RS2AF ZSELEC | Alldatasheet
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atings and Electrical Characteristics@T A=25° C unless otherwise specified r g e O v e r l o a d R a t i n g t o 5 0 A P e a k I d e a l l y S u i t e d f o r A u t o m a t i c A s s e m b l y B u i l t - i n S t r a i n R e l i e f C l a s s i f i c a t i o n R a t i n g 9 4 V - O L o w P o w e r L o s s Weight: 0.037 grams (approx.) ! Low For ward Voltage Drop ! Plastic Case Material has UL Flammability /G01/G01/G01/G01/G01/G01/G01/G01/G01/G01/G01/G01/G01/G01/G01/G01/G01/G01/G01/G01/G01/G01/G01/G01/G01/G01/G01/G01/G01/G01/G01/G01/G01/G01/G01/G01/G01/G01/G01/G01/G01/G01/G01/G01/G01/G01/G01/G01/G01/G01/G01/G01/G01/G01/G01/G01/G01/G01/G01/G01/G01/G01/G01/G01/G01/G01/G01/G01/G01/G01/G01/G01/G01/G01/G01/G01/G01/G01/G01/G01/G01/G01/G01/G01/G01 Mechanic al Data ! Te rminals: Solder Plated, Solderable per MIL-STD-750, Method 2026 ! Polarity: Cathode Band or Cathode Notch ! Marking: Type Number ! Lead Free: For RoHS / Lead Free Version 3.603.20 2.802.40 Dim Min Max A B C D E F G All D imensions in mm 0.200.10 4.804.40 1.100.90 0.90 - 1.431.38 Ca se: SMAF, Molded Plastic A B C DF E G 2.0A S URF ACE MOUNT GLASS PASSIVATED FAST RECOVERY DIODE SymCharacteristic 150 250 500 nS 1.3 V -65 t o +150 °C 35 70 140 280 420 560 700 V 50 100 200 400 600 800 1000 V Peak Repet itive Reverse Voltage Working Peak Reverse Voltage DC Blocking Voltage VRRM VRWM VR RMS Revers e Voltage VR(RMS) Average Rec tified Output Current @T L = 100°C IO 2.0 A Non-Repetit ive Peak Forward Surge Current 8.3ms Single half sine-wave superimposed on rated load (JEDEC Method) I FSM 50 A Forward V oltage @I F = 2.0A V FM P e ak R e v e r s e C u r r e n t @ TA = 25°C A t Rated DC Blocking Voltage @T A = 100°C IRM 500 µA Reverse Reco very Time (Note 1) trr Typi cal Junction Capacitance (Note 2) Cj 15 pF Typi cal Thermal Resistance (Note 3) R/G01JL 30 °C/ W Operating and S torage Temperature Range Tj, TSTG Note: 1. M easured with IF = 0.5A, IR = 1. 0A, Irr = 0. 25A. See figure 5. 2. Measured at 1.0 MHz and applied reverse voltage of 4.0 V DC. Alldatasheet
Z ibo Seno Electronic Engineering Co., Ltd. www.senocn.com RS2AF-RS2MF 0.01 0.1 1.0 0 0.4 0.8 1.2 1.6 I INST ANT ANEOUS FORWARD CURRENT (A) V , INST ANTANEOUS FORWARD VOLTAGE (V) Fig.2 T ypical Forward Characteristics F T = 25°Cj I Pulse Width: 300 sF µ 50V DC Approx 50 NI (Non-inductive)Ω 10 NIΩ 1.0 NI Ω Oscilloscope (Note 1) Pulse Generator (Note 2) Device Under Test trr Set time base for 50/100 ns/cm +0.5A -0.25A -1.0ANotes: 2. Rise Time = 10ns max. Input Impedance = 50 . Ω Ω Fig. 5 Reverse Recovery Time Characteristic and T est Circuit (+) (+) (-) (-) 0.1 1.0 100 1000 0 20 40 60 80 100 120 140 I , INST ANTANEOUS REVERSE CURRENT (µA R PERCENT OF RA TED PEAK REVERSE VOLTAGE (%) Fig.4 T ypical Reverse Characteristics T = 125 Cj ° T = 25°Cj 1 10 100 I , PEAK FORWARD SURGE CURRENT (A FSM NUMBER OF CYCLES AT 60 Hz Fig. 3 Forward Surge Current Derating Curve Single Half-Sine-Wave (JEDEC Method) T = 150°Cj 0.4 0.8 1.2 1.6 2.0 25 50 75 100 125 150 175 200 I , A VERAGE FWD RECTIFIED CURRENT (A)(AV) T , AMBIENT TEMPERATURE ( C) Fig. 1 Forward Derating Curve A ° Single phase half-wave Hz resistive or inductive load Alldatasheet