicat-55ºC V -5V GS V 0V GS V -2V GS J tp<200s T -55 o C Conditions: V -5V GS V GS V -2V GS Conditions: T 25 o C J tp<200s Conditions: V VGS DS I 5mADS Drain-SourceCurrent,I(A) DS ThresholdVoltage,V(V) th Drain-SourceCurrent,I(A) DS Drain-SourceCurrent,I(A) DS Drain-SourceCurrent,I(A) DS RATIN G AND CHARACTERISTI CS CURVES (RSM36N120T7)
V GS V GS V 10V GS V 15V GS V 20V GS J tp<200s T 25 o C Conditions: Conditions: T 25 o C;V 25mV; f 1MHz J AC C iss C oss C rss Capacitance(pF) Drain-SourceCurrent,I(A) DS DS DS DS DS -10 -10 -20 -20 D r a i n S o u r c e V o l t a g e V V -70 Drain-Source Voltage,V (V) Figure13.3rdQuadrantCharacteristicat25ºC Figure14.3rdQuadrantCharacteristicat150ºC 100000 100000 10000 10000 1000 1000 100 100 10 10 D r a i n S o u r c e V o l t a g e V V D r a i n S o u r c e V o l t a g e V V Figure15.Capacitancesvs.Drain-Source Figure16.Capacitancesvs.Drain-Source Voltage(0 -200V) Voltage(0- 1000V) V 0V GS V 5V GS V 10V GS V 15V GS V 20V GS J tp<200s T 25 o C Conditions: Conditions: T 25 o C; V 25mV;f 1MHz J AC C iss C oss C rss Capacitance(pF) Drain-SourceCurrent,I(A) DS RATIN G AND CHARACTERISTI CS CURVES (RSM36N120T7) = = = =
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