RS1A_V01 SAMYANG | Alldatasheet
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FEATURES
MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS Ratings at 25oC ambient temperature unless otherwise specified RS1D RS1G RS1J RS1K RA RD RG RJ RK Maximum recurrent peak reverse voltage VRRM 200 400 600 800 V Maximum RMS voltage VRWS 140 280 420 560 V Maximum DC blocking voltage VDC 200 400 600 800 V Maximum average forw ord rectified current c @ T L=90OC IF(AV) Peak forward surge current @ TL = 110°C 8.3ms c single half-sine-wave superimposed on rated c load IFSM A Maximum instantaneous forw ard voltage at 1.0A VF V Maximum DC reverse current @TA=25oC at rated DC blocking voltage @TA=125oC Maximum reverse recovery time (NOTE 1) trr 250 ns Typical junction capacitance (NOTE 2) CJ pF R JA R JL Operating junction and storage temperature range TJTSTG oC 700 1000 50 100 RS1M RM 1000 50.0 1.30 5.0 105.0 32.0 IR NOTE: 1.Reverse recovery time test conditions:IF=0.5A,IR=1.0A,Irr=0.25A RS1A --- RS1M 2. Measured at 1.0MHz and applied reverse voltage of 4.0 Volts REVERSE VOLTAGE: 50 --- 1000 V CURRENT: 1.5 A Built-in strain relief,ideal for automated placement Case:JEDEC DO-214AC,molded plastic over 1111passivated chip Device marking code SURFACE MOUNT RECTIFIER Terminals:Solder plated, solderable per MIL-STD- 1111750, Method 2026 Plastic package has underwriters laborator 111 flammability classification 94V-0 DO - 214AC(SMA) Typical thermal resitance (NOTE 3) For surface mounted applications UNITS 50 100 oC/W RS1B High temperature soldering: 111 250oC/10 seconds at terminals Low profile package RS1A Polarity: color band denotes cathode end Weight: 0.002 ounces, 0.064 gram Glass passivated chip junction 1.0 RB 500150 30.0 www.diode.co.kr inch(mm) 7.0 A A SAMYANG ELECTRONICS SAM YANG All d ata sheet.com
Lead T emperature ( C ) F ig. 1 — F orward C urrent Derating C urve Average F orward R ectified C urrent (A) F ig. 3 — T ypic al Ins tantaneous F orward C harac teris tic s Ins tantaneous F orward Voltage (V ) Ins tantaneous F orward C urrent (A) P ercent of R ated P eak R evers e V oltage (%) Ins tantaneous R evers e C urrent ( A) F ig. 4 — T ypic al R evers e C harac teris tic s F ig. 6 — T ypic al T rans ient T hermal Impedanc e Number of C ycles at 60 H Z t, P uls e Duration (s ec.) F ig. 2 — Maximum Non-R epetitive P eak F orward S urge C urrent P eak F orward S urge C urrent (A) R evers e V oltage (V ) J unction C apacitance (pF ) Trans ient T hermal Impedance ( C W) F ig. 5 — T ypic al J unc tion C apac itanc e 0 20 40 60 80 100 120 140 160 180 0.5 1.0 1.2 R es is tive or In ductive Load 1 10 100 T L = 90 C 8.3ms S ingle Half S ine-W ave (J E DE C Method) 0.1 P uls e Width = 300 s 1% Duty C ycle 0 20 40 60 80 100 0.01 0.1 1 10 100 T J = 25 C f = 1.0MH Z V s ig = 50mV p-p 0.01 0.1 1 10 100 Mounted on 0.2 x 0.2" (5 x 5mm) C opper P ad Area C opper P ad Areas T J = 25 C T J = 100 C T J = 125 C T J = 125 C T J = 25 C RATINGS AND CHARACTERISTIC CURVES RS1A-RS1M www.diode.co.kr All d ata sheet.com