RS3A DSK | Alldatasheet
Document overview
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Technical content
3.1± 0.25 6.9± 0.25 5. 9 ± 0. 25 2. 3 ± 0. 15 1. 3± 0. 25 0.203MAX 7.8± 0. 2 0.25± 0.06
FEATURES
MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS Ratings at 25 o C ambient temperature unless otherwise specified RS3D RS3G RS3J RS3K Maximum recurrent peak reverse voltage V RRM 200 400 600 800 V Maximum RMS voltage V RWS 140 280 420 560 V Maximum DC blocking voltage V DC 200 400 600 800 V Maximum average forword rectified current at c T L =90 O C I F(AV) Peak forward surge current 8.3ms c single half-sine-wave superimposed on rated c load I FSM A Maximum instantaneous forward voltage at 3.0A V F V Maximum DC reverse current @T A =25 o C at rated DC blockjing voltage @T A =125 o C Maximum reverse recovery time (NOTE 1) t rr 250 ns Typical junction capacitance (NOTE 2) C J pF JA Operating junction and storage temperature range T J T STG o C 1000 700 1000 150 100 Low profile package RS3A Polarity: color band denotes cathode end Weight: 0.007 ounces, 0.21 gram High temperature soldering: o C/W RS3B 250oC/10 seconds at terminals 3.0 500 Plastic package has underwriters laborator 111 flammability classification 94V-0 DO - 214AB(SMC) Typical thermal resitance (NOTE 3) copper pad areas RS3M For surface mounted applications UNI TS 50 100 NOTE: 1.Reverse recovery time test conditions:I F =0.5A,I R =1.0A,I rr =0.25A RS3A - - - RS3M 2. M easured at 1.0M Hz and applied reverse voltage of 4.0 Volts REVERSE VOLTAGE: 50 --- 1000 V CURRENT: 3.0 A Built-in strain relief,ideal for automated placement Case:JEDEC DO-214AB,molded plastic over 1111passivated chip SURFACE MOUNT RECTIFIERS Terminals:Solder plated, solderable per MIL-STD-750, Method 2026 50 100 200 1.3 I R Dimensions in millimeters 22R A www.diode.kr Diode Semiconductor Korea
2.0 1.0 Resistive or inductive Load P.C.B.MOUNTED ON COPPERPAND AREAS 3.0 60 70 80 90 100 110 120 130 140 150 160 1 10 100 T L =100 C 8.3ms Single Half Sine-Wave (JEDEC Method) O 100 0.4 0.01 0.1 T J =25 C O Puise Width=300 S 1%DUTY CYCLE 1.8 200 0.1 TJ=25 C 60 80 100 100 TJ=125 C AVERAGE FORWARD CURRENT,AMPERES PEAK FORWARD SURGE CURRENT,AMPERES INSTANTANEOUS FORWAR D CURRENT,AMPERES INSTANTANEOUS REVERS E CURRENT,MICROAMPERES R EVER SE VO LT AG E,VO LT S JUNCTION CAPACITANCE ,pF LEAD TEMPERATURE NUMBER OF CYCLES AT 60Hz INSTANTANEOUS FORWARD VOLTAGE,VOLTS PERCENT OF RATED PEAK REVERSE VOLTAGE, FIG.5-TYPICAL JUNCTION CAPACITANCE RS3A - - - RS3M FIG.3 -- TYPICAL FORWARD CHARACTERISTICS FIG.4 -- TYPICAL REVERSE CHARACTERISTICS FIG.1 -- FORWARD DERATING CURVE FIG.2 PEAK FORWARD SURGE CURRENT TJ=25 f=1MHz .4 1.0 2 100 4 10 20 40 100 www.diode.kr Diode Semiconductor Korea