RS1AFH KEXIN | Alldatasheet

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Technical content

www.kexin.com.cn 1 Diodes Fast Recovery diodes RS1AFH ~ RS1MFH ■ Features

  • Low leakage current
  • Excellent stability
  • Guaranteed avalanche energy absorption capability
  • Glass passivated
  • High maximum operating temperature Simplified outline SOD-123FH Weight：17.6mg，0.00062 oz PIN

DESCRIPTION

■ Absolute Maximum Ratings Ta = 25℃ Note.1 Device mounted on Al2O3 printed-circuit board, 0.7 mm thick; thickness of copper ≥ 35 mm. Note.2 Device mounted on epoxy-glass printed-circuit board, 1.5 mm thick; thickness of copper ≥ 40 mm. For more information please refer to the ‘General Part of associated Handbook’. ■ Electrical Characteristics Ta = 25℃ Parameter Symbol Test Conditions Min Typ Max Unit Forward Votalge VF IF=1A 1.3 V VR=VRRMMax 5 ,TJ =125℃ 50 IF = 0.5 A , IR = 1A, 250 IF = 0.5 A,IR=0.25A, 300 Diode Capacitance Cd VR=4V, f=1MHz 7 pF Reverse Recovery Time uA nstrr Maximum DC Reverse Current IR VR=VRRMMax Parameter Symbol RS1A FH RS1B FH RS1D FH RS1G FH RS1J F H RS1K FH RS1M FH Unit Repetitive Peak Reverse Voltage VRRM 50 100 200 400 600 800 1000 Surge Peak Reverse Voltage VRSM 35 70 140 280 420 560 700 Maximum DC Blocking Voltage VR 50 100 200 400 600 800 1000 Averaged Forward Current.TT=110℃ IFAV Peak Forward Surge Current Tj=25℃,VR=VRRMMax IFSM Thermal Resistance From Junction to Ambient (Note.1) (Note.2) Thermal Resistance Junction to Tie-Point Rthj-tp Junction Temperature Tj Storage Temperature Tstg V Rthj-a K/W 150 -50 to 150 A 100 150 RS1A to RS1J RS1K and RS1M

www.kexin.com.cn2 Diodes Fast Recovery diodes RS1AFH ~ RS1MFH ■ Typical Characterisitics handbook, halfpage 002040 1.5 0.5 Ttp (°C) IF(AV) (A) 120 160 Fig.2 Maximum permissible average forward current as a function of tie-point temperature (including losses due to reverse leakage). VR = VRRMmax; δ = 0.5; a = 1.57. handbook, halfpage200 Tj (°C) 00210040

800 VR (V)

Fig.3 Maximum permissible junction temperature as a function of reverse voltage. handbook, halfpage

32 VF (V)

(A) 102 10−1 10−2 10−3 Fig.4 Forward current as a function of forward voltage; typical values. Tj = 25 ° C. handbook, halfpage 1000 20 40 VR (%VRmax) IR (µA) 60 80 102 10−1 10−2 10−3 Tj = 125 °C Tj = 25 °C Fig.5 Reverse current as a function of reverse voltage; typical values.

www.kexin.com.cn 3 Diod es Fast Recovery diodes RS1AFH ~ RS1MFH ■ Typical Characterisitics handbook, halfpage 102 10−2 10−1 1 VR (V) Cd (pF) 10 102 Fig.6 Diode capacitance as a function of reverse voltage; typical values. f = 1 MHz; Tj = 25 °C. handbook, halfpage 102 1 10 Zth j-tp (K/W) 102 103 tp (ms) 104 Fig.7 Transient thermal impedance as a function of pulse width.

www.kexin.com.cn4 Dio des Fast Recovery diodes RS1AFH ~ RS1MFH ■ Typical Application 1.1 (43) 2.0 (79) 1.1 (43) mm (mil)Unit： 1.8 (71) 0.8 (32) 0.8 (32) 1.1 (43) Plastic surface mounted package; 2 leads D E A A HE C ∠A LL RO U N D V AMe UNIT mm max min mil max min 42.5 37.4 6.3 5.5 114 102 150 138 A C D E HE ∠d e E 1.0 0.7 e d bottom pad pad 3.3 3.0 130 118