RS3AB THINKISEMI | Alldatasheet
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3.0 AMPERE GLASS PASSIVATED SURFACE MOUNT FAST RECOVERY RECTIFIERS
© 1995 Thinki Semiconductor Co., Ltd. http://www.thinkisemi.com.tw/ Page 1/2Rev.10T Case:SMB/DO-214AA Package Terminals: Solder plated, solderable per MIL-STD-750, Method 2026 Polarity: Color band denotes cathode band Mounting Position: Any Weight: The plastic package carries Underwriters Laboratory Flammability Classification 94V-0 For surface mounted applications Low reverse leakage Built-in strain relief,ideal for automated placement High forward surge current capability High temperature soldering guaranteed:
250 C/10 seconds at terminals
Glass passivated chip junction 0.11 gram approximately APPLICATION LED SMPS/Industrial power supply HID ballast stabilizer/Audio amplifier Telecommunication SMPS/LED street lamp OUTLINE Unit:inch(millimeter) SMB/DO-214AA Cathode Band 0.155 (3.94) 0.130 (3.30) 0.012 (0.305) 0.006 (0.152) 0.008 (0.2) 0 (0) 0.220 (5.59) 0.205 (5.21) 0.060 (1.52) 0.030 (0.76) 0.096 (2.44) 0.084 (2.13) 0.180 (4.57) 0.160 (4.06) 0.086 (2.20) 0.077 (1.95) Ratings at ambient temperature unless otherwise specified. Single phase, half wave, 60 Hz, resistive or inductive load. For capacitive load, derate current by 20%. 25 °C Absolute Maximum Ratings and Characteristics Maximum DC Blocking Voltage Peak Forward Surge Current 8.3 ms Single Half Sine Wave Superimposed on Rated Load Maximum Forward Voltage at 3 A Parameter Maximum Repetitive Peak Reverse Voltage Maximum RMS voltage Operating and Storage Temperature Range Maximum Average Forward Rectified Current Typical Junction Capacitance at V =4V, f=1MHzR VRRM VRMS VDC IF(AV) IFSM VF IR Cj T , Tj stg V V V 100 -55 ~ +150 A A V μA ns Symbols Maximum Reverse Recovery Time trr pF Units 1.3 Typical Thermal Resistance RθJA RθJC 16 °C/W （1） （2） Maximum DC Reverse Current T = 25 °Ca at Rated DC Blocking Voltage T =125 °Ca 50 100 200 400 600 800 1000 35 70 140 280 420 560 700 50 100 200 400 600 800 1000 150 250 500 RS3MBRS3AB RS3BB RS3DB RS3GB RS3JB RS3KB （2） （1）Measured with I = 0.5 A, I = 1 A, I = 0.25 AF R rr
© 1995 Thinki Semiconductor Co., Ltd. http://www.thinkisemi.com.tw/ Page 2/2Rev.10T RS3AB thru RS3MB Fig.3 Typical Instaneous Forward Characteristics Instaneous Forward Current (A) 0.01 0.1 1.0 Instaneous Forward Voltage (V) T =25J °C pulse with 300μs 1% duty cycle Fig.2 Typical Reverse Characteristics 0.1 1.0 100 20 40 60 80 100 12000 140 percent of Rated Peak Voltage (%)Reverse Instaneous Current（ A）Reverse μ T =125J °C T =25J °C Junction Capacitance ( pF) 1.0 10 1000.1 100 Reverse Voltage (V) T =25J °C Fig.4 Typical Junction Capacitance T =25J °C f = 1.0MHz Vsig = 50mVp-p 100 120 10 100 Fig.5 Maximum Non-Repetitive Peak Forward Surage Current Peak A)Forward Surage Current ( Number of Cycles 8.3 ms Single Half Sine Wave (JEDEC Method) 0.5 1.0 1.5 2.0 2.5 4.0 0.0 25 50 75 100 125 150 175 Average Forward Current (A) Case Temperature (°C) Fig.1 Maximum Average Forward Current Rating 3.0 3.5 Single phase half-wave 60 Hz resistive or inductive load