RS3AB SAMYANG | Alldatasheet
Document overview
- Manufacturer or author: Provided By ALLDATASHEET.COM(FREE DATASHEET DOWNLOAD SITE)
- PDF pages: 2
Technical content
FEATURES
MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS Ratings at 25oC ambient temperature unless otherwise specified R S3D B R S3G B R S3J B R S3K B R A R D SG SJ SK Maximum recurrent peak rev erse v oltage VRRM 200 400 600 800 V Maximum RMS v oltage VRW S 140 280 420 560 V Maximum DC blocking v oltage VDC 200 400 600 800 V Maximum av erage forword rectified current at c TL=90OC I F(AV) Peak forward surge current @ TL = 110°C 8.3ms c single half-sine-wav e superimposed on rated c load IFSM A Maximum instantaneous forward v oltage at 3.0A VF V Maximum DC rev erse current @ TA=25oC at rated DC blockjing v oltage @ TA=125oC Maximum rev erse recov ery time (NOTE 1) trr 250 ns T ypical junction capacitance (NOT E 2) CJ pF Operating junction and storage temperature rangeTJTSTG oC SM 1000 R B 700 100 150 100.0 Low profile package R S3A B Polarity: color band denotes cathode end Weight: 0.003 ounces, 0.093 gram G lass passivated chip junction oC/W R S3B B H igh temperature soldering: 111 250oC/10 seconds at terminals 3.0 500 Plastic package has u nderwriters laborator 111 flammability classification 94V -0 DO - 214A A (SMB) T ypical thermal resitance (NOT E 3) R S3M B For surface mounted applications U N IT S 50 100 NO TE: 1.Reverse recovery time test conditions:IF=0.5A ,IR=1.0A ,Irr=0.25A RS3AB --- RS3MB 2. M easured at 1.0M Hz and applied reverse v oltage of 4.0 V olts REVERSE VOLTAGE: 50 --- 1000 V CURRENT: 3.0 A Built-in strain relief,ideal for automated placement Case:JEDEC DO-214A A ,molded plastic over 1111passivated chip Device m arking code Terminals:Solder plated, solderable per M IL-STD-750, M ethod 2026 50 100 200.0 1.30 5.0 IR www.diode.co.kr A inch(mm) R JA 40.0 SAMYANG ELECTRONICS SAM YANG FAST RECOVERY RECTIFIER All d ata sheet.com
www.diode.co.kr 2.0 1.0 Resistive or inductive Load P.C.B.MOUNTED ON COPPERPAND AREAS 3.0 60 70 80 90 100 110 120 130 140 150 160 1 1 0 1 00 TL=100 C 8.3ms Single Half Sine-Wave (JEDEC Method) O 100 0.4 0.01 0.1 TJ=25 C O Puise Width=300 S 1%DUTY CYCLE 1.8 200 0.1 TJ=25 C 60 80 100 100 TJ=125 C 1 1000.1 100 TJ=25 C f=1.0M HZ Vsig=50m Vp-p AVERAGE FORWARD CURRENT,AMPERES PEAK FORWARD SURGE CURRENT,AMPERES INSTANTANEOUS FORWARD CURRENT,AMPERES INSTANTANEOUS REVERSE CURRENT,MICROAMPERES R EV ER SE VO LT AG E ,VO LT S JUNCTION CAPACITANCE,pF LEA D T EM PER A T U R E N U M BE R O F CYCLES AT 60H z IN ST AN T AN E O U S FO R WA R D V O LT A G E,V O LT SPER CEN T O F R A T ED PEAK R EVER SE VO LT AG E , FIG .5-TY PICA L JUNCTION CA PA CITA NCE RATINGS AND CHARACTERISTIC CURVES RS3AB--- RS3M B FIG .3 -- TY PICA L FORWA RD CHA RA CTERISTICS FIG .4 -- TY PICA L REVERSE CHA RA CTERISTICS FIG.1 -- FORWA RD DERA TING CURVE FIG .2 PEA K FO RWA RD SURGE CURRENT All d ata sheet.com