RSF05G1-1P

RSF05G1-1P TOSHIBA | Alldatasheet

Document overview

• Manufacturer or author: Provided By ALLDATASHEET.COM(FREE DATASHEET DOWNLOAD SITE)
• PDF pages: 6

Technical content

RSF05G1−1P,RSF05G1−3P,RSF05G1−5P 2001-07-10 1 TOSHIBA THYRISITOR SILICON PLANAR TYPE RSF05G1−1P,RSF05G1−3P,RSF05G1−5P LOW POWER SWITCHING AND CONTROL APPLICATIONS /G6c/G20Repetitive Peak Off−State Voltage : V DRM = 400V Repetitive Peak Reverse Voltage : V RRM = 400V /G6c/G20Average On−State Current : I T (AV) = 500mA /G6c/G20Plastic Mold Type /G6c/G20Reduce a Quantity of Parts and Manufacturing Process Because of Built-in RGK : R GK = 1kΩ, 2.7kΩ, 5.1kΩ (Typical) MAXIMUM RATINGS CHARACTERISTIC SYMBOL RATING UNIT RSF05G1−1P 400 RSF05G1−3P 400 Repetitive Peak Off−State Voltage and Repetitive Peak Reverse Voltage RSF05G1−5P V DRM VRRM 400 V RSF05G1−1P 500 RSF05G1−3P 500 Non−Repetitive Peak Reverse Voltage (Non−Repetitive< 5ms, Tj = 0~125°C) RSF05G1−5P V DSM 500 V Average On−State Current (Half Sine Waveform) IT(AV) 500 mA R.M.S. On−State Current I T(RMS) 800 mA 9 (50Hz) Peak One Cycle Surge On−State Current (Non−Repetitive) ITSM 10 (60Hz) A I2t Limit Value I 2t 0.4 A 2s Critical Rate of Rise of On−State Current di / dt 10 A / µs Peak Gate Power Dissipation P GM 0.1 W Average Gate Power Dissipation P G(AV) 0.01 W Peak Forward Gate Voltage V FGM 3.5 V Peak Reverse Gate Voltage V RGM −5 V Peak Forward Gate Current I GM 125 mA Junction Temperature T j −40~125 °C Storage Temperature T stg −40~125 °C Note: di / dt Test Condition, i G = 5mA, tgw = 10µs, tgr ≤ 250ns Unit: mm JEDEC TO −92 JEITA SC −43 TOSHIBA 13 −5A1A Weight: 0.2g EQUIVALENT CIRCUIT

RSF05G1−1P,RSF05G1−3P,RSF05G1−5P 2001-07-10 2 ELECTRICAL CHARACTERISTICS (Ta = 25°C) CHARACTERISTIC SYMBOL TEST CONDITION MIN TYP. MAX UNIT Repetitive Peak Off-State Current and Repetitive Peak Reverse Current IDRM IRRM VDRM = VRRM = Rated ― ― 10 µA Peak On−State Voltage V TM I TM = 1A ― ― 1.5 V Gate Trigger Voltage V GT 0.4 ― 0.8 V RSF05G1−1P 400 700 1000 RSF05G1−3P 150 250 400Gate Trigger Current RSF05G1−5P IGT VD = 6V, RL = 100Ω 80 160 250 µA RSF05G1−1P ― ― 6 RSF05G1−3P ― ― 3 Holding Current RSF05G1−5P IH ITM = 1A, VD = 6V ― ― 2 mA RSF05G1−1P 700 1000 1300 RSF05G1−3P 1890 2700 3510Resistor Between Gate and Cathode RSF05G1−5P RGK ― 3570 5100 6630 Ω RSF05G1−1P ― 200 ― RSF05G1−3P ― 70 ― Critical Rate of Rise of Off−State Voltage RSF05G1−5P dv / dt VDRM = Rated Exponential Rise ― 40 ― V / µs Gate Turn−On Time t gt VD = Rated, iG = 5mA ― ― 1.5 µs Junction to Lead R th(j −ℓ) ― ― 40 Thermal Resistance Junction to Ambient R th(j−a) DC ― ― 180 °C / W MARKING Example : It is mark of RSF05G1-1P

RSF05G1−1P,RSF05G1−3P,RSF05G1−5P 2001-07-10 3

RSF05G1−1P,RSF05G1−3P,RSF05G1−5P 2001-07-10 4

RSF05G1−1P,RSF05G1−3P,RSF05G1−5P 2001-07-10 5

RSF05G1−1P,RSF05G1−3P,RSF05G1−5P 2001-07-10 6 /Gb7/G20TOSHIBA is continually working to improve the quality and reliability of its products. Nevertheless, semiconductor devices in general can malfunction or fail due to their inherent electrical sensitivity and vulnerability to physical stress. It is the responsibility of the buyer, when utilizing TOSHIBA products, to comply with the standards of safety in making a safe design for the entire system, and to avoid situations in which a malfunction or failure of such TOSHIBA products could cause loss of human life, bodily injury or damage to property. In developing your designs, please ensure that TOSHIBA products are used within specified operating ranges as set forth in the most recent TOSHIBA products specifications. Also, please keep in mind the precautions and conditions set forth in the “Handling Guide for Semiconductor Devices,” or “TOSHIBA Semiconductor Reliability Handbook” etc.. /Gb7/G20The TOSHIBA products listed in this document are intended for usage in general electronics applications (computer, personal equipment, office equipment, measuring equipment, industrial robotics, domestic appliances, etc.). These TOSHIBA products are neither intended nor warranted for usage in equipment that requires extraordinarily high quality and/or reliability or a malfunction or failure of which may cause loss of human life or bodily injury (“Unintended Usage”). Unintended Usage include atomic energy control instruments, airplane or spaceship instruments, transportation instruments, traffic signal instruments, combustion control instruments, medical instruments, all types of safety devices, etc.. Unintended Usage of TOSHIBA products listed in this document shall be made at the customer’s own risk. /Gb7/G20The information contained herein is presented only as a guide for the applications of our products. No responsibility is assumed by TOSHIBA CORPORATION for any infringements of intellectual property or other rights of the third parties which may result from its use. No license is granted by implication or otherwise under any intellectual property or other rights of TOSHIBA CORPORATION or others. /Gb7/G20The information contained herein is subject to change without notice. 000707EAARESTRICTIONS ON PRODUCT USE