RS3AB DSK | Alldatasheet
Document overview
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Technical content
2.0± 0.15 4 . 5± 0.1 5 3.5± 0.2 2.3± 0.15 1.25± 0.2 0.203MAX 0.2± 0.05 5 . 3± 0.2
FEATURES
MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS Ratings at 25 o C ambient temperature unless otherwise specified RS3DB RS3GB RS3JB RS3KB Maximum recurrent peak reverse voltage V RRM 200 400 600 800 V Maximum RMS voltage V RWS 140 280 420 560 V Maximum DC blocking voltage V DC 200 400 600 800 V Maximum average forword rectified current at c T L =90 O C I F(AV) Peak forward surge current @ T L = 110°C 8.3ms c single half-sine-wave superimposed on rated c load I FSM A Maximum instantaneous forward voltage at 3.0A V F V Maximum DC reverse current @T A =25 o C at rated DC blockjing voltage @T A =125 o C Maximum reverse recovery time (NOTE 1) t rr 250 ns Typical junction capacitance (NOTE 2) C J pF Operating junction and storage temperature range T J T STG o C 1000 700 100 150 100.0 Low profile package RS3AB Polarity: color band denotes cathode end Weight: 0.003 ounces, 0.093 gram Glass passivated chip junction o C/W RS3BB High temperature soldering: 111 250 o C/10 seconds at terminals 3.0 500 Plastic package has underwriters laborator 111 flammability classification 94V-0 DO - 214AA(SMB) Typical thermal resitance (NOTE 3) copper pad areas RS3MB For surface mounted applications UNI TS 50 100 NOTE: 1.Reverse recovery time test conditions:I F =0.5A,I R =1.0A,I rr =0.25A RS3AB - - - RS3MB 2. M easured at 1.0M Hz and applied reverse voltage of 4.0 Volts REVERSE VOLTAGE: 50 --- 1000 V CURRENT: 3.0 A Built-in strain relief,ideal for automated placement Case:JEDEC DO-214AA,molded plastic over 1111passivated chip SURFACE MOUNT RECTIFIERS Terminals:Solder plated, solderable per MIL-STD-750, Method 2026 50 100 200.0 1.30 5.0 I R A Dimensions in millimeters R JA 40.0 www.diode.kr Diode Semiconductor Korea
2.0 1.0 Resistive or inductive Load P.C.B.MOUNTED ON COPPERPAND AREAS 3.0 60 70 80 90 100 110 120 130 140 150 160 1 1 0 1 00 T L =100 C 8.3ms Single Half Sine-Wave (JEDEC Method) O 100 0.4 0.01 0.1 T J =25 C O Puise Width=300 S 1%DUTY CYCLE 1.8 200 0.1 TJ=25 C 60 80 100 100 TJ=125 C 1 1000 100 T J =25 C f=1.0MHZ Vsig=50mVp-p AVERAGE FORWARD CURRENT,AMPERES PEAK FORWARD SURGE CURRENT,AMPERES INSTANTANEOUS FORWAR D CURRENT,AMPERES INSTANTANEOUS REVERS E CURRENT,MICROAMPERES R EVER SE VO LT AG E,VO LT S JUNCTION CAPACITANCE,PF LEAD TEMPERATURE N U M BER O F CYCLES AT 60H z INSTANTANEOUS FORWARD VOLTAGE,VOLTS PERCENT OF RATED PEAK REVERSE VOLTAGE, FIG.5-TYPICAL JUNCTION CAPACITANCE RS3AB - - - RS3MB FIG.3 -- TYPICAL FORWARD CHARACTERISTICS FIG.4 -- TYPICAL REVERSE CHARACTERISTICS FIG.1 -- FORWARD DERATING CURVE FIG.2 PEAK FORWARD SURGE CURRENT www.diode.kr Diode Semiconductor Korea