RS3501M ZSELEC | Alldatasheet
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/c183Glass Passivated Die Construction /c183High Case Dielectric Strength of 1500VRMS /c183Low Reverse Leakage Current /c183Surge Overload Rating to 350A Peak /c183Ideal for Printed Circuit Board Applications /c183Plastic Material - UL Flammability Classification 94V-0 Single phase, half wave, 60Hz, resistive or inductive load. For capacitive load, derate current by 20%. Maximum Ratings and Electrical Characteristics @ TA = 25/c176C unless otherwise specified 35A GLASS PASSIVATED BRIDGE RECTIFIER /c183Case: Molded Plastic /c183Terminals: Plated Leads, Solderable per MIL-STD-202, Method 208 /c183Polarity: Molded on Body /c183Mounting: Through Hole for #6 Screw /c183Mounting Torque: 5.0 in-lbs Maximum /c183Weight: 6.6 grams (approx.) /c183Marking: Type Number Mechanical Data Characteristic Symbol Unit Peak Repetitive Reverse Voltage Working Peak Reverse Voltage DC Blocking Voltage V RRM VRWM VR 100 200 400 600 800 1000 V RMS Reverse Voltage VR(RMS) 35 70 140 280 420 560 700 V Average Forward Rectified Output Current @ TC= 110/c176C IO 35 A Non-Repetitive Peak Forward Surge Current, 8.3 ms single half-sine-wave superimposed on rated load (JEDEC method) I FSM 350 A Forward Voltage per element @ IF = 17.5A VFM 1.05 V Peak Reverse Current @TC = 25/c176C at Rated DC Blocking Voltage @ TC = 125/c176C IR 500 /c109A I2t Rating for Fusing (t < 8.3ms) (Note 1) I2t 120 A2s Typical Junction Capacitance per Element (Note 2) Cj 55 pF Typical Thermal Resistance, Junction to Case (Note 3) R/c113JC 1.4 °C/W Operating and Storage Temperature Range Tj,T STG -55 to +150 /c176C Notes: 1. Non-repetitive, for t > 1.0ms and < 8.3ms. 2. Measured at 1.0 MHz and applied reverse voltage of 4.0V DC. 3. Thermal resistance from junction to case per element. Unit mounted on 150 x 150 x 1.6mm copper plate heat sink. Z ibo Seno Electronic Engineering Co., Ltd. www.senocn.com 1 of 2 Lead Free:: :For RoHS / Lead Free Version/c183 RS3501M - RS3507M RS RS RS RS RS RS RS A B D JK C E G H L M N P R Dim Min Max A 24.80 25.20 B 14.70 15.30 C 4.00 Nominal D 17.20 17.80 E 0.90 1.10 G 7.30 7.70 H 3.10 /c1983.40 /c198 J 3.30 3.70 K 1.50 1.90 L 9.30 9.70 M 2.50 2.90 N 3.40 3.80 P 4.40 4.80 R 0.60 0.80 All Dimensions in mm RS3501M - RS3507M RS-35M 3501M 3502M 3503M 3504M 3505M 3506M 3507M
0.01 0.1 1.0 V , INSTANTANEOUS FORWARD VOLTAGE (V) Fig.2 T ypical Forward Characteristics (per element) F I , INSTANTANEOUS FORWARD CURRENT (A)F T = 25 CJ ° Pulse width = 300 sµ 100 1 10 100 C , JUNCTION CAPACITANCE (pF) j V , REVERSE VOLTAGE (V) Fig.4 T ypical Junction Capacitance R f = 1MHz T = 25 Cj ° 0.1 1.0 100 1000 04 0 6 0 8 0 100 120 140 I , INST ANTANEOUS REVERSE CURRENT ( R µ PERCENT OF RATED PEAK REVERSE VOLTAGE (%) Fig.5 T ypical Reverse Characteristics T = 150 CJ ° T = 125 CJ ° T = 100 CJ ° T = 25 CJ ° www.senocn.com 2 of 2 Z ibo Seno Electronic Engineering Co., Ltd. RS3501M - RS3507M RS3501M - RS3507M 1 10 100 I , PEAK FORWARD SURGE CURRENT (A) FSM NUMBER OF CYCLES AT 60 Hz Fig. 3 Maximum Non-Repetitive Surge Current T = 25°Cj Single half-sine-wave (JEDEC method) 100 200 300 400 0 25 50 75 100 125 150 I , A VERAGE FORWARD CURRENT (A)F T,CASE TEMPERATURE(°C) Fig.1Forward.CurrentDeratingCurve C Resistive or Inductive load Mounted on a 229 x152 x127 mm ALfinned plate30