RS3ABF ZSELEC | Alldatasheet

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F I d e a l l y S u i t e d f o r A u t o m a t i c A s s e m b l y B u i l t - i n S t r a i n R e l i e f C l a s s i f i c a t i o n R a t i n g 9 4 V - O L o w P o w e r L o s s Weight: 0.057 grams (approx.) ! Low F orward Voltage Drop ! Plastic Case Material has UL Flammability /G01/G01/G01/G01/G01/G01/G01/G01/G01/G01/G01/G01/G01/G01/G01/G01/G01/G01/G01/G01/G01/G01/G01/G01/G01/G01/G01/G01/G01/G01/G01/G01/G01/G01/G01/G01/G01/G01/G01/G01/G01/G01/G01/G01/G01/G01/G01/G01/G01/G01/G01/G01/G01/G01/G01/G01/G01/G01/G01/G01/G01/G01/G01/G01/G01/G01/G01/G01/G01/G01/G01/G01/G01/G01/G01/G01/G01/G01/G01/G01/G01/G01/G01/G01/G01 Mechanical Da ta ! Ter minals: Solder Plated, Solderable per MIL-STD-750, Method 2026 ! Polarity: Cathode Band or Cathode Notch ! Marking: Type Number ! Lead Free: For RoHS / Lead Free Version 4.404.20 3.703.50 Dim M i n Max A B C D E F G All Dim ensions in mm 0.260.18 5.505.10 1.301.10 1.00 - 2.201.90 Case : SMBF, Molded Plastic A B C DF E G Characteristic 150 250 500 nS 1.3 V -65 t o +150 °C 35 70 140 280 420 560 700 V 50 100 200 400 600 800 1000 V Peak Repet itive Reverse Voltage Working Peak Reverse Voltage DC Blocking Voltage VRRM VRWM VR RMS Revers e Voltage VR(RMS) Av erage Rectified Output Current @T L = 100°C IO 3.0 A Non-Repetit ive Peak Forward Surge Current 8.3ms Single half sine-wave superimposed on rated load (JEDEC Method) I FSM 100 A Forward V oltage @I F = 3.0A V FM P ea k R e v e r s e C u r r e n t @ TA = 25°C A t Rated DC Blocking Voltage @T A = 100° C IRM 500 µA Reverse Reco very Time (Note 1) trr Typi cal Junction Capacitance (Note 2) Cj 15 pF Typi cal Thermal Resistance (Note 3) R/G01JL 30 °C Operating and S torage Temperature Range Tj, TSTG Note: 1. Measured with IF = 0.5A , IR = 1 .0A, Irr = 0. 25A. See figure 5. 2. Measured at 1.0 MHz and applied reverse voltage of 4.0 V DC. bol Sym RS3ABF RS3BBF RS3DBF RS3GBF RS3J BF RS3K BF RS3MBF Un i t 3.0A S URF ACE MOUNT GLASS PASSIVATED FAST RECOVERY DIODE Alldatasheet

Z ibo Seno Electronic Engineering Co., Ltd. www.senocn.com RS3ABF-RS3MBF 0.01 0.1 1.0 0 0.4 0.8 1.2 1.6 I INSTANT ANEOUS FORWARD CURRENT (A) V , INSTANT ANEOUS FORWARD VOLTAGE (V) Fig.2 T ypical Forward Characteristics F T = 25°Cj I Pulse Width: 300 sF µ 50V DC Approx

50 NI (Non-inductive)Ω 10

NIΩ 1.0 NI Ω Oscilloscope (Note 1) Pulse Generator (Note 2) Device Under T est trr Set time base for 50/100 ns/cm +0.5A -0.25A -1.0ANotes: 2. Rise Time = 10ns max. Input Impedance = 50 . Ω Ω Fig. 5 Reverse Recovery Time Characteristic and T est Circuit (+) (+) (-) (-) 0.1 1.0 100 1000 0 20 40 60 80 100 120 140 I , INST ANT ANEOUS REVERSE CURRENT (µA R PERCENT OF RATED PEAK REVERSE VOLTAGE (%)Fig.4 T ypical Reverse Characteristics T = 125 Cj ° T = 25°Cj 0.5 1.0 25 50 75 100 125 150 175 I , AVERAGE FORWARD CURRENT (A) (AV) T , TERMINAL TEMPERA TURE (°C) Fig. 1 Forward Current Derating Curve T 1.5 2.0 2.5 3.0 1 10 100 I , PEAK FOR WARD SURGE CURRENT (A FSM NUMBER OF CYCLESA T 60 Hz Fig. 3 Forward Surge Current Derating Curve Single Half-Sine-Wave (JEDEC Method) 100 Alldatasheet