RS3AF ZSELEC | Alldatasheet
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tings and Electrical Characteristics@T A=25°C unless otherwise specified F S u I d e a l l y S u i t e d f o r A u t o m a t i c A s s e m b l y B u i l t - i n S t r a i n R e l i e f C l a s s i f i c a t i o n R a t i n g 9 4 V - O L o w P o w e r L o s s Weight: 0.037 grams (approx.) ! Low Forward Voltage Drop ! Plastic Case Material has UL Flammability /G01/G01/G01/G01/G01/G01/G01/G01/G01/G01/G01/G01/G01/G01/G01/G01/G01/G01/G01/G01/G01/G01/G01/G01/G01/G01/G01/G01/G01/G01/G01/G01/G01/G01/G01/G01/G01/G01/G01/G01/G01/G01/G01/G01/G01/G01/G01/G01/G01/G01/G01/G01/G01/G01/G01/G01/G01/G01/G01/G01/G01/G01/G01/G01/G01/G01/G01/G01/G01/G01/G01/G01/G01/G01/G01/G01/G01/G01/G01/G01/G01/G01/G01/G01/G01 Mechanical D ata ! Ter minals: Solder Plated, Solderable per MIL-STD-750, Method 2026 ! Polarity: Cathode Band or Cathode Notch ! Marking: Type Number ! Lead Free: For RoHS / Lead Free Version 3.603.20 2.802.40 Dim M in Max A B C D E F G All Di mensions in mm 0.200.10 4.804.40 1.100.90 0.90 - 1.431.38 Case : SMAF, Molded Plastic A B C DF E G 3.0A SURF A CE MOUNT GLASS PASSIVATED FAST RECOVERY DIODE SymbCharacteristi c 150 250 500 nS 1.3 V -65 to +150 °C 35 70 140 280 420 560 700 V 50 100 200 400 600 800 1000 V Peak Repetitive Reverse Voltage Working Peak Reverse Voltage DC Blocking Voltage VRRM VRWM VR RMS Reverse Voltage VR(RM A v erage Rectified Output Current @T L = 100° C I O 3.0 A Non-Repeti tive Peak Forward Surge Current 8.3ms Single half sine-wave superimposed on rated load (JEDEC Method) I FSM 100 A Forward Vo ltage @I F = 3. 0A V FM P e a k R e v e r s e C u r r e n t @ TA = 25° C At Rated DC Blocking Voltage @T A = 100 °C IRM 500 µA Reverse Rec overy Time (Note 1) trr Ty pical Junction Capacitance (Note 2) Cj 15 pF Ty pical Thermal Resistance (Note 3) R/G01JL 30 °C/W Operati ng and Storage Temperature Range Tj, TSTG Note: 1. Measured with IF = 0. 5A, IR = 1.0A, Irr = 0.25A. See figure 5. 2. Measured at 1.0 MHz and applied reverse voltage of 4.0 V DC. Alldatasheet
Z ibo Seno Electronic Engineering Co., Ltd. www.senocn.com RS3AF-RS3MF 0.01 0.1 1.0 0 0.4 0.8 1.2 1.6 I INSTANT ANEOUS FORWARD CURRENT (A) V , INSTANTANEOUS FORWARD VOLTAGE (V) Fig.2 T ypical Forward Characteristics F T = 25°Cj I Pulse Width: 300 sF µ 50V DC Approx
50 NI (Non-inductive)Ω 10
NIΩ 1.0 NI Ω Oscilloscope (Note 1) Pulse Generator (Note 2) Device Under T est trr Set time base for 50/100 ns/cm +0.5A -0.25A -1.0ANotes: 2. Rise Time = 10ns max. Input Impedance = 50 . Ω Ω Fig. 5 Reverse Recovery Time Characteristic and T est Circuit (+) (+) (-) (-) 0.1 1.0 100 1000 0 20 40 60 80 100 120 140 I , INST ANT ANEOUS REVERSE CURRENT (µA R PERCENT OF RATED PEAK REVERSE VOLTAGE (%) Fig.4 T ypical Reverse Characteristics T = 125 Cj ° T = 25°Cj 0.5 1.0 25 50 75 100 125 150 175 I , A VERAGE FORWARD CURRENT (A) (AV) T , TERMINAL TEMPERA TURE (°C) Fig. 1 Forward Current Derating Curve T 1.5 2.0 2.5 3.0 1 10 100 I , PEAK FOR WARD SURGE CURRENT (A FSM NUMBER OF CYCLESA T 60 Hz Fig. 3 Forward Surge Current Derating Curve Single Half-Sine-Wave (JEDEC Method) 100 Alldatasheet