RS1A SAMYANG | Alldatasheet
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MA XIMUM RA TINGS A ND ELECTRICA L CHA RA CTERISTICS Ratings at 25oC ambient temperature unless otherwise specified RS1D RS1G RS1J RS1K RA RD RG RJ RK M axim um recurrent peak reverse voltage VRRM 200 400 600 800 V M axim um R M S voltage VRWS 140 280 420 560 V M axim um D C blocking voltage VDC 200 400 600 800 V M axim um average forw ord rectified current c @ T L=90OC IF(AV) P eak forward surge current @ TL = 110°C 8.3m s c single half-sine-wave superim posed on rated c load IFSM A M axim um instantaneous forw ard voltage at 1.0A VF V M axim um D C reverse current @TA=25oC at rated D C blocking voltage @TA=125oC M axim um reverse recovery tim e (N OTE 1) trr 250 ns Typical junction capacitance (N OTE 2) CJ pF R JA R JL Operating junction and storage tem perature rangeTJTSTG oC 700 1000 50 100 RS1M RM 1000 50.0 1.30 5.0 105.0 32.0 IR NOTE: 1.Reverse recovery time test conditions:IF=0.5A,IR=1.0A,Irr=0.25A RS1A --- RS1M 2. Measured at 1.0M Hz and applied reverse voltage of 4.0 Volts REVERSE VOLTA GE: 50 --- 1000 V CURRENT: 1 A Built-in strain relief,ideal for automated placement Case:JEDEC DO-214A C,molded plastic over 1111passivated chip Device marking code Terminals:Solder plated, solderable per M IL-STD- 1111750, M ethod 2026 Plastic package has underwriters laborator 111 flammability classification 94V -0 DO - 214AC(SMA) Typical therm al resitance (N OTE 3) For surface mounted applications UNITS 50 100 oC/W RS1B High temperature soldering: 111 250oC/10 seconds at terminals Low profile package RS1A Polarity: color band denotes cathode end Weight: 0.002 ounces, 0.064 gram Glass passivated chip junction 1.0 RB 500150 30.0 www.diode.co.kr inch(mm) 7.0 A A SAMYANG ELECTRONICS SAM YANG FAST RECOVERY RECTIFIER All d ata sheet.com
Lead T emperature ( C ) F ig. 1 — F orward C urrent Derating C urve Average F orward R ectified C urrent (A) F ig. 3 — T ypic al Ins tantaneous F orward C harac teris tic s Ins tantaneous F orward Voltage (V ) Ins tantaneous F orward C urrent (A) P ercent of R ated P eak R evers e V oltage (%) Ins tantaneous R evers e C urrent ( A) F ig. 4 — T ypic al R evers e C harac teris tic s F ig. 6 — T ypic al T rans ient T hermal Impedanc e Number of C ycles at 60 H Z t, P uls e Duration (s ec.) F ig. 2 — Maximum Non-R epetitive P eak F orward S urge C urrent P eak F orward S urge C urrent (A) R evers e V oltage (V ) J unction C apacitance (pF ) Trans ient T hermal Impedance ( C W) F ig. 5 — T ypic al J unc tion C apac itanc e 0 20 40 60 80 100 120 140 160 180 0.5 1.0 1.2 R es is tive or In ductive Load 1 10 100 T L = 90 C 8.3ms S ingle Half S ine-W ave (J E DE C Method) 0.1 P uls e Width = 300 s 1% Duty C ycle 0 20 40 60 80 100 0.01 0.1 1 10 100 T J = 25 C f = 1.0MH Z V s ig = 50mV p-p 0.01 0.1 1 10 100 Mounted on 0.2 x 0.2" (5 x 5mm) C opper P ad Area C opper P ad Areas T J = 25 C T J = 100 C T J = 125 C T J = 125 C T J = 25 C RATINGS AND CHARACTERISTIC CURVES RS1A-RS1M www.diode.co.kr All d ata sheet.com