RS801M RECTRON | Alldatasheet
Document overview
- Manufacturer or author: Provided By ALLDATASHEET.COM(FREE DATASHEET DOWNLOAD SITE)
- PDF pages: 2
Technical content
VOLTAGE RANGE 50 to 1000 Volts CURRENT 8.0 Amperes RECTRON SEMICONDUCTOR TECHNICAL SPECIFICATION
FEATURES
- Low leakage * Low forward voltage * Mounting position: Any * Surge overload rating: 200 amperes peak * Ideal for printed circuit boards * High forward surge current capability * UL listed the recognized component directory, file #E94233 * Epoxy: Device has UL flammability classification 94V-O MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS Ratings at 25 o C ambient temperature unless otherwise specified. Single phase, half wave, 60 Hz, resistive or inductive load. For capacitive load, derate current by 20%. RS801M THRU RS807M MAXIMUM RA TINGS (At TA = 25 o C unless otherwise noted) ELECTRICAL CHARACTERISTICS (At TA = 25 o C unless otherwise noted) SINGLE-PHASE SILICON BRIDGE RECTIFIER RS-8M Dimensions in inches and (millimeters) 2001-5 RATINGS Maximum Recurrent Peak Reverse Voltage Maximum RMS Bridge Input Voltage Maximum DC Blocking Voltage Peak Forward Surge Current 8.3 ms single half sine-wave superimposed on rated load Operating and Storage Temperature Range SYMBOL V RRM VDC IO IFSM TJ,TSTG V RMS Volts Volts Amps8.0 200 -55 to + 150 0 C UNITS Maximum Average Forward Rectified Output Current at Tc = 75 o C 50 200 400100 600 800 1000 35 140 28070 420 560 700 50 200 400100 600 800 1000 Volts Amps RS801M RS803M RS804MRS802M RS805M RS806M RS807M DC Blocking Voltage per element CHARACTERISTICS V F SYMBOL IR UNITS 1.1 0.2 mAmps uAmpsMaximum Reverse Current at Rated Maximum Forward Voltage Drop per element at 8.0A DC Volts @T A = 25 o C @T C = 100 o C RS801M RS803M RS804MRS802M RS805M RS806M RS807M .189 (4.8) .173 (4.4) .150 (3.8) .134 (3.4) .114 (2.9) .098 (2.5) .031 (0.8) .023 (0.6) .303 (7.7) .287 (7.3) .043 (1.1) .106 (2.7) 1.169 (29.7) 1.193 (30.3) .096 (2.3) .094 (2.4) .078 (2.0) .035 (0.9) .122 (3.1) .425 (10.8) .441 (11.2) .697 (17.7) .800 (20.3) .669 (17.0) .708 (18.0) .150 (3.8) .165 (4.2) .197 (5) f.134 (3.1) MECHANICAL DATA
RATING AND CHARACTERISTIC CURVES (RS801M THRU RS807M) POWER DISSIPATION AVERAGE RECTIFIED FORWARD CURRENT, Io (A) POWER DISSIPATION PF(W) 0 2 4 6 8 12 14 sine wave Tj=150 per one diode TYPICAL INSTANTANEOUS FORWARD CHARACTERISTICS INSTANTANEOUS FORWARD CURRENT, (A) INSTANTANEOUS FORWARD VOLTAGE, (V) TC = 150 (TYP) TC = 25 (TYP) 0.4 0.6 0.8 1 1.2 0.1 0.2 0.5 pulse test non-repetitive Tj=25 1 cycle 8.3ms 8.3ms IFSM SURGE FORWARD CURRENT CAPABILITY PEAK FORWARD SURGE CURRENT, (A) NUMBER OF CYCLE sine wave 260 200 100 1 2 5 10 20 50 100 TYPICAL FORWARD CURRENT DERATING CURVE AVERAGE FORWARD CURRENT, (A) AMBIENT TEMPERATURE, ( ) on glass-epoxi substrate P.C.B soldering land 5mmf sine wave R-load free in air 0 40 80 120 1600 TYPICAL FORWARD CURRENT DERATING CURVE AVERAGE FORWARD CURRENT, (A) CASE TEMPERATURE, ( ) heatsink Tc Tc sine wave R-load on heatsink 0 25 50 75 100 125 150 175