RS3ABF SEMIPOWER | Alldatasheet

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Technical content

Surface Mount Fast Recovery Rectifiers Reverse Voltage - 50 to 1000 V Forward Current - 3 A

FEATURES

For surface mounted applications Low profile package Glass Passivated Chip Junction Easy to pick and place Fast reverse recovery time Lead free in comply with EU RoHS 2011/65/EU directives MECHANICAL DATA Case: SMBF Terminals: Solderable per MIL-STD-750, Method 2026

  • pprox. Weight: 57mg / 0.002oz A Page 1 of 3 PINNING PIN

DESCRIPTION

Simplified outline SMBF symbol Top View Marking Code: R3AB~R3MB 1 2 RS3ABF THRU RS3MBF Maximum DC Blocking Voltage Peak Forward Surge Current 8.3 ms Single Half Sine Wave Superimposed on Rated Load Maximum Forward Voltage at 3 A Parameter Maximum Repetitive Peak Reverse Voltage Maximum RMS voltage Operating and Storage Temperature Range Maximum Average Forward Rectified Current at T = 125 °Cc Typical Junction Capacitance at V =4V, f=1MHzR VRRM VRMS VDC IF(AV) IFSM VF IR Cj T , Tj stg V V V 100 100 -55 ~ +150 A A V μA ns Symbols Ratings at ambient temperature unless otherwise specified. Single phase, half wave, 60 Hz, resistive or inductive load. For capacitive load, derate current by 20%. 25 °C Absolute Maximum Ratings and Characteristics Maximum Reverse Recovery Time trr pF Units 1.3 Typical Thermal Resistance RθJA RθJC 15 °C/W （1） （2） Maximum DC Reverse Current T = 25 °Ca at Rated DC Blocking Voltage T =125 °Ca 50 100 200 400 600 800 1000 35 70 140 280 420 560 700 50 100 200 400 600 800 1000 150 250 500 RS3ABF RS3BBF RS3DBF RS3GBF RS3JBF RS3KBF RS3MBF （2） （1）Measured with I = 0.5 A, I = 1 A, I = 0.25 AF R rr Copyright@ SEMIPOWER Electronic Technology Co., Ltd. All rights reserved. 2016 Rev 1.0

Fig.3 Typical Instaneous Forward Characteristics Instaneous Forward Current (A) 0.01 0.1 1.0 Instaneous Forward Voltage (V) T =25J °C pulse with 300μs 1% duty cycle Fig.2 Typical Reverse Characteristics 0.1 1.0 100 20 40 60 80 100 12000 140 percent of Rated Peak Voltage (%)Reverse Instaneous Current（ A）Reverse μ T =125J °C T =25J °C Junction Capacitance ( pF) 1.0 10 1000.1 100 Reverse Voltage (V) T =25J °C Fig.4 Typical Junction Capacitance T =25J °C f = 1.0MHz Vsig = 50mVp-p 100 120 10 100 Fig.5 Maximum Non-Repetitive Peak Forward Surage Current Peak A)Forward Surage Current ( Number of Cycles 8.3 ms Single Half Sine Wave (JEDEC Method) 0.5 1.0 1.5 2.0 2.5 4.0 0.0 25 50 75 100 125 150 175 Average Forward Current (A) Case Temperature (°C) Fig.1 Maximum Average Forward Current Rating 3.0 3.5 Single phase half-wave 60 Hz resistive or inductive load RS3ABF THRU RS3MBF Copyright@ SEMIPOWER Electronic Technology Co., Ltd. All rights reserved. 2016 Rev 1.0

The recommended mounting pad size Unit：mm(mil) 3.0(118)1.8(71) 2.54(100) 1.8(71) PACKAGE OUTLINE Plastic surface mounted package; 2 leads SMBF A C ∠ALL ROUND V AM e UNIT mm max min mil max min A C D E HE ∠ 2.2 1.9 e Bottom View HE g Top View 1.0 g g ∠ALL ROUND E D A E pad pad 51 10 173 146 216 43 7 165 138 200 RS3ABF THRU RS3MBF Copyright@ SEMIPOWER Electronic Technology Co., Ltd. All rights reserved. 2016 Rev 1.0