RS1ABF ZSELEC | Alldatasheet
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ings and Electrical Characteristics @TA=25°C unl ess otherwise specified 1 of 2 Z ibo Seno Electronic Engineering Co., Ltd. www.senocn.com SMB F I d e a l l y S u i t e d f o r A u t o m a t i c A s s e m b l y B u i l t - i n S t r a i n R e l i e f C l a s s i f i c a t i o n R a t i n g 9 4 V - O L o w P o w e r L o s s Weight: 0.057 grams (approx.) ! Low F orward Voltage Drop ! Plastic Case Material has UL Flammability /G01/G01/G01/G01/G01/G01/G01/G01/G01/G01/G01/G01/G01/G01/G01/G01/G01/G01/G01/G01/G01/G01/G01/G01/G01/G01/G01/G01/G01/G01/G01/G01/G01/G01/G01/G01/G01/G01/G01/G01/G01/G01/G01/G01/G01/G01/G01/G01/G01/G01/G01/G01/G01/G01/G01/G01/G01/G01/G01/G01/G01/G01/G01/G01/G01/G01/G01/G01/G01/G01/G01/G01/G01/G01/G01/G01/G01/G01/G01/G01/G01/G01/G01/G01/G01 Mechanical Da ta ! Ter minals: Solder Plated, Solderable per MIL-STD-750, Method 2026 ! Polarity: Cathode Band or Cathode Notch ! Marking: Type Number ! Lead Free: For RoHS / Lead Free Version 4.404.20 3.703.50 Dim M i n Max A B C D E F G All Dim ensions in mm 0.260.18 5.505.10 1.301.10 1.00 - 2.201.90 Case : SMBF, Molded Plastic A B C DF E G RS1ABF-RS1MBF Characteristic 150 250 500 nS 1.3 V -65 to +150 ° C 35 70 140 280 420 560 700 V 50 100 200 400 600 800 1000 V Peak Repet itive Reverse Voltage Working Peak Reverse Voltage DC Blocking Voltage VRRM VRWM VR RMS Revers e Voltage VR(RMS) Average Rec tified Output Current @T L = 100°C IO 1.0 A Non-Repetit ive Peak Forward Surge Current 8.3ms Single half sine-wave superimposed on rated load (JEDEC Method) I FSM 30 A Forward V oltage @I F = 1.0A V FM P e ak R e v e r s e C u r r e n t @ TA = 25°C A t Rated DC Blocking Voltage @T A = 100°C IRM 500 µA Reverse Reco very Time (Note 1) trr Typi cal Junction Capacitance (Note 2) Cj 15 pF Typi cal Thermal Resistance (Note 3) R/G01JL 30 °C/ W Operating and S torage Temperature Range Tj, TSTG Note: 1. M easured with IF = 0.5A, IR = 1. 0A, Irr = 0. 25A. See figure 5. 2. Measured at 1.0 MHz and applied reverse voltage of 4.0 V DC. RS1ABF-RS1MBF 1.0A S URF ACE MOUNT GLASS PASSIVATED FAST RECOVERY DIODE Alldatasheet
Z ibo Seno Electronic Engineering Co., Ltd. www.senocn.com 0.4 1.2 25 50 75 100 125 150 175 I , A VERAGE RECTIFIED CURRENT (A) O T , TERMINAL TEMPERA TURE ( C) Fig. 1 Forward Current Derating Curve T ° 0.2 0.6 0.8 1.0 0.01 0.1 1.0 0 0.4 0.8 1.2 1.6 I INSTANT ANEOUS FORWARD CURRENT (A) V , INST ANTANEOUS FORWARD VOLTAGE (V) Fig.2 T ypical Forward Characteristics F T = 25°Cj I Pulse Width:300 sF µ 1 10 100 I , PEAK FOR WARD SURGE CURRENT (A FSM NUMBER OFCYCLES A T 60Hz Fig. 3 Forward Surge Current Derating Curve Single Half-Sine-Wave (JEDEC Method) T = 150°Cj 50V DC Approx
50 NI (Non-inductive)Ω 10
NIΩ 1.0 NI Ω Oscilloscope (Note 1) Pulse Generator (Note 2) Device Under Test trr Set time basefor 50/100 ns/cm +0.5A -0.25A -1.0ANotes: 2. Rise Time = 10ns max. Input Impedance = 50 . Ω Ω Fig. 5 ReverseRecovery Time Characteristic and Test Circuit (+) (+) (-) (-) 0.1 1.0 100 1000 0 20 40 60 80 100 120 140 I , INST ANT ANEOUS REVERSE CURRENT (µA R PERCENT OF RATED PEAK REVERSE VOLTAGE (%) Fig.4 T ypical Reverse Characteristics T = 125 Cj ° T = 25°Cj Alldatasheet